Micron Technology Inc. MT41K512M8RH-125 IT:E TR
- Part Number:
- MT41K512M8RH-125 IT:E TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3244516-MT41K512M8RH-125 IT:E TR
- Description:
- IC SDRAM 4GBIT 800MHZ 78FBGA
Micron Technology Inc. MT41K512M8RH-125 IT:E TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT41K512M8RH-125 IT:E TR.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / Case78-TFBGA
- Surface MountYES
- Operating Temperature-40°C~95°C TC
- PackagingTape & Reel (TR)
- Published2013
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations78
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM - DDR3L
- Voltage - Supply1.283V~1.45V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.35V
- Terminal Pitch0.8mm
- Base Part NumberMT41K512M8
- JESD-30 CodeR-PBGA-B78
- Supply Voltage-Max (Vsup)1.45V
- Supply Voltage-Min (Vsup)1.283V
- Memory Size4Gb 512M x 8
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency800MHz
- Access Time13.75ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization512MX8
- Memory Width8
- Memory Density4294967296 bit
- Length10.5mm
- Height Seated (Max)1.2mm
- Width9mm
- RoHS StatusROHS3 Compliant
MT41K512M8RH-125 IT:E TR Overview
In terms of its memory type, it can be classified as Volatile. The case comes in Tape & Reel (TR) size. The case is embedded in 78-TFBGA. Memory size on the chip is 4Gb 512M x 8. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of -40°C~95°C TC makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 1.283V~1.45V. The recommended mounting type for this device is Surface Mount. On the chip, there are 78 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.35V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 800MHz range. It is common to select similar parts by referring to the device's base part number, MT41K512M8. It also features AUTO/SELF REFRESH to boost system performance despite all its merits. In this chip, there are 1 ports providing read and/or write access to one memory address.
MT41K512M8RH-125 IT:E TR Features
Package / Case: 78-TFBGA
Additional Feature:AUTO/SELF REFRESH
MT41K512M8RH-125 IT:E TR Applications
There are a lot of Micron Technology Inc.
MT41K512M8RH-125 IT:E TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
In terms of its memory type, it can be classified as Volatile. The case comes in Tape & Reel (TR) size. The case is embedded in 78-TFBGA. Memory size on the chip is 4Gb 512M x 8. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of -40°C~95°C TC makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 1.283V~1.45V. The recommended mounting type for this device is Surface Mount. On the chip, there are 78 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.35V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 800MHz range. It is common to select similar parts by referring to the device's base part number, MT41K512M8. It also features AUTO/SELF REFRESH to boost system performance despite all its merits. In this chip, there are 1 ports providing read and/or write access to one memory address.
MT41K512M8RH-125 IT:E TR Features
Package / Case: 78-TFBGA
Additional Feature:AUTO/SELF REFRESH
MT41K512M8RH-125 IT:E TR Applications
There are a lot of Micron Technology Inc.
MT41K512M8RH-125 IT:E TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MT41K512M8RH-125 IT:E TR More Descriptions
IC DDR3 SDRAM 4GBIT 800MHZ FBGA
IC DRAM 4G PARALLEL 78FBGA
MICMT41K512M8RH-125 IT:E TR
INTEGRATED CIRCUIT
IC DRAM 4G PARALLEL 78FBGA
MICMT41K512M8RH-125 IT:E TR
INTEGRATED CIRCUIT
The three parts on the right have similar specifications to MT41K512M8RH-125 IT:E TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchBase Part NumberJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityLengthHeight Seated (Max)WidthRoHS StatusNumber of PinsJESD-609 CodeECCN CodeTerminal FinishHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountOperating Supply VoltageSupply Current-MaxData Bus WidthOutput CharacteristicsAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesRadiation HardeningSeriesWrite Cycle Time - Word, PageView Compare
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MT41K512M8RH-125 IT:E TR10 WeeksSurface Mount78-TFBGAYES-40°C~95°C TCTape & Reel (TR)2013Obsolete3 (168 Hours)78AUTO/SELF REFRESHSDRAM - DDR3L1.283V~1.45VBOTTOM11.35V0.8mmMT41K512M8R-PBGA-B781.45V1.283V4Gb 512M x 81VolatileSYNCHRONOUS800MHz13.75nsDRAMParallel512MX884294967296 bit10.5mm1.2mm9mmROHS3 Compliant---------------------
-
-Surface Mount82-FBGAYES0°C~95°C TCTray2002Obsolete3 (168 Hours)82AUTO/SELF REFRESHSDRAM - DDR31.425V~1.575VBOTTOM11.5V0.8mmMT41J512M8-1.575V1.425V4Gb 512M x 81Volatile-533MHz13.125nsDRAMParallel512MX88-15mm1.35mm-ROHS3 Compliant82e1EAR99TIN SILVER COPPER8542.32.00.3626030821.5V0.445mA8b3-STATE18b4 Gb0.035ACOMMON8192No--
-
-Surface Mount96-TFBGAYES-40°C~125°C TCTray-Active3 (168 Hours)96AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLYSDRAM - DDR3L1.283V~1.45VBOTTOM11.35V0.8mm-R-PBGA-B961.45V1.283V4Gb 256M x 161VolatileSYNCHRONOUS933MHz20nsDRAMParallel256MX16164294967296 bit14mm1.2mm8mmROHS3 Compliant--EAR99-8542.32.00.36NOT SPECIFIEDNOT SPECIFIED-----------Automotive, AEC-Q100-
-
-Surface Mount78-TFBGA-0°C~95°C TCTape & Reel (TR)-Active3 (168 Hours)--SDRAM - DDR3L1.283V~1.45V--------8Gb 2G x 4-Volatile-933MHz20nsDRAMParallel------ROHS3 Compliant------------------TwinDie™15ns
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