Micron Technology Inc. MT29RZ2B1DZZHGWD-18I.83G TR
- Part Number:
- MT29RZ2B1DZZHGWD-18I.83G TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3233648-MT29RZ2B1DZZHGWD-18I.83G TR
- Description:
- MASSFLASH/LPDDR2 3G
- ECAD Model:
-
- Datasheet:
- MT29RZ2B1DZZHGWD-18I.83G TR
Micron Technology Inc. MT29RZ2B1DZZHGWD-18I.83G TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29RZ2B1DZZHGWD-18I.83G TR.
- Mounting TypeSurface Mount
- Package / Case162-VFBGA
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND, DRAM - LPDDR2
- Voltage - Supply1.8V
- Memory Size2Gb 256M x 8 N 1G 32M x 32 LPDDR2
- Memory TypeNon-Volatile
- Clock Frequency533MHz
- Memory FormatFLASH, RAM
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29RZ2B1DZZHGWD-18I.83G TR Overview
The mounting type for this electronic component is surface mount, making it easy to install and secure onto a circuit board. The package or case for this component is a 162-VFBGA, providing a compact and efficient design. It is packaged in tape and reel (TR), which allows for easy storage and transportation. However, it should be noted that this part is now considered obsolete, meaning it is no longer in production. The technology used in this component includes FLASH-NAND and DRAM-LPDDR2, providing high-speed data storage and retrieval. It operates at a voltage supply of 1.8V, making it energy-efficient. This memory type is non-volatile, allowing data to be retained even when power is turned off. The memory format includes both FLASH and RAM, providing a versatile storage solution. Its memory interface is parallel, allowing for efficient data transfer. Additionally, this component is ROHS3 compliant, ensuring it meets strict environmental standards.
MT29RZ2B1DZZHGWD-18I.83G TR Features
Package / Case: 162-VFBGA
MT29RZ2B1DZZHGWD-18I.83G TR Applications
There are a lot of Micron Technology Inc.
MT29RZ2B1DZZHGWD-18I.83G TR Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
The mounting type for this electronic component is surface mount, making it easy to install and secure onto a circuit board. The package or case for this component is a 162-VFBGA, providing a compact and efficient design. It is packaged in tape and reel (TR), which allows for easy storage and transportation. However, it should be noted that this part is now considered obsolete, meaning it is no longer in production. The technology used in this component includes FLASH-NAND and DRAM-LPDDR2, providing high-speed data storage and retrieval. It operates at a voltage supply of 1.8V, making it energy-efficient. This memory type is non-volatile, allowing data to be retained even when power is turned off. The memory format includes both FLASH and RAM, providing a versatile storage solution. Its memory interface is parallel, allowing for efficient data transfer. Additionally, this component is ROHS3 compliant, ensuring it meets strict environmental standards.
MT29RZ2B1DZZHGWD-18I.83G TR Features
Package / Case: 162-VFBGA
MT29RZ2B1DZZHGWD-18I.83G TR Applications
There are a lot of Micron Technology Inc.
MT29RZ2B1DZZHGWD-18I.83G TR Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
MT29RZ2B1DZZHGWD-18I.83G TR More Descriptions
ON SEMICONDUCTOR - 2N6035G - DARLINGTON TRANSISTOR, PNP, -60V, TO-225
IC FLASH RAM 2G PARALLEL 533MHZ
IC FLASH RAM 2G PARALLEL 533MHZ
The three parts on the right have similar specifications to MT29RZ2B1DZZHGWD-18I.83G TR.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusSeriesFactory Lead TimeSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29RZ2B1DZZHGWD-18I.83G TRSurface Mount162-VFBGA-40°C~85°C TATape & Reel (TR)Obsolete3 (168 Hours)FLASH - NAND, DRAM - LPDDR21.8V2Gb 256M x 8 N 1G 32M x 32 LPDDR2Non-Volatile533MHzFLASH, RAMParallelROHS3 Compliant----------------------- -
Surface Mount162-VFBGA-40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallelROHS3 CompliantAutomotive, AEC-Q100---------------------
-
Surface Mount130-VFBGA-40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-Volatile200MHzFLASH, RAMParallelRoHS Compliant-16 WeeksYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
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Surface Mount162-VFBGA-40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel-----------------------
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
-
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