Micron Technology Inc. MT41K512M8RH-107:E
- Part Number:
- MT41K512M8RH-107:E
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3244671-MT41K512M8RH-107:E
- Description:
- IC SDRAM 4GBIT 933MHZ 78FBGA
- ECAD Model:
-
Micron Technology Inc. MT41K512M8RH-107:E technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT41K512M8RH-107:E.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case78-TFBGA
- Number of Pins78
- Operating Temperature0°C~95°C TC
- PackagingTray
- Published2013
- JESD-609 Codee1
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations78
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.36
- TechnologySDRAM - DDR3L
- Voltage - Supply1.283V~1.45V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.35V
- Terminal Pitch0.8mm
- Base Part NumberMT41K512M8
- Operating Supply Voltage1.35V
- Supply Voltage-Max (Vsup)1.45V
- Supply Voltage-Min (Vsup)1.283V
- Memory Size4Gb 512M x 8
- Number of Ports1
- Memory TypeVolatile
- Clock Frequency933MHz
- Supply Current-Max0.251mA
- Access Time20ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width8b
- Organization512MX8
- Output Characteristics3-STATE
- Memory Width8
- Address Bus Width19b
- Density4 Gb
- Standby Current-Max0.016A
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length8
- Interleaved Burst Length8
- Height Seated (Max)1.2mm
- Length10.5mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MT41K512M8RH-107:E Overview
The product has a total of 78 terminations and utilizes SDRAM - DDR3L technology. The terminal position is located at the bottom of the product. The maximum supply voltage is 1.45V. It is a volatile memory type in the DRAM format and utilizes a parallel memory interface. The address bus width is 19b and it requires 8192 refresh cycles. The product is not radiation hardened.
MT41K512M8RH-107:E Features
Package / Case: 78-TFBGA
78 Pins
Operating Supply Voltage:1.35V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT41K512M8RH-107:E Applications
There are a lot of Micron Technology Inc.
MT41K512M8RH-107:E Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
The product has a total of 78 terminations and utilizes SDRAM - DDR3L technology. The terminal position is located at the bottom of the product. The maximum supply voltage is 1.45V. It is a volatile memory type in the DRAM format and utilizes a parallel memory interface. The address bus width is 19b and it requires 8192 refresh cycles. The product is not radiation hardened.
MT41K512M8RH-107:E Features
Package / Case: 78-TFBGA
78 Pins
Operating Supply Voltage:1.35V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT41K512M8RH-107:E Applications
There are a lot of Micron Technology Inc.
MT41K512M8RH-107:E Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
MT41K512M8RH-107:E More Descriptions
DRAM Chip DDR3L SDRAM 4G-Bit 512Mx8 1.35V 78-Pin FBGA
DDR3 SDRAM 512MX8 PLASTIC PBF FBGA 1.35V COMMERCIAL
IC DDR3 SDRAM 4GBIT 933MHZ FBGA
Product Description Demo for Development.
DDR3 SDRAM 512MX8 PLASTIC PBF FBGA 1.35V COMMERCIAL
IC DDR3 SDRAM 4GBIT 933MHZ FBGA
Product Description Demo for Development.
The three parts on the right have similar specifications to MT41K512M8RH-107:E.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchBase Part NumberOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthRadiation HardeningRoHS StatusLead FreeSeriesWrite Cycle Time - Word, PageView Compare
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MT41K512M8RH-107:ESurface MountSurface Mount78-TFBGA780°C~95°C TCTray2013e1Obsolete3 (168 Hours)78EAR99Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)AUTO/SELF REFRESH8542.32.00.36SDRAM - DDR3L1.283V~1.45VBOTTOM11.35V0.8mmMT41K512M81.35V1.45V1.283V4Gb 512M x 81Volatile933MHz0.251mA20nsDRAMParallel8b512MX83-STATE819b4 Gb0.016ACOMMON8192881.2mm10.5mmNoROHS3 CompliantLead Free--- -
-Surface Mount78-TFBGA-0°C~95°C TCTray--Active3 (168 Hours)-----SDRAM - DDR3L1.283V~1.45V--------8Gb 2G x 4-Volatile933MHz-20nsDRAMParallel--------------ROHS3 Compliant-TwinDie™15ns
-
-Surface Mount78-TFBGA-0°C~95°C TCTape & Reel (TR)--Active3 (168 Hours)-----SDRAM - DDR3L1.283V~1.45V--------8Gb 2G x 4-Volatile933MHz-20nsDRAMParallel--------------ROHS3 Compliant-TwinDie™15ns
-
-Surface Mount78-TFBGA-0°C~95°C TCTape & Reel (TR)--Active3 (168 Hours)-----SDRAM - DDR3L1.283V~1.45V--------8Gb 1G x 8-Volatile933MHz-20nsDRAMParallel--------------ROHS3 Compliant-TwinDie™15ns
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Surface Mount 78 Pin Memory IC MT41J512M4 2 Gb kb 11.5mm mm 135mA mA
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 14mm mm
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