Micron Technology Inc. MT46H32M16LFBF-6 AAT:C TR
- Part Number:
- MT46H32M16LFBF-6 AAT:C TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3234903-MT46H32M16LFBF-6 AAT:C TR
- Description:
- IC SDRAM 512MBIT 167MHZ 60VFBGA
- Datasheet:
- MT46H32M16LFBF-6 AAT:C TR
Micron Technology Inc. MT46H32M16LFBF-6 AAT:C TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT46H32M16LFBF-6 AAT:C TR.
- Factory Lead Time111 Weeks
- Mounting TypeSurface Mount
- Package / Case60-VFBGA
- Operating Temperature-40°C~105°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM - Mobile LPDDR
- Voltage - Supply1.7V~1.95V
- Memory Size512Mb 32M x 16
- Memory TypeVolatile
- Clock Frequency166MHz
- Access Time5ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page15ns
- RoHS StatusROHS3 Compliant
MT46H32M16LFBF-6 AAT:C TR Overview
The operating temperature range for this particular component is quite wide, spanning from -40°C to 105°C. The packaging method used for this component is Tape & Reel (TR), which is commonly used for electronic components to protect them during transportation and storage. The technology used in this component is SDRAM - Mobile LPDDR, which stands for Synchronous Dynamic Random Access Memory - Low Power Double Data Rate. The voltage supply for this component ranges from 1.7V to 1.95V. The memory size is 512Mb, with a configuration of 32M x 16. This component is classified as volatile memory, meaning that it requires a constant power source to retain data. The clock frequency for this component is 166MHz, and the memory format is DRAM, which stands for Dynamic Random Access Memory. The memory interface for this component is parallel, meaning that data is transferred in parallel using multiple data lines. The write cycle time for this component is 15ns, which refers to the time it takes to write a single word or page of data.
MT46H32M16LFBF-6 AAT:C TR Features
Package / Case: 60-VFBGA
MT46H32M16LFBF-6 AAT:C TR Applications
There are a lot of Micron Technology Inc.
MT46H32M16LFBF-6 AAT:C TR Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
The operating temperature range for this particular component is quite wide, spanning from -40°C to 105°C. The packaging method used for this component is Tape & Reel (TR), which is commonly used for electronic components to protect them during transportation and storage. The technology used in this component is SDRAM - Mobile LPDDR, which stands for Synchronous Dynamic Random Access Memory - Low Power Double Data Rate. The voltage supply for this component ranges from 1.7V to 1.95V. The memory size is 512Mb, with a configuration of 32M x 16. This component is classified as volatile memory, meaning that it requires a constant power source to retain data. The clock frequency for this component is 166MHz, and the memory format is DRAM, which stands for Dynamic Random Access Memory. The memory interface for this component is parallel, meaning that data is transferred in parallel using multiple data lines. The write cycle time for this component is 15ns, which refers to the time it takes to write a single word or page of data.
MT46H32M16LFBF-6 AAT:C TR Features
Package / Case: 60-VFBGA
MT46H32M16LFBF-6 AAT:C TR Applications
There are a lot of Micron Technology Inc.
MT46H32M16LFBF-6 AAT:C TR Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
MT46H32M16LFBF-6 AAT:C TR More Descriptions
DRAM Chip Mobile LPDDR SDRAM 512M-Bit 32M x 16 1.8V 60-Pin VFBGA T/R
DRAM MOBILE DDR 512M 32MX16 FBGA
IC DRAM 512MBIT PARALLEL 60VFBGA
DRAM MOBILE DDR 512M 32MX16 FBGA
IC DRAM 512MBIT PARALLEL 60VFBGA
The three parts on the right have similar specifications to MT46H32M16LFBF-6 AAT:C TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusBase Part NumberSurface MountJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchReach Compliance CodePin CountJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Number of PortsOperating ModeSupply Current-MaxOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthLengthHeight Seated (Max)WidthPublishedView Compare
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MT46H32M16LFBF-6 AAT:C TR111 WeeksSurface Mount60-VFBGA-40°C~105°C TATape & Reel (TR)Active3 (168 Hours)SDRAM - Mobile LPDDR1.7V~1.95V512Mb 32M x 16Volatile166MHz5nsDRAMParallel15nsROHS3 Compliant------------------------------------
-
-Surface Mount66-TSSOP (0.400, 10.16mm Width)0°C~70°C TATape & Reel (TR)Obsolete4 (72 Hours)SDRAM - DDR2.3V~2.7V512Mb 128M x 4Volatile133MHz750psDRAMParallel15nsNon-RoHS CompliantMT46V128M4----------------------------------
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4 WeeksSurface Mount60-VFBGA-40°C~105°C TATrayActive-SDRAM - Mobile LPDDR1.7V~1.95V512Mb 32M x 16Volatile166MHz5nsDRAMParallel15nsRoHS Compliant-YESe160EAR99TIN SILVER COPPERAUTO/SELF REFRESH8542.32.00.28BOTTOM11.8V0.8mmcompliant60R-PBGA-B60Not Qualified1.95V1.8V1.7V1SYNCHRONOUS0.105mA32MX163-STATE160.000015A536870912 bitCOMMON819224816248169mm1mm8mm-
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4 WeeksSurface Mount60-VFBGA-40°C~105°C TATrayObsolete-SDRAM - Mobile LPDDR1.7V~1.95V1Gb 64M x 16Volatile200MHz5nsDRAMParallel15nsRoHS Compliant-YESe160EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESH8542.32.00.32BOTTOM11.8V0.8mmcompliant60R-PBGA-B60-1.95V1.8V1.7V1SYNCHRONOUS0.135mA64MX163-STATE160.000015A1073741824 bitCOMMON819224816248169mm1mm8mm2015
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