MT29F64G08CBCGBL04A3WC1-M

Micron Technology Inc. MT29F64G08CBCGBL04A3WC1-M

Part Number:
MT29F64G08CBCGBL04A3WC1-M
Manufacturer:
Micron Technology Inc.
Ventron No:
3234936-MT29F64G08CBCGBL04A3WC1-M
Description:
IC FLASH 64GBIT WAFER
ECAD Model:
Datasheet:
MT29F64G08CBCGBL04A3WC1-M

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Specifications
Micron Technology Inc. MT29F64G08CBCGBL04A3WC1-M technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F64G08CBCGBL04A3WC1-M.
  • Factory Lead Time
    6 Weeks
  • Operating Temperature
    0°C~70°C TA
  • Packaging
    Bulk
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Technology
    FLASH - NAND
  • Voltage - Supply
    2.7V~3.6V
  • Memory Size
    64Gb 8G x 8
  • Memory Type
    Non-Volatile
  • Memory Format
    FLASH
  • Memory Interface
    Parallel
  • RoHS Status
    ROHS3 Compliant
Description
MT29F64G08CBCGBL04A3WC1-M Overview
In this case, the memory type of the device can be classified as Non-Volatile. Case Bulk is available. It is estimated that the memory size on the chip is 64Gb 8G x 8. As with most mainstream devices, this one uses FLASH-format memory. Due to its wide temperature range of 0°C~70°C TA, this device is well suited to a wide range of applications that require high performance. With 2.7V~3.6V as the supply voltage, it is capable of handling memory ics.

MT29F64G08CBCGBL04A3WC1-M Features
The operating temperature range for this particular electronic component is between 0°C and 70°C. This means that it can function effectively in a wide range of temperature conditions, making it versatile and suitable for various applications. The packaging for this component is bulk, indicating that it is not individually packaged but rather sold in larger quantities. Its part status is active, meaning that it is currently in production and readily available for purchase. With a moisture sensitivity level of 3, it can withstand up to 168 hours of exposure to moisture without any adverse effects. This component utilizes FLASH - NAND technology and requires a voltage supply of 2.7V to 3.6V. Its memory size is 64Gb 8G x 8, and it is a non-volatile type of memory, meaning that it can retain data even when the power is turned off. The memory format for this component is FLASH, which is a popular type of non-volatile memory. Additionally, it is compliant with ROHS3 standards, ensuring that it is environmentally friendly.

MT29F64G08CBCGBL04A3WC1-M Applications
There are a lot of Micron Technology Inc.
MT29F64G08CBCGBL04A3WC1-M Memory applications.


networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
MT29F64G08CBCGBL04A3WC1-M More Descriptions
Mlc 64G Die 8Gx8 |Micron MT29F64G08CBCGBL04A3WC1-M
MICMT29F64G08CBCGBL04A3WC1-M MLC 64G DIE
IC FLASH 64GBIT PARALLEL WAFER
Product Comparison
The three parts on the right have similar specifications to MT29F64G08CBCGBL04A3WC1-M.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Voltage - Supply
    Memory Size
    Memory Type
    Memory Format
    Memory Interface
    RoHS Status
    Mounting Type
    Package / Case
    Series
    Clock Frequency
    Surface Mount
    Number of Terminations
    Additional Feature
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Operating Mode
    Organization
    Memory Width
    Memory Density
    Height Seated (Max)
    Length
    Width
    View Compare
  • MT29F64G08CBCGBL04A3WC1-M
    MT29F64G08CBCGBL04A3WC1-M
    6 Weeks
    0°C~70°C TA
    Bulk
    Active
    3 (168 Hours)
    FLASH - NAND
    2.7V~3.6V
    64Gb 8G x 8
    Non-Volatile
    FLASH
    Parallel
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT29AZ5A3CHHWD-18AAT.84F TR
    -
    -40°C~105°C TA
    Tape & Reel (TR)
    Last Time Buy
    3 (168 Hours)
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.9V
    4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2
    Non-Volatile
    FLASH, RAM
    Parallel
    ROHS3 Compliant
    Surface Mount
    162-VFBGA
    Automotive, AEC-Q100
    533MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT29C1G12MAAIYAMR-5 AIT
    16 Weeks
    -40°C~85°C TA
    Tray
    Active
    -
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.95V
    1Gb 128M x 8 N 512M 16M x 32 LPDRAM
    Non-Volatile
    FLASH, RAM
    Parallel
    RoHS Compliant
    Surface Mount
    130-VFBGA
    -
    200MHz
    YES
    130
    LPDRAM IS ORGANISED AS 32M X 16
    BOTTOM
    NOT SPECIFIED
    1
    1.8V
    0.65mm
    compliant
    NOT SPECIFIED
    R-PBGA-B130
    1.95V
    1.7V
    SYNCHRONOUS
    128MX8
    8
    1073741824 bit
    1mm
    9mm
    8mm
  • MT29AZ5A3CHHWD-18AIT.84F
    -
    -40°C~85°C TA
    Tray
    Last Time Buy
    3 (168 Hours)
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.9V
    4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2
    Non-Volatile
    FLASH, RAM
    Parallel
    -
    Surface Mount
    162-VFBGA
    -
    533MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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