Micron Technology Inc. MT41J64M16JT-15E AAT:G
- Part Number:
- MT41J64M16JT-15E AAT:G
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3728862-MT41J64M16JT-15E AAT:G
- Description:
- IC SDRAM 1GBIT 667MHZ 96FBGA
- Datasheet:
- MT41J256M4,128M8,64M16
Micron Technology Inc. MT41J64M16JT-15E AAT:G technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT41J64M16JT-15E AAT:G.
- Mounting TypeSurface Mount
- Package / Case96-TFBGA
- Surface MountYES
- Operating Temperature-40°C~105°C TC
- PackagingTray
- Published2014
- JESD-609 Codee1
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations96
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.32
- TechnologySDRAM - DDR3
- Voltage - Supply1.425V~1.575V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.5V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMT41J64M16
- Pin Count96
- JESD-30 CodeR-PBGA-B96
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)1.575V
- Power Supplies1.5V
- Supply Voltage-Min (Vsup)1.425V
- Memory Size1Gb 64M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency667MHz
- Supply Current-Max0.265mA
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization64MX16
- Output Characteristics3-STATE
- Memory Width16
- Standby Current-Max0.012A
- Memory Density1073741824 bit
- Screening LevelAEC-Q100
- Access Time (Max)0.255 ns
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length8
- Interleaved Burst Length8
- Access ModeMULTI BANK PAGE BURST
- Height Seated (Max)1.2mm
- Length14mm
- Width8mm
- RoHS StatusROHS3 Compliant
MT41J64M16JT-15E AAT:G Overview
The Terminal Finish for the Base Part Number MT41J64M16 is a combination of Tin, Silver, and Copper (Sn/Ag/Cu), providing a durable and reliable finish for the memory module. The Supply Voltage-Min (Vsup) for this module is 1.425V, ensuring efficient and stable performance. With 1 port available, this memory type is considered volatile, meaning that its data is lost when power is turned off. The Clock Frequency for this module is 667MHz, allowing for fast data transfer. The Output Characteristics are 3-STATE, meaning that the output can be in three different states: high, low, or high-impedance. The Standby Current-Max is only 0.012A, making it energy-efficient. With an Interleaved Burst Length of 8, this memory module can handle multiple data streams simultaneously. Its Height Seated (Max) is only 1.2mm, making it compact and suitable for various devices.
MT41J64M16JT-15E AAT:G Features
Package / Case: 96-TFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT41J64M16JT-15E AAT:G Applications
There are a lot of Micron Technology Inc.
MT41J64M16JT-15E AAT:G Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
The Terminal Finish for the Base Part Number MT41J64M16 is a combination of Tin, Silver, and Copper (Sn/Ag/Cu), providing a durable and reliable finish for the memory module. The Supply Voltage-Min (Vsup) for this module is 1.425V, ensuring efficient and stable performance. With 1 port available, this memory type is considered volatile, meaning that its data is lost when power is turned off. The Clock Frequency for this module is 667MHz, allowing for fast data transfer. The Output Characteristics are 3-STATE, meaning that the output can be in three different states: high, low, or high-impedance. The Standby Current-Max is only 0.012A, making it energy-efficient. With an Interleaved Burst Length of 8, this memory module can handle multiple data streams simultaneously. Its Height Seated (Max) is only 1.2mm, making it compact and suitable for various devices.
MT41J64M16JT-15E AAT:G Features
Package / Case: 96-TFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT41J64M16JT-15E AAT:G Applications
There are a lot of Micron Technology Inc.
MT41J64M16JT-15E AAT:G Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
MT41J64M16JT-15E AAT:G More Descriptions
DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V Automotive 96-Pin FBGA
EAR99 Surface Mount MT41J64M16 Tray ic memory 667MHz 0.255ns 8mm 0.012A
IC DDR3 SDRAM 1GBIT 667MHZ 96BGA
DDR3 DRAM, 128MX8, CMOS, PBGA78
EAR99 Surface Mount MT41J64M16 Tray ic memory 667MHz 0.255ns 8mm 0.012A
IC DDR3 SDRAM 1GBIT 667MHZ 96BGA
DDR3 DRAM, 128MX8, CMOS, PBGA78
The three parts on the right have similar specifications to MT41J64M16JT-15E AAT:G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxMemory DensityScreening LevelAccess Time (Max)I/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthAccess ModeHeight Seated (Max)LengthWidthRoHS StatusMountNumber of PinsOperating Supply VoltageNominal Supply CurrentAccess TimeAddress Bus WidthDensityRadiation HardeningLead FreeSeriesWrite Cycle Time - Word, PageView Compare
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MT41J64M16JT-15E AAT:GSurface Mount96-TFBGAYES-40°C~105°C TCTray2014e1Obsolete3 (168 Hours)96EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESH8542.32.00.32SDRAM - DDR31.425V~1.575VBOTTOM26011.5V0.8mm30MT41J64M1696R-PBGA-B96Not Qualified1.575V1.5V1.425V1Gb 64M x 161VolatileSYNCHRONOUS667MHz0.265mADRAMParallel64MX163-STATE160.012A1073741824 bitAEC-Q1000.255 nsCOMMON819288MULTI BANK PAGE BURST1.2mm14mm8mmROHS3 Compliant------------
-
Surface Mount78-TFBGA-0°C~95°C TCTray2012-Obsolete3 (168 Hours)78EAR99-AUTO/SELF REFRESH8542.32.00.36SDRAM - DDR31.425V~1.575VBOTTOM-11.5V0.8mm-MT41J512M478--1.575V-1.425V2Gb 512M x 41Volatile-533MHz-DRAMParallel512MX43-STATE40.012A---COMMON819288-1.2mm11.5mm-ROHS3 CompliantSurface Mount781.5V135mA13.125ns18b2 GbNoLead Free--
-
Surface Mount78-TFBGAYES0°C~95°C TCTray2015-Obsolete3 (168 Hours)78--SELF REFRESH-SDRAM - DDR3L1.283V~1.45VBOTTOM-11.35V0.8mm-MT41K2G4---1.45V-1.283V8Gb 2G x 41VolatileSYNCHRONOUS933MHz-DRAMParallel2GX4-4---------1.2mm11.5mm-ROHS3 Compliant-781.35V-20ns16b8 Gb-Lead Free--
-
Surface Mount78-TFBGA-0°C~95°C TCTray--Active3 (168 Hours)-----SDRAM - DDR3L1.283V~1.45V-------------8Gb 2G x 4-Volatile-933MHz-DRAMParallel---------------ROHS3 Compliant----20ns----TwinDie™15ns
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