Micron Technology Inc. MT46V128M4BN-6:F
- Part Number:
- MT46V128M4BN-6:F
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3239305-MT46V128M4BN-6:F
- Description:
- IC SDRAM 512MBIT 167MHZ 60FBGA
- Datasheet:
- MT46V128M4,_64M8,_32M16
Micron Technology Inc. MT46V128M4BN-6:F technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT46V128M4BN-6:F.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case60-TFBGA
- Number of Pins60
- Operating Temperature0°C~70°C TA
- PackagingTray
- Published2009
- JESD-609 Codee1
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations60
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.28
- TechnologySDRAM - DDR
- Voltage - Supply2.3V~2.7V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage2.5V
- Terminal Pitch1mm
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMT46V128M4
- Pin Count60
- Qualification StatusNot Qualified
- Operating Supply Voltage2.5V
- Supply Voltage-Max (Vsup)2.7V
- Supply Voltage-Min (Vsup)2.3V
- Memory Size512Mb 128M x 4
- Number of Ports1
- Nominal Supply Current175mA
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency167MHz
- Access Time700ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization128MX4
- Output Characteristics3-STATE
- Memory Width4
- Write Cycle Time - Word, Page15ns
- Address Bus Width15b
- Density512 Mb
- Standby Current-Max0.005A
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length248
- Interleaved Burst Length248
- Height Seated (Max)1.2mm
- Length12.5mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MT46V128M4BN-6:F Overview
This product has a total of 60 pins and a Moisture Sensitivity Level (MSL) of 3, which means it can withstand exposure to moisture for up to 168 hours. It also has 60 terminations and an ECCN Code of EAR99. The memory format is DRAM and the memory interface is parallel. The maximum standby current is 0.005A and it has an interleaved burst length of 248. The product has a length of 12.5mm.
MT46V128M4BN-6:F Features
Package / Case: 60-TFBGA
60 Pins
Operating Supply Voltage:2.5V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT46V128M4BN-6:F Applications
There are a lot of Micron Technology Inc.
MT46V128M4BN-6:F Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
This product has a total of 60 pins and a Moisture Sensitivity Level (MSL) of 3, which means it can withstand exposure to moisture for up to 168 hours. It also has 60 terminations and an ECCN Code of EAR99. The memory format is DRAM and the memory interface is parallel. The maximum standby current is 0.005A and it has an interleaved burst length of 248. The product has a length of 12.5mm.
MT46V128M4BN-6:F Features
Package / Case: 60-TFBGA
60 Pins
Operating Supply Voltage:2.5V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT46V128M4BN-6:F Applications
There are a lot of Micron Technology Inc.
MT46V128M4BN-6:F Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
MT46V128M4BN-6:F More Descriptions
128M X 4 Ddr Dram 0.7 Ns PBGA60
IC DRAM 512MBIT PARALLEL 60FBGA
IC DDR SDRAM 512MBIT 6NS 60FBGA
IC DRAM 512MBIT PARALLEL 60FBGA
IC DDR SDRAM 512MBIT 6NS 60FBGA
The three parts on the right have similar specifications to MT46V128M4BN-6:F.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthRoHS StatusLead FreeSurface MountJESD-30 CodePower SuppliesSupply Current-MaxMemory DensityFactory Lead TimeWidthView Compare
-
MT46V128M4BN-6:FSurface MountSurface Mount60-TFBGA600°C~70°C TATray2009e1Obsolete3 (168 Hours)60EAR99TIN SILVER COPPERAUTO/SELF REFRESH8542.32.00.28SDRAM - DDR2.3V~2.7VBOTTOM26012.5V1mmunknown30MT46V128M460Not Qualified2.5V2.7V2.3V512Mb 128M x 41175mAVolatileSYNCHRONOUS167MHz700psDRAMParallel128MX43-STATE415ns15b512 Mb0.005ACOMMON81922482481.2mm12.5mmROHS3 CompliantLead Free--------
-
-Surface Mount152-VFBGA-0°C~70°C TATape & Reel (TR)2004-Obsolete3 (168 Hours)-----SDRAM - Mobile LPDDR1.7V~1.95V-------MT46H32M32-----1Gb 32M x 32--Volatile-166MHz5nsDRAMParallel---15ns---------ROHS3 Compliant--------
-
-Surface Mount60-VFBGA--40°C~105°C TATray2008-Obsolete3 (168 Hours)60EAR99-AUTO/SELF REFRESH8542.32.00.24SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.8mm--MT46H16M1660Not Qualified-1.95V1.7V256Mb 16M x 161-VolatileSYNCHRONOUS166MHz5nsDRAMParallel16MX163-STATE1612ns--0.00001ACOMMON81922481624816--ROHS3 Compliant-YESR-PBGA-B601.8V0.085mA268435456 bit--
-
-Surface Mount60-TFBGA--40°C~85°C TABulk2011e1Last Time Buy3 (168 Hours)60EAR99Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)AUTO/SELF REFRESH8542.32.00.24SDRAM - DDR2.3V~2.7VBOTTOM-12.6V1mm--MT46V16M1660Not Qualified-2.7V2.5V256Mb 16M x 161-VolatileSYNCHRONOUS200MHz700psDRAMParallel16MX163-STATE1615ns--0.004ACOMMON81922482481.2mm12.5mmROHS3 Compliant-YESR-PBGA-B602.6V0.175mA268435456 bit4 Weeks8mm
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