Micron Technology Inc. MT41K256M8HX-187E:D
- Part Number:
- MT41K256M8HX-187E:D
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3245211-MT41K256M8HX-187E:D
- Description:
- IC SDRAM 2GBIT 533MHZ 78FBGA
- Datasheet:
- MT41K_512M4,256M8,128M16
Micron Technology Inc. MT41K256M8HX-187E:D technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT41K256M8HX-187E:D.
- Mounting TypeSurface Mount
- Package / Case78-TFBGA
- Surface MountYES
- Operating Temperature0°C~95°C TC
- PackagingTray
- Published2011
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations78
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.36
- TechnologySDRAM - DDR3L
- Voltage - Supply1.283V~1.45V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.35V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMT41K256M8
- Pin Count78
- JESD-30 CodeR-PBGA-B78
- Qualification StatusNot Qualified
- Operating Supply Voltage1.35V
- Supply Voltage-Max (Vsup)1.45V
- Supply Voltage-Min (Vsup)1.283V
- Memory Size2Gb 256M x 8
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency533MHz
- Access Time13.125ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization256MX8
- Memory Width8
- Memory Density2147483648 bit
- Height Seated (Max)1.2mm
- Length11.5mm
- Width9mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MT41K256M8HX-187E:D Overview
The product in question was published in 2011 and is currently listed as obsolete. It has a moisture sensitivity level of 3, meaning it can withstand exposure to moisture for up to 168 hours. The technology used is SDRAM - DDR3L, providing efficient and high-performance memory capabilities. The terminal position is located at the bottom for easy installation and usage. This product has not yet been qualified for use, but it has a supply voltage-minimum of 1.283V. It is classified as DRAM and has an organization of 256MX8, with a memory density of 2147483648 bits. Overall, this product offers reliable and advanced memory solutions for various applications.
MT41K256M8HX-187E:D Features
Package / Case: 78-TFBGA
Operating Supply Voltage:1.35V
Additional Feature:AUTO/SELF REFRESH
MT41K256M8HX-187E:D Applications
There are a lot of Micron Technology Inc.
MT41K256M8HX-187E:D Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The product in question was published in 2011 and is currently listed as obsolete. It has a moisture sensitivity level of 3, meaning it can withstand exposure to moisture for up to 168 hours. The technology used is SDRAM - DDR3L, providing efficient and high-performance memory capabilities. The terminal position is located at the bottom for easy installation and usage. This product has not yet been qualified for use, but it has a supply voltage-minimum of 1.283V. It is classified as DRAM and has an organization of 256MX8, with a memory density of 2147483648 bits. Overall, this product offers reliable and advanced memory solutions for various applications.
MT41K256M8HX-187E:D Features
Package / Case: 78-TFBGA
Operating Supply Voltage:1.35V
Additional Feature:AUTO/SELF REFRESH
MT41K256M8HX-187E:D Applications
There are a lot of Micron Technology Inc.
MT41K256M8HX-187E:D Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MT41K256M8HX-187E:D More Descriptions
IC DDR3 SDRAM 2GBIT 533MHZ 78BGA
IC RLDRAM 576MBIT 400MHZ 144UBGA
IC DRAM 2G PARALLEL 78FBGA
IC RLDRAM 576MBIT 400MHZ 144UBGA
IC DRAM 2G PARALLEL 78FBGA
The three parts on the right have similar specifications to MT41K256M8HX-187E:D.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthRoHS StatusLead FreeSeriesWrite Cycle Time - Word, PageView Compare
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MT41K256M8HX-187E:DSurface Mount78-TFBGAYES0°C~95°C TCTray2011e1yesObsolete3 (168 Hours)78EAR99TIN SILVER COPPERAUTO/SELF REFRESH8542.32.00.36SDRAM - DDR3L1.283V~1.45VBOTTOM26011.35V0.8mm30MT41K256M878R-PBGA-B78Not Qualified1.35V1.45V1.283V2Gb 256M x 81VolatileSYNCHRONOUS533MHz13.125nsDRAMParallel256MX882147483648 bit1.2mm11.5mm9mmROHS3 CompliantLead Free---
-
Surface Mount78-TFBGAYES0°C~95°C TCTray-e1-Active1 (Unlimited)78-Tin/Silver/Copper (Sn/Ag/Cu)SELF REFRESH-SDRAM - DDR3L1.283V~1.45VBOTTOM26011.35V0.8mm30--R-PBGA-B78--1.45V1.283V8Gb 1G x 81VolatileSYNCHRONOUS933MHz20nsDRAMParallel1GX888589934592 bit1.2mm10.5mm8mmROHS3 Compliant---
-
Surface Mount78-TFBGA-0°C~95°C TCTape & Reel (TR)---Active3 (168 Hours)-----SDRAM - DDR3L1.283V~1.45V-------------8Gb 2G x 4-Volatile-933MHz20nsDRAMParallel------ROHS3 Compliant-TwinDie™15ns
-
Surface Mount78-TFBGA-0°C~95°C TCTape & Reel (TR)---Active3 (168 Hours)-----SDRAM - DDR3L1.283V~1.45V-------------8Gb 1G x 8-Volatile-933MHz20nsDRAMParallel------ROHS3 Compliant-TwinDie™15ns
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