Micron Technology Inc. MT29F768G08EEHBBJ4-3RES:B TR
- Part Number:
- MT29F768G08EEHBBJ4-3RES:B TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3236737-MT29F768G08EEHBBJ4-3RES:B TR
- Description:
- IC FLASH 768GBIT 333MHZ 132VBGA
- Datasheet:
- MT29F768G08EEHBBJ4-3RES:B TR
Micron Technology Inc. MT29F768G08EEHBBJ4-3RES:B TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F768G08EEHBBJ4-3RES:B TR.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / Case132-VBGA
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply2.5V~3.6V
- Memory Size768Gb 96G x 8
- Memory TypeNon-Volatile
- Clock Frequency333MHz
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F768G08EEHBBJ4-3RES:B TR Overview
The product features a Surface Mount mounting type, with a 132-VBGA package/case. It has an operating temperature range of 0°C to 70°C TA and is packaged in Tape & Reel (TR) format. This product is currently active and available for purchase. With a memory size of 768Gb (96G x 8), it is a high-capacity option for non-volatile memory needs. The clock frequency is 333MHz, ensuring efficient and reliable performance. The memory format is FLASH, providing fast data access and storage capabilities. Additionally, this product is compliant with the latest ROHS3 standards for environmentally-friendly manufacturing.
MT29F768G08EEHBBJ4-3RES:B TR Features
Package / Case: 132-VBGA
MT29F768G08EEHBBJ4-3RES:B TR Applications
There are a lot of Micron Technology Inc.
MT29F768G08EEHBBJ4-3RES:B TR Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
The product features a Surface Mount mounting type, with a 132-VBGA package/case. It has an operating temperature range of 0°C to 70°C TA and is packaged in Tape & Reel (TR) format. This product is currently active and available for purchase. With a memory size of 768Gb (96G x 8), it is a high-capacity option for non-volatile memory needs. The clock frequency is 333MHz, ensuring efficient and reliable performance. The memory format is FLASH, providing fast data access and storage capabilities. Additionally, this product is compliant with the latest ROHS3 standards for environmentally-friendly manufacturing.
MT29F768G08EEHBBJ4-3RES:B TR Features
Package / Case: 132-VBGA
MT29F768G08EEHBBJ4-3RES:B TR Applications
There are a lot of Micron Technology Inc.
MT29F768G08EEHBBJ4-3RES:B TR Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
MT29F768G08EEHBBJ4-3RES:B TR More Descriptions
IC SDRAM 1GBIT 933MHZ 78FBGA
IC FLASH 768GBIT PAR 132VBGA
IC FLASH 768G PARALLEL 333MHZ
IC FLASH 768GBIT PAR 132VBGA
IC FLASH 768G PARALLEL 333MHZ
The three parts on the right have similar specifications to MT29F768G08EEHBBJ4-3RES:B TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusSeriesSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F768G08EEHBBJ4-3RES:B TR12 WeeksSurface Mount132-VBGA0°C~70°C TATape & Reel (TR)Active3 (168 Hours)FLASH - NAND2.5V~3.6V768Gb 96G x 8Non-Volatile333MHzFLASHParallelROHS3 Compliant----------------------
-
-Surface Mount162-VFBGA-40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallelROHS3 CompliantAutomotive, AEC-Q100--------------------
-
16 WeeksSurface Mount130-VFBGA-40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-Volatile200MHzFLASH, RAMParallelRoHS Compliant-YES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
-Surface Mount162-VFBGA-40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel----------------------
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