MT29F6T08ETHBBM5-3RES:B TR

Micron Technology Inc. MT29F6T08ETHBBM5-3RES:B TR

Part Number:
MT29F6T08ETHBBM5-3RES:B TR
Manufacturer:
Micron Technology Inc.
Ventron No:
3237234-MT29F6T08ETHBBM5-3RES:B TR
Description:
IC FLASH 6TBIT 333MHZ LBGA
ECAD Model:
Datasheet:
MT29F6T08ETHBBM5-3RES:B TR

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Specifications
Micron Technology Inc. MT29F6T08ETHBBM5-3RES:B TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F6T08ETHBBM5-3RES:B TR.
  • Factory Lead Time
    12 Weeks
  • Operating Temperature
    0°C~70°C TA
  • Packaging
    Tape & Reel (TR)
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Technology
    FLASH - NAND
  • Voltage - Supply
    2.5V~3.6V
  • Memory Size
    6Tb 768G x 8
  • Memory Type
    Non-Volatile
  • Clock Frequency
    333MHz
  • Memory Format
    FLASH
  • Memory Interface
    Parallel
  • RoHS Status
    ROHS3 Compliant
Description
MT29F6T08ETHBBM5-3RES:B TR Overview
In this case, the memory type of the device can be classified as Non-Volatile. Case Tape & Reel (TR) is available. It is estimated that the memory size on the chip is 6Tb 768G x 8. As with most mainstream devices, this one uses FLASH-format memory. Due to its wide temperature range of 0°C~70°C TA, this device is well suited to a wide range of applications that require high performance. With 2.5V~3.6V as the supply voltage, it is capable of handling memory ics. In order to operate effectively, the memory rotates at a clock frequency within a range of 333MHz.

MT29F6T08ETHBBM5-3RES:B TR Features
The operating temperature range for this particular electronic component is between 0°C and 70°C, making it suitable for a variety of environments and applications. Its part status is currently active, indicating that it is readily available for purchase. With a moisture sensitivity level of 3, this component can withstand exposure to moisture for up to 168 hours. It utilizes FLASH - NAND technology and requires a supply voltage of 2.5V to 3.6V. The memory size is an impressive 6Tb, with 768G x 8 memory cells. It operates at a clock frequency of 333MHz and has a FLASH memory format. The memory interface is parallel, allowing for efficient data transfer. Additionally, this component is compliant with the latest RoHS regulations, ensuring its environmental friendliness.

MT29F6T08ETHBBM5-3RES:B TR Applications
There are a lot of Micron Technology Inc.
MT29F6T08ETHBBM5-3RES:B TR Memory applications.


networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
MT29F6T08ETHBBM5-3RES:B TR More Descriptions
IC FLASH 6TBIT PARALLEL 333MHZ
IC FLASH 4M PARALLEL 32PLCC
Product Comparison
The three parts on the right have similar specifications to MT29F6T08ETHBBM5-3RES:B TR.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Voltage - Supply
    Memory Size
    Memory Type
    Clock Frequency
    Memory Format
    Memory Interface
    RoHS Status
    Mounting Type
    Package / Case
    Series
    Surface Mount
    Number of Terminations
    Additional Feature
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Operating Mode
    Organization
    Memory Width
    Memory Density
    Height Seated (Max)
    Length
    Width
    View Compare
  • MT29F6T08ETHBBM5-3RES:B TR
    MT29F6T08ETHBBM5-3RES:B TR
    12 Weeks
    0°C~70°C TA
    Tape & Reel (TR)
    Active
    3 (168 Hours)
    FLASH - NAND
    2.5V~3.6V
    6Tb 768G x 8
    Non-Volatile
    333MHz
    FLASH
    Parallel
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT29AZ5A3CHHWD-18AAT.84F TR
    -
    -40°C~105°C TA
    Tape & Reel (TR)
    Last Time Buy
    3 (168 Hours)
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.9V
    4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2
    Non-Volatile
    533MHz
    FLASH, RAM
    Parallel
    ROHS3 Compliant
    Surface Mount
    162-VFBGA
    Automotive, AEC-Q100
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT29C1G12MAAIYAMR-5 AIT
    16 Weeks
    -40°C~85°C TA
    Tray
    Active
    -
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.95V
    1Gb 128M x 8 N 512M 16M x 32 LPDRAM
    Non-Volatile
    200MHz
    FLASH, RAM
    Parallel
    RoHS Compliant
    Surface Mount
    130-VFBGA
    -
    YES
    130
    LPDRAM IS ORGANISED AS 32M X 16
    BOTTOM
    NOT SPECIFIED
    1
    1.8V
    0.65mm
    compliant
    NOT SPECIFIED
    R-PBGA-B130
    1.95V
    1.7V
    SYNCHRONOUS
    128MX8
    8
    1073741824 bit
    1mm
    9mm
    8mm
  • MT29AZ5A3CHHWD-18AIT.84F
    -
    -40°C~85°C TA
    Tray
    Last Time Buy
    3 (168 Hours)
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.9V
    4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2
    Non-Volatile
    533MHz
    FLASH, RAM
    Parallel
    -
    Surface Mount
    162-VFBGA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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