Micron Technology Inc. MT41J128M16JT-093G:K
- Part Number:
- MT41J128M16JT-093G:K
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3234203-MT41J128M16JT-093G:K
- Description:
- IC SDRAM 2GBIT 1067MHZ 96BGA
- Datasheet:
- MT41J256M4,128M8,64M16
Micron Technology Inc. MT41J128M16JT-093G:K technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT41J128M16JT-093G:K.
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case96-TFBGA
- Number of Pins96
- Operating Temperature0°C~95°C TC
- PackagingTray
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations96
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM - DDR3
- Voltage - Supply1.425V~1.575V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.5V
- Terminal Pitch0.8mm
- Base Part NumberMT41J128M16
- Operating Supply Voltage1.5V
- Supply Voltage-Max (Vsup)1.575V
- Supply Voltage-Min (Vsup)1.425V
- Memory Size2Gb 128M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency1066MHz
- Access Time20ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width16b
- Organization128MX16
- Memory Width16
- Address Bus Width14b
- Density2 Gb
- Height Seated (Max)1.2mm
- Length14mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MT41J128M16JT-093G:K Overview
The package or case for this obsolete part is a 96-TFBGA, which stands for thin fine ball grid array. The contact plating for this component is available in three options: copper, silver, and tin. The technology used in this part is SDRAM - DDR3, which is a type of synchronous dynamic random-access memory. The terminal pitch, or the distance between each terminal, is 0.8mm. This part operates in synchronous mode, meaning that data is transferred in sync with a clock signal. The access time for this memory is 20ns, which refers to the amount of time it takes for data to be accessed. The memory format is DRAM, or dynamic random-access memory, and it has a memory width of 16 bits. Additionally, this part is ROHS3 compliant, meaning it meets the requirements for the Restriction of Hazardous Substances directive.
MT41J128M16JT-093G:K Features
Package / Case: 96-TFBGA
96 Pins
Operating Supply Voltage:1.5V
Additional Feature:AUTO/SELF REFRESH
MT41J128M16JT-093G:K Applications
There are a lot of Micron Technology Inc.
MT41J128M16JT-093G:K Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
The package or case for this obsolete part is a 96-TFBGA, which stands for thin fine ball grid array. The contact plating for this component is available in three options: copper, silver, and tin. The technology used in this part is SDRAM - DDR3, which is a type of synchronous dynamic random-access memory. The terminal pitch, or the distance between each terminal, is 0.8mm. This part operates in synchronous mode, meaning that data is transferred in sync with a clock signal. The access time for this memory is 20ns, which refers to the amount of time it takes for data to be accessed. The memory format is DRAM, or dynamic random-access memory, and it has a memory width of 16 bits. Additionally, this part is ROHS3 compliant, meaning it meets the requirements for the Restriction of Hazardous Substances directive.
MT41J128M16JT-093G:K Features
Package / Case: 96-TFBGA
96 Pins
Operating Supply Voltage:1.5V
Additional Feature:AUTO/SELF REFRESH
MT41J128M16JT-093G:K Applications
There are a lot of Micron Technology Inc.
MT41J128M16JT-093G:K Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
MT41J128M16JT-093G:K More Descriptions
DRAM Chip GDDR3 SDRAM 2G-Bit 128Mx16 1.5V 96-Pin F-BGA
Obsolete Copper Silver Tin 2016 BOTTOM ic memory 0C~95C TC 1.425V 2Gb 14mm
DRAM, DDR3 SDRAM, 2Gb, x16, 1.5V, 96-ball FBGA, RoHSMicron SCT
DDR3 SDRAM 128MX16 PLASTIC PBF FBGA 1.5V
Obsolete Copper Silver Tin 2016 BOTTOM ic memory 0C~95C TC 1.425V 2Gb 14mm
DRAM, DDR3 SDRAM, 2Gb, x16, 1.5V, 96-ball FBGA, RoHSMicron SCT
DDR3 SDRAM 128MX16 PLASTIC PBF FBGA 1.5V
The three parts on the right have similar specifications to MT41J128M16JT-093G:K.
-
ImagePart NumberManufacturerContact PlatingMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchBase Part NumberOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationMemory WidthAddress Bus WidthDensityHeight Seated (Max)LengthRoHS StatusLead FreeSurface MountSeriesECCN CodeHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeMemory DensityWidthWrite Cycle Time - Word, PageView Compare
-
MT41J128M16JT-093G:KCopper, Silver, TinSurface MountSurface Mount96-TFBGA960°C~95°C TCTray2016Obsolete3 (168 Hours)96AUTO/SELF REFRESHSDRAM - DDR31.425V~1.575VBOTTOM11.5V0.8mmMT41J128M161.5V1.575V1.425V2Gb 128M x 161VolatileSYNCHRONOUS1066MHz20nsDRAMParallel16b128MX161614b2 Gb1.2mm14mmROHS3 CompliantLead Free-----------
-
--Surface Mount96-TFBGA--40°C~125°C TCTray-Active3 (168 Hours)96AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLYSDRAM - DDR3L1.283V~1.45VBOTTOM11.35V0.8mm--1.45V1.283V4Gb 256M x 161VolatileSYNCHRONOUS933MHz20nsDRAMParallel-256MX1616--1.2mm14mmROHS3 Compliant-YESAutomotive, AEC-Q100EAR998542.32.00.36NOT SPECIFIEDNOT SPECIFIEDR-PBGA-B964294967296 bit8mm-
-
--Surface Mount78-TFBGA-0°C~95°C TCTray-Active3 (168 Hours)--SDRAM - DDR3L1.283V~1.45V--------8Gb 2G x 4-Volatile-933MHz20nsDRAMParallel-------ROHS3 Compliant--TwinDie™-------15ns
-
--Surface Mount78-TFBGA-0°C~95°C TCTape & Reel (TR)-Active3 (168 Hours)--SDRAM - DDR3L1.283V~1.45V--------8Gb 2G x 4-Volatile-933MHz20nsDRAMParallel-------ROHS3 Compliant--TwinDie™-------15ns
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