MT41K64M16TW-107:J TR

Micron Technology Inc. MT41K64M16TW-107:J TR

Part Number:
MT41K64M16TW-107:J TR
Manufacturer:
Micron Technology Inc.
Ventron No:
3233026-MT41K64M16TW-107:J TR
Description:
IC SDRAM 1GBIT 933MHZ 96FBGA
ECAD Model:
Datasheet:
MT41K64M16TW-107:J TR

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Specifications
Micron Technology Inc. MT41K64M16TW-107:J TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT41K64M16TW-107:J TR.
  • Factory Lead Time
    16 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    96-TFBGA
  • Operating Temperature
    0°C~95°C TC
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Technology
    SDRAM - DDR3L
  • Voltage - Supply
    1.283V~1.45V
  • Memory Size
    1Gb 64M x 16
  • Memory Type
    Volatile
  • Clock Frequency
    933MHz
  • Access Time
    20ns
  • Memory Format
    DRAM
  • Memory Interface
    Parallel
  • RoHS Status
    ROHS3 Compliant
Description
MT41K64M16TW-107:J TR Overview
This product features a Surface Mount mounting type and is packaged in Tape & Reel (TR). It was originally published in 2014 and has a Moisture Sensitivity Level (MSL) of 3, meaning it can withstand up to 168 hours of exposure to moisture. The Voltage - Supply for this product is 1.283V~1.45V. It has a Memory Size of 1Gb 64M x 16 and a Clock Frequency of 933MHz. The Access Time for this product is 20ns. It is a DRAM memory format and has a Parallel memory interface.

MT41K64M16TW-107:J TR Features
Package / Case: 96-TFBGA


MT41K64M16TW-107:J TR Applications
There are a lot of Micron Technology Inc.
MT41K64M16TW-107:J TR Memory applications.


eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MT41K64M16TW-107:J TR More Descriptions
DRAM Chip DDR3L SDRAM 1G-Bit 64Mx16 1.35V 96-Pin F-BGA T/R
Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT™, Molded Case, Standard Industrial Grade
DDR3L DRAM, 256MX16, CMOS, PBGA96
Product Comparison
The three parts on the right have similar specifications to MT41K64M16TW-107:J TR.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Voltage - Supply
    Memory Size
    Memory Type
    Clock Frequency
    Access Time
    Memory Format
    Memory Interface
    RoHS Status
    Surface Mount
    Number of Pins
    Number of Terminations
    Additional Feature
    Terminal Position
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Base Part Number
    Operating Supply Voltage
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Number of Ports
    Operating Mode
    Organization
    Memory Width
    Address Bus Width
    Density
    Height Seated (Max)
    Length
    Lead Free
    JESD-609 Code
    ECCN Code
    Terminal Finish
    HTS Code
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Supply Current-Max
    Data Bus Width
    Output Characteristics
    Standby Current-Max
    I/O Type
    Refresh Cycles
    Radiation Hardening
    Series
    Write Cycle Time - Word, Page
    View Compare
  • MT41K64M16TW-107:J TR
    MT41K64M16TW-107:J TR
    16 Weeks
    Surface Mount
    96-TFBGA
    0°C~95°C TC
    Tape & Reel (TR)
    2014
    Active
    3 (168 Hours)
    SDRAM - DDR3L
    1.283V~1.45V
    1Gb 64M x 16
    Volatile
    933MHz
    20ns
    DRAM
    Parallel
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT41K2G4TRF-107:E
    -
    Surface Mount
    78-TFBGA
    0°C~95°C TC
    Tray
    2015
    Obsolete
    3 (168 Hours)
    SDRAM - DDR3L
    1.283V~1.45V
    8Gb 2G x 4
    Volatile
    933MHz
    20ns
    DRAM
    Parallel
    ROHS3 Compliant
    YES
    78
    78
    SELF REFRESH
    BOTTOM
    1
    1.35V
    0.8mm
    MT41K2G4
    1.35V
    1.45V
    1.283V
    1
    SYNCHRONOUS
    2GX4
    4
    16b
    8 Gb
    1.2mm
    11.5mm
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT41J512M8THU-187E:A
    -
    Surface Mount
    82-FBGA
    0°C~95°C TC
    Tray
    2002
    Obsolete
    3 (168 Hours)
    SDRAM - DDR3
    1.425V~1.575V
    4Gb 512M x 8
    Volatile
    533MHz
    13.125ns
    DRAM
    Parallel
    ROHS3 Compliant
    YES
    82
    82
    AUTO/SELF REFRESH
    BOTTOM
    1
    1.5V
    0.8mm
    MT41J512M8
    1.5V
    1.575V
    1.425V
    1
    -
    512MX8
    8
    18b
    4 Gb
    1.35mm
    15mm
    -
    e1
    EAR99
    TIN SILVER COPPER
    8542.32.00.36
    260
    30
    82
    0.445mA
    8b
    3-STATE
    0.035A
    COMMON
    8192
    No
    -
    -
  • MT41K2G4RKB-107:P
    -
    Surface Mount
    78-TFBGA
    0°C~95°C TC
    Tray
    -
    Active
    3 (168 Hours)
    SDRAM - DDR3L
    1.283V~1.45V
    8Gb 2G x 4
    Volatile
    933MHz
    20ns
    DRAM
    Parallel
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TwinDie™
    15ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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