Micron Technology Inc. MT41K64M16TW-107:J TR
- Part Number:
- MT41K64M16TW-107:J TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3233026-MT41K64M16TW-107:J TR
- Description:
- IC SDRAM 1GBIT 933MHZ 96FBGA
- Datasheet:
- MT41K64M16TW-107:J TR
Micron Technology Inc. MT41K64M16TW-107:J TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT41K64M16TW-107:J TR.
- Factory Lead Time16 Weeks
- Mounting TypeSurface Mount
- Package / Case96-TFBGA
- Operating Temperature0°C~95°C TC
- PackagingTape & Reel (TR)
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM - DDR3L
- Voltage - Supply1.283V~1.45V
- Memory Size1Gb 64M x 16
- Memory TypeVolatile
- Clock Frequency933MHz
- Access Time20ns
- Memory FormatDRAM
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT41K64M16TW-107:J TR Overview
This product features a Surface Mount mounting type and is packaged in Tape & Reel (TR). It was originally published in 2014 and has a Moisture Sensitivity Level (MSL) of 3, meaning it can withstand up to 168 hours of exposure to moisture. The Voltage - Supply for this product is 1.283V~1.45V. It has a Memory Size of 1Gb 64M x 16 and a Clock Frequency of 933MHz. The Access Time for this product is 20ns. It is a DRAM memory format and has a Parallel memory interface.
MT41K64M16TW-107:J TR Features
Package / Case: 96-TFBGA
MT41K64M16TW-107:J TR Applications
There are a lot of Micron Technology Inc.
MT41K64M16TW-107:J TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
This product features a Surface Mount mounting type and is packaged in Tape & Reel (TR). It was originally published in 2014 and has a Moisture Sensitivity Level (MSL) of 3, meaning it can withstand up to 168 hours of exposure to moisture. The Voltage - Supply for this product is 1.283V~1.45V. It has a Memory Size of 1Gb 64M x 16 and a Clock Frequency of 933MHz. The Access Time for this product is 20ns. It is a DRAM memory format and has a Parallel memory interface.
MT41K64M16TW-107:J TR Features
Package / Case: 96-TFBGA
MT41K64M16TW-107:J TR Applications
There are a lot of Micron Technology Inc.
MT41K64M16TW-107:J TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MT41K64M16TW-107:J TR More Descriptions
DRAM Chip DDR3L SDRAM 1G-Bit 64Mx16 1.35V 96-Pin F-BGA T/R
Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT™, Molded Case, Standard Industrial Grade
DDR3L DRAM, 256MX16, CMOS, PBGA96
Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT™, Molded Case, Standard Industrial Grade
DDR3L DRAM, 256MX16, CMOS, PBGA96
The three parts on the right have similar specifications to MT41K64M16TW-107:J TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceRoHS StatusSurface MountNumber of PinsNumber of TerminationsAdditional FeatureTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchBase Part NumberOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Number of PortsOperating ModeOrganizationMemory WidthAddress Bus WidthDensityHeight Seated (Max)LengthLead FreeJESD-609 CodeECCN CodeTerminal FinishHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountSupply Current-MaxData Bus WidthOutput CharacteristicsStandby Current-MaxI/O TypeRefresh CyclesRadiation HardeningSeriesWrite Cycle Time - Word, PageView Compare
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MT41K64M16TW-107:J TR16 WeeksSurface Mount96-TFBGA0°C~95°C TCTape & Reel (TR)2014Active3 (168 Hours)SDRAM - DDR3L1.283V~1.45V1Gb 64M x 16Volatile933MHz20nsDRAMParallelROHS3 Compliant--------------------------------------
-
-Surface Mount78-TFBGA0°C~95°C TCTray2015Obsolete3 (168 Hours)SDRAM - DDR3L1.283V~1.45V8Gb 2G x 4Volatile933MHz20nsDRAMParallelROHS3 CompliantYES7878SELF REFRESHBOTTOM11.35V0.8mmMT41K2G41.35V1.45V1.283V1SYNCHRONOUS2GX4416b8 Gb1.2mm11.5mmLead Free----------------
-
-Surface Mount82-FBGA0°C~95°C TCTray2002Obsolete3 (168 Hours)SDRAM - DDR31.425V~1.575V4Gb 512M x 8Volatile533MHz13.125nsDRAMParallelROHS3 CompliantYES8282AUTO/SELF REFRESHBOTTOM11.5V0.8mmMT41J512M81.5V1.575V1.425V1-512MX8818b4 Gb1.35mm15mm-e1EAR99TIN SILVER COPPER8542.32.00.3626030820.445mA8b3-STATE0.035ACOMMON8192No--
-
-Surface Mount78-TFBGA0°C~95°C TCTray-Active3 (168 Hours)SDRAM - DDR3L1.283V~1.45V8Gb 2G x 4Volatile933MHz20nsDRAMParallelROHS3 Compliant-----------------------------------TwinDie™15ns
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