Micron Technology Inc. MT29F6T08ETHBBM5-3RES:B TR
- Part Number:
- MT29F6T08ETHBBM5-3RES:B TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3237234-MT29F6T08ETHBBM5-3RES:B TR
- Description:
- IC FLASH 6TBIT 333MHZ LBGA
- Datasheet:
- MT29F6T08ETHBBM5-3RES:B TR
Micron Technology Inc. MT29F6T08ETHBBM5-3RES:B TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F6T08ETHBBM5-3RES:B TR.
- Factory Lead Time12 Weeks
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply2.5V~3.6V
- Memory Size6Tb 768G x 8
- Memory TypeNon-Volatile
- Clock Frequency333MHz
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F6T08ETHBBM5-3RES:B TR Overview
In this case, the memory type of the device can be classified as Non-Volatile. Case Tape & Reel (TR) is available. It is estimated that the memory size on the chip is 6Tb 768G x 8. As with most mainstream devices, this one uses FLASH-format memory. Due to its wide temperature range of 0°C~70°C TA, this device is well suited to a wide range of applications that require high performance. With 2.5V~3.6V as the supply voltage, it is capable of handling memory ics. In order to operate effectively, the memory rotates at a clock frequency within a range of 333MHz.
MT29F6T08ETHBBM5-3RES:B TR Features
The operating temperature range for this particular electronic component is between 0°C and 70°C, making it suitable for a variety of environments and applications. Its part status is currently active, indicating that it is readily available for purchase. With a moisture sensitivity level of 3, this component can withstand exposure to moisture for up to 168 hours. It utilizes FLASH - NAND technology and requires a supply voltage of 2.5V to 3.6V. The memory size is an impressive 6Tb, with 768G x 8 memory cells. It operates at a clock frequency of 333MHz and has a FLASH memory format. The memory interface is parallel, allowing for efficient data transfer. Additionally, this component is compliant with the latest RoHS regulations, ensuring its environmental friendliness.
MT29F6T08ETHBBM5-3RES:B TR Applications
There are a lot of Micron Technology Inc.
MT29F6T08ETHBBM5-3RES:B TR Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
In this case, the memory type of the device can be classified as Non-Volatile. Case Tape & Reel (TR) is available. It is estimated that the memory size on the chip is 6Tb 768G x 8. As with most mainstream devices, this one uses FLASH-format memory. Due to its wide temperature range of 0°C~70°C TA, this device is well suited to a wide range of applications that require high performance. With 2.5V~3.6V as the supply voltage, it is capable of handling memory ics. In order to operate effectively, the memory rotates at a clock frequency within a range of 333MHz.
MT29F6T08ETHBBM5-3RES:B TR Features
The operating temperature range for this particular electronic component is between 0°C and 70°C, making it suitable for a variety of environments and applications. Its part status is currently active, indicating that it is readily available for purchase. With a moisture sensitivity level of 3, this component can withstand exposure to moisture for up to 168 hours. It utilizes FLASH - NAND technology and requires a supply voltage of 2.5V to 3.6V. The memory size is an impressive 6Tb, with 768G x 8 memory cells. It operates at a clock frequency of 333MHz and has a FLASH memory format. The memory interface is parallel, allowing for efficient data transfer. Additionally, this component is compliant with the latest RoHS regulations, ensuring its environmental friendliness.
MT29F6T08ETHBBM5-3RES:B TR Applications
There are a lot of Micron Technology Inc.
MT29F6T08ETHBBM5-3RES:B TR Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
MT29F6T08ETHBBM5-3RES:B TR More Descriptions
IC FLASH 6TBIT PARALLEL 333MHZ
IC FLASH 4M PARALLEL 32PLCC
IC FLASH 4M PARALLEL 32PLCC
The three parts on the right have similar specifications to MT29F6T08ETHBBM5-3RES:B TR.
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ImagePart NumberManufacturerFactory Lead TimeOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusMounting TypePackage / CaseSeriesSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F6T08ETHBBM5-3RES:B TR12 Weeks0°C~70°C TATape & Reel (TR)Active3 (168 Hours)FLASH - NAND2.5V~3.6V6Tb 768G x 8Non-Volatile333MHzFLASHParallelROHS3 Compliant------------------------
-
--40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallelROHS3 CompliantSurface Mount162-VFBGAAutomotive, AEC-Q100--------------------
-
16 Weeks-40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-Volatile200MHzFLASH, RAMParallelRoHS CompliantSurface Mount130-VFBGA-YES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
--40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel-Surface Mount162-VFBGA---------------------
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