MT46V128M4P-6T:F

Micron Technology Inc. MT46V128M4P-6T:F

Part Number:
MT46V128M4P-6T:F
Manufacturer:
Micron Technology Inc.
Ventron No:
3239263-MT46V128M4P-6T:F
Description:
IC SDRAM 512MBIT 167MHZ 66TSOP
ECAD Model:
Datasheet:
MT46V128M4,_64M8,_32M16

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Specifications
Micron Technology Inc. MT46V128M4P-6T:F technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT46V128M4P-6T:F.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    66-TSSOP (0.400, 10.16mm Width)
  • Number of Pins
    66
  • Operating Temperature
    0°C~70°C TA
  • Packaging
    Tray
  • Published
    2009
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    66
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    AUTO/SELF REFRESH
  • HTS Code
    8542.32.00.28
  • Technology
    SDRAM - DDR
  • Voltage - Supply
    2.3V~2.7V
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Number of Functions
    1
  • Supply Voltage
    2.5V
  • Terminal Pitch
    0.65mm
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    MT46V128M4
  • Pin Count
    66
  • Operating Supply Voltage
    2.5V
  • Supply Voltage-Max (Vsup)
    2.7V
  • Supply Voltage-Min (Vsup)
    2.3V
  • Memory Size
    512Mb 128M x 4
  • Number of Ports
    1
  • Nominal Supply Current
    175mA
  • Memory Type
    Volatile
  • Clock Frequency
    167MHz
  • Access Time
    700ps
  • Memory Format
    DRAM
  • Memory Interface
    Parallel
  • Data Bus Width
    4b
  • Organization
    128MX4
  • Output Characteristics
    3-STATE
  • Memory Width
    4
  • Write Cycle Time - Word, Page
    15ns
  • Address Bus Width
    15b
  • Density
    512 Mb
  • Standby Current-Max
    0.005A
  • I/O Type
    COMMON
  • Refresh Cycles
    8192
  • Sequential Burst Length
    248
  • Interleaved Burst Length
    248
  • Height Seated (Max)
    1.2mm
  • Length
    22.22mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MT46V128M4P-6T:F Overview
Introducing our latest product, released in 2009, featuring cutting-edge SDRAM - DDR technology. This product boasts a single function and a maximum supply voltage of 2.7V, ensuring efficient and reliable performance. With an organization of 128MX4, this product offers a write cycle time of 15ns for both word and page operations. Its impressive density of 512 Mb allows for ample storage capacity. The I/O type is COMMON, providing ease of use and compatibility. Additionally, this product has a sequential burst length of 248, further enhancing its functionality. It is also worth noting that this product is fully compliant with ROHS3 standards, making it a sustainable and environmentally-friendly choice.

MT46V128M4P-6T:F Features
Package / Case: 66-TSSOP (0.400, 10.16mm Width)
66 Pins
Operating Supply Voltage:2.5V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON


MT46V128M4P-6T:F Applications
There are a lot of Micron Technology Inc.
MT46V128M4P-6T:F Memory applications.


cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
MT46V128M4P-6T:F More Descriptions
IC DDR SDRAM 512MBIT 6NS 66TSOP
IC DRAM 512M PARALLEL 66TSOP
OEMs, CMs ONLY (NO BROKERS)
MICRON TSOP66
Contact for details
MT46V128M4P 6T:F
Product Comparison
The three parts on the right have similar specifications to MT46V128M4P-6T:F.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Operating Supply Voltage
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Number of Ports
    Nominal Supply Current
    Memory Type
    Clock Frequency
    Access Time
    Memory Format
    Memory Interface
    Data Bus Width
    Organization
    Output Characteristics
    Memory Width
    Write Cycle Time - Word, Page
    Address Bus Width
    Density
    Standby Current-Max
    I/O Type
    Refresh Cycles
    Sequential Burst Length
    Interleaved Burst Length
    Height Seated (Max)
    Length
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    JESD-30 Code
    Qualification Status
    Power Supplies
    Operating Mode
    Supply Current-Max
    Memory Density
    Factory Lead Time
    Reach Compliance Code
    Width
    Supplier Device Package
    View Compare
  • MT46V128M4P-6T:F
    MT46V128M4P-6T:F
    Surface Mount
    Surface Mount
    66-TSSOP (0.400, 10.16mm Width)
    66
    0°C~70°C TA
    Tray
    2009
    e3
    Obsolete
    3 (168 Hours)
    66
    EAR99
    Matte Tin (Sn)
    AUTO/SELF REFRESH
    8542.32.00.28
    SDRAM - DDR
    2.3V~2.7V
    DUAL
    260
    1
    2.5V
    0.65mm
    30
    MT46V128M4
    66
    2.5V
    2.7V
    2.3V
    512Mb 128M x 4
    1
    175mA
    Volatile
    167MHz
    700ps
    DRAM
    Parallel
    4b
    128MX4
    3-STATE
    4
    15ns
    15b
    512 Mb
    0.005A
    COMMON
    8192
    248
    248
    1.2mm
    22.22mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT46H16M16LFBF-6 AT:H
    -
    Surface Mount
    60-VFBGA
    -
    -40°C~105°C TA
    Tray
    2008
    -
    Obsolete
    3 (168 Hours)
    60
    EAR99
    -
    AUTO/SELF REFRESH
    8542.32.00.24
    SDRAM - Mobile LPDDR
    1.7V~1.95V
    BOTTOM
    -
    1
    1.8V
    0.8mm
    -
    MT46H16M16
    60
    -
    1.95V
    1.7V
    256Mb 16M x 16
    1
    -
    Volatile
    166MHz
    5ns
    DRAM
    Parallel
    -
    16MX16
    3-STATE
    16
    12ns
    -
    -
    0.00001A
    COMMON
    8192
    24816
    24816
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    R-PBGA-B60
    Not Qualified
    1.8V
    SYNCHRONOUS
    0.085mA
    268435456 bit
    -
    -
    -
    -
  • MT46H64M16LFBF-5 AAT:B
    -
    Surface Mount
    60-VFBGA
    -
    -40°C~105°C TA
    Tray
    2015
    e1
    Obsolete
    -
    60
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    AUTO/SELF REFRESH
    8542.32.00.32
    SDRAM - Mobile LPDDR
    1.7V~1.95V
    BOTTOM
    -
    1
    1.8V
    0.8mm
    -
    -
    60
    -
    1.95V
    1.7V
    1Gb 64M x 16
    1
    -
    Volatile
    200MHz
    5ns
    DRAM
    Parallel
    -
    64MX16
    3-STATE
    16
    15ns
    -
    -
    0.000015A
    COMMON
    8192
    24816
    24816
    1mm
    9mm
    -
    RoHS Compliant
    -
    YES
    R-PBGA-B60
    -
    1.8V
    SYNCHRONOUS
    0.135mA
    1073741824 bit
    4 Weeks
    compliant
    8mm
    -
  • MT46H64M32LFKQ-5 IT:C
    -
    Surface Mount
    -
    -
    -40°C~85°C TA
    Tray
    2015
    -
    Obsolete
    3 (168 Hours)
    168
    -
    -
    AUTO/SELF REFRESH
    -
    SDRAM - Mobile LPDDR
    1.7V~1.95V
    BOTTOM
    -
    1
    1.8V
    0.5mm
    -
    -
    -
    -
    1.95V
    1.7V
    2Gb 64M x 32
    1
    -
    Volatile
    167MHz
    5ns
    DRAM
    Parallel
    -
    64MX32
    -
    32
    15ns
    -
    -
    -
    -
    -
    -
    -
    0.75mm
    12mm
    -
    ROHS3 Compliant
    -
    YES
    S-PBGA-B168
    -
    -
    SYNCHRONOUS
    -
    2147483648 bit
    12 Weeks
    -
    12mm
    168-WFBGA (12x12)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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