Micron Technology Inc. MT29F64G08CBCGBL04A3WC1-M
- Part Number:
- MT29F64G08CBCGBL04A3WC1-M
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3234936-MT29F64G08CBCGBL04A3WC1-M
- Description:
- IC FLASH 64GBIT WAFER
- Datasheet:
- MT29F64G08CBCGBL04A3WC1-M
Micron Technology Inc. MT29F64G08CBCGBL04A3WC1-M technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F64G08CBCGBL04A3WC1-M.
- Factory Lead Time6 Weeks
- Operating Temperature0°C~70°C TA
- PackagingBulk
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- Memory Size64Gb 8G x 8
- Memory TypeNon-Volatile
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F64G08CBCGBL04A3WC1-M Overview
In this case, the memory type of the device can be classified as Non-Volatile. Case Bulk is available. It is estimated that the memory size on the chip is 64Gb 8G x 8. As with most mainstream devices, this one uses FLASH-format memory. Due to its wide temperature range of 0°C~70°C TA, this device is well suited to a wide range of applications that require high performance. With 2.7V~3.6V as the supply voltage, it is capable of handling memory ics.
MT29F64G08CBCGBL04A3WC1-M Features
The operating temperature range for this particular electronic component is between 0°C and 70°C. This means that it can function effectively in a wide range of temperature conditions, making it versatile and suitable for various applications. The packaging for this component is bulk, indicating that it is not individually packaged but rather sold in larger quantities. Its part status is active, meaning that it is currently in production and readily available for purchase. With a moisture sensitivity level of 3, it can withstand up to 168 hours of exposure to moisture without any adverse effects. This component utilizes FLASH - NAND technology and requires a voltage supply of 2.7V to 3.6V. Its memory size is 64Gb 8G x 8, and it is a non-volatile type of memory, meaning that it can retain data even when the power is turned off. The memory format for this component is FLASH, which is a popular type of non-volatile memory. Additionally, it is compliant with ROHS3 standards, ensuring that it is environmentally friendly.
MT29F64G08CBCGBL04A3WC1-M Applications
There are a lot of Micron Technology Inc.
MT29F64G08CBCGBL04A3WC1-M Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
In this case, the memory type of the device can be classified as Non-Volatile. Case Bulk is available. It is estimated that the memory size on the chip is 64Gb 8G x 8. As with most mainstream devices, this one uses FLASH-format memory. Due to its wide temperature range of 0°C~70°C TA, this device is well suited to a wide range of applications that require high performance. With 2.7V~3.6V as the supply voltage, it is capable of handling memory ics.
MT29F64G08CBCGBL04A3WC1-M Features
The operating temperature range for this particular electronic component is between 0°C and 70°C. This means that it can function effectively in a wide range of temperature conditions, making it versatile and suitable for various applications. The packaging for this component is bulk, indicating that it is not individually packaged but rather sold in larger quantities. Its part status is active, meaning that it is currently in production and readily available for purchase. With a moisture sensitivity level of 3, it can withstand up to 168 hours of exposure to moisture without any adverse effects. This component utilizes FLASH - NAND technology and requires a voltage supply of 2.7V to 3.6V. Its memory size is 64Gb 8G x 8, and it is a non-volatile type of memory, meaning that it can retain data even when the power is turned off. The memory format for this component is FLASH, which is a popular type of non-volatile memory. Additionally, it is compliant with ROHS3 standards, ensuring that it is environmentally friendly.
MT29F64G08CBCGBL04A3WC1-M Applications
There are a lot of Micron Technology Inc.
MT29F64G08CBCGBL04A3WC1-M Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
MT29F64G08CBCGBL04A3WC1-M More Descriptions
Mlc 64G Die 8Gx8 |Micron MT29F64G08CBCGBL04A3WC1-M
MICMT29F64G08CBCGBL04A3WC1-M MLC 64G DIE
IC FLASH 64GBIT PARALLEL WAFER
MICMT29F64G08CBCGBL04A3WC1-M MLC 64G DIE
IC FLASH 64GBIT PARALLEL WAFER
The three parts on the right have similar specifications to MT29F64G08CBCGBL04A3WC1-M.
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ImagePart NumberManufacturerFactory Lead TimeOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeMemory FormatMemory InterfaceRoHS StatusMounting TypePackage / CaseSeriesClock FrequencySurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F64G08CBCGBL04A3WC1-M6 Weeks0°C~70°C TABulkActive3 (168 Hours)FLASH - NAND2.7V~3.6V64Gb 8G x 8Non-VolatileFLASHParallelROHS3 Compliant-------------------------
-
--40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-VolatileFLASH, RAMParallelROHS3 CompliantSurface Mount162-VFBGAAutomotive, AEC-Q100533MHz--------------------
-
16 Weeks-40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-VolatileFLASH, RAMParallelRoHS CompliantSurface Mount130-VFBGA-200MHzYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
--40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-VolatileFLASH, RAMParallel-Surface Mount162-VFBGA-533MHz--------------------
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