Micron Technology Inc. MT46V128M4P-6T:F
- Part Number:
- MT46V128M4P-6T:F
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3239263-MT46V128M4P-6T:F
- Description:
- IC SDRAM 512MBIT 167MHZ 66TSOP
- Datasheet:
- MT46V128M4,_64M8,_32M16
Micron Technology Inc. MT46V128M4P-6T:F technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT46V128M4P-6T:F.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case66-TSSOP (0.400, 10.16mm Width)
- Number of Pins66
- Operating Temperature0°C~70°C TA
- PackagingTray
- Published2009
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations66
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.28
- TechnologySDRAM - DDR
- Voltage - Supply2.3V~2.7V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage2.5V
- Terminal Pitch0.65mm
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMT46V128M4
- Pin Count66
- Operating Supply Voltage2.5V
- Supply Voltage-Max (Vsup)2.7V
- Supply Voltage-Min (Vsup)2.3V
- Memory Size512Mb 128M x 4
- Number of Ports1
- Nominal Supply Current175mA
- Memory TypeVolatile
- Clock Frequency167MHz
- Access Time700ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width4b
- Organization128MX4
- Output Characteristics3-STATE
- Memory Width4
- Write Cycle Time - Word, Page15ns
- Address Bus Width15b
- Density512 Mb
- Standby Current-Max0.005A
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length248
- Interleaved Burst Length248
- Height Seated (Max)1.2mm
- Length22.22mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MT46V128M4P-6T:F Overview
Introducing our latest product, released in 2009, featuring cutting-edge SDRAM - DDR technology. This product boasts a single function and a maximum supply voltage of 2.7V, ensuring efficient and reliable performance. With an organization of 128MX4, this product offers a write cycle time of 15ns for both word and page operations. Its impressive density of 512 Mb allows for ample storage capacity. The I/O type is COMMON, providing ease of use and compatibility. Additionally, this product has a sequential burst length of 248, further enhancing its functionality. It is also worth noting that this product is fully compliant with ROHS3 standards, making it a sustainable and environmentally-friendly choice.
MT46V128M4P-6T:F Features
Package / Case: 66-TSSOP (0.400, 10.16mm Width)
66 Pins
Operating Supply Voltage:2.5V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT46V128M4P-6T:F Applications
There are a lot of Micron Technology Inc.
MT46V128M4P-6T:F Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
Introducing our latest product, released in 2009, featuring cutting-edge SDRAM - DDR technology. This product boasts a single function and a maximum supply voltage of 2.7V, ensuring efficient and reliable performance. With an organization of 128MX4, this product offers a write cycle time of 15ns for both word and page operations. Its impressive density of 512 Mb allows for ample storage capacity. The I/O type is COMMON, providing ease of use and compatibility. Additionally, this product has a sequential burst length of 248, further enhancing its functionality. It is also worth noting that this product is fully compliant with ROHS3 standards, making it a sustainable and environmentally-friendly choice.
MT46V128M4P-6T:F Features
Package / Case: 66-TSSOP (0.400, 10.16mm Width)
66 Pins
Operating Supply Voltage:2.5V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT46V128M4P-6T:F Applications
There are a lot of Micron Technology Inc.
MT46V128M4P-6T:F Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
MT46V128M4P-6T:F More Descriptions
IC DDR SDRAM 512MBIT 6NS 66TSOP
IC DRAM 512M PARALLEL 66TSOP
OEMs, CMs ONLY (NO BROKERS)
MICRON TSOP66
Contact for details
MT46V128M4P 6T:F
IC DRAM 512M PARALLEL 66TSOP
OEMs, CMs ONLY (NO BROKERS)
MICRON TSOP66
Contact for details
MT46V128M4P 6T:F
The three parts on the right have similar specifications to MT46V128M4P-6T:F.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthRadiation HardeningRoHS StatusLead FreeSurface MountJESD-30 CodeQualification StatusPower SuppliesOperating ModeSupply Current-MaxMemory DensityFactory Lead TimeReach Compliance CodeWidthSupplier Device PackageView Compare
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MT46V128M4P-6T:FSurface MountSurface Mount66-TSSOP (0.400, 10.16mm Width)660°C~70°C TATray2009e3Obsolete3 (168 Hours)66EAR99Matte Tin (Sn)AUTO/SELF REFRESH8542.32.00.28SDRAM - DDR2.3V~2.7VDUAL26012.5V0.65mm30MT46V128M4662.5V2.7V2.3V512Mb 128M x 41175mAVolatile167MHz700psDRAMParallel4b128MX43-STATE415ns15b512 Mb0.005ACOMMON81922482481.2mm22.22mmNoROHS3 CompliantLead Free------------
-
-Surface Mount60-VFBGA--40°C~105°C TATray2008-Obsolete3 (168 Hours)60EAR99-AUTO/SELF REFRESH8542.32.00.24SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.8mm-MT46H16M1660-1.95V1.7V256Mb 16M x 161-Volatile166MHz5nsDRAMParallel-16MX163-STATE1612ns--0.00001ACOMMON81922481624816---ROHS3 Compliant-YESR-PBGA-B60Not Qualified1.8VSYNCHRONOUS0.085mA268435456 bit----
-
-Surface Mount60-VFBGA--40°C~105°C TATray2015e1Obsolete-60EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESH8542.32.00.32SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.8mm--60-1.95V1.7V1Gb 64M x 161-Volatile200MHz5nsDRAMParallel-64MX163-STATE1615ns--0.000015ACOMMON819224816248161mm9mm-RoHS Compliant-YESR-PBGA-B60-1.8VSYNCHRONOUS0.135mA1073741824 bit4 Weekscompliant8mm-
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-Surface Mount---40°C~85°C TATray2015-Obsolete3 (168 Hours)168--AUTO/SELF REFRESH-SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.5mm----1.95V1.7V2Gb 64M x 321-Volatile167MHz5nsDRAMParallel-64MX32-3215ns-------0.75mm12mm-ROHS3 Compliant-YESS-PBGA-B168--SYNCHRONOUS-2147483648 bit12 Weeks-12mm168-WFBGA (12x12)
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