Micron Technology Inc. MT29F64G08AFAAAWP-ITZ:A TR
- Part Number:
- MT29F64G08AFAAAWP-ITZ:A TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3229080-MT29F64G08AFAAAWP-ITZ:A TR
- Description:
- IC FLASH 64GBIT 48TSOP
- ECAD Model:
-
- Datasheet:
- MT29F64G08AFAAAWP-ITZ:A TR
Micron Technology Inc. MT29F64G08AFAAAWP-ITZ:A TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F64G08AFAAAWP-ITZ:A TR.
- Factory Lead Time5 Weeks
- Mounting TypeSurface Mount
- Package / Case48-TFSOP (0.724, 18.40mm Width)
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- Base Part NumberMT29F64G08
- Memory Size64Gb 8G x 8
- Memory TypeNon-Volatile
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F64G08AFAAAWP-ITZ:A TR Overview
This product features a surface mount mounting type and a 48-TFSOP package/case with dimensions of 0.724 and 18.40mm width. It has an operating temperature range of -40°C to 85°C and is currently in active status. The technology used is FLASH - NAND and the base part number is MT29F64G08. It has a memory size of 64Gb with 8G x 8 configuration and a memory format of FLASH. The memory interface is parallel and it is compliant with ROHS3 standards.
MT29F64G08AFAAAWP-ITZ:A TR Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
MT29F64G08AFAAAWP-ITZ:A TR Applications
There are a lot of Micron Technology Inc.
MT29F64G08AFAAAWP-ITZ:A TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
This product features a surface mount mounting type and a 48-TFSOP package/case with dimensions of 0.724 and 18.40mm width. It has an operating temperature range of -40°C to 85°C and is currently in active status. The technology used is FLASH - NAND and the base part number is MT29F64G08. It has a memory size of 64Gb with 8G x 8 configuration and a memory format of FLASH. The memory interface is parallel and it is compliant with ROHS3 standards.
MT29F64G08AFAAAWP-ITZ:A TR Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
MT29F64G08AFAAAWP-ITZ:A TR Applications
There are a lot of Micron Technology Inc.
MT29F64G08AFAAAWP-ITZ:A TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MT29F64G08AFAAAWP-ITZ:A TR More Descriptions
NAND Flash Memory Parallel SLC 3.3V 64G-bit 8G x 8 Bit -40°C to 85°C 48-Pin TSOP-I SMD T/R
Active Non-Volatile ROHS3Compliant Parallel ic memory -40C~85C TA 2.7V~3.6V 64Gb 8G x 8
NAND Flash SLC 64G 8GX8 TSOP DDP
IC FLSH 64GBIT PARALLEL 48TSOP I
IC FLASH 64G PARALLEL 48TSOP I
Active Non-Volatile ROHS3Compliant Parallel ic memory -40C~85C TA 2.7V~3.6V 64Gb 8G x 8
NAND Flash SLC 64G 8GX8 TSOP DDP
IC FLSH 64GBIT PARALLEL 48TSOP I
IC FLASH 64G PARALLEL 48TSOP I
The three parts on the right have similar specifications to MT29F64G08AFAAAWP-ITZ:A TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeMemory FormatMemory InterfaceRoHS StatusSeriesClock FrequencySurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F64G08AFAAAWP-ITZ:A TR5 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)FLASH - NAND2.7V~3.6VMT29F64G0864Gb 8G x 8Non-VolatileFLASHParallelROHS3 Compliant----------------------- -
-Surface Mount162-VFBGA-40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V-4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-VolatileFLASH, RAMParallelROHS3 CompliantAutomotive, AEC-Q100533MHz--------------------
-
16 WeeksSurface Mount130-VFBGA-40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V-1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-VolatileFLASH, RAMParallelRoHS Compliant-200MHzYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
-Surface Mount162-VFBGA-40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V-4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-VolatileFLASH, RAMParallel--533MHz--------------------
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
-
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