Micron Technology Inc. MT29F512G08CEHBBJ4-3RES:B TR

Name: MT29F512G08CEHBBJ4-3RES:B TR
Brand: Micron Technology Inc.
SKU: 3238943-MT29F512G08CEHBBJ4-3RES:B TR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MT29F512G08CEHBBJ4-3RES:B TR

Manufacturer:: Micron Technology Inc.

Ventron No:: 3238943-MT29F512G08CEHBBJ4-3RES:B TR

Description:: IC FLASH 512GBIT 333MHZ 132VBGA

ECAD Model:

Datasheet:: MT29F512G08CEHBBJ4-3RES:B TR

Specifications

Micron Technology Inc. MT29F512G08CEHBBJ4-3RES:B TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F512G08CEHBBJ4-3RES:B TR.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
132-VBGA
Operating Temperature
0°C~70°C TA
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Technology
FLASH - NAND
Voltage - Supply
2.5V~3.6V
Memory Size
512Gb 64G x 8
Memory Type
Non-Volatile
Clock Frequency
333MHz
Memory Format
FLASH
Memory Interface
Parallel
RoHS Status
ROHS3 Compliant

Description

MT29F512G08CEHBBJ4-3RES:B TR Overview
The package or case for this particular electronic component is a 132-VBGA, which is a type of surface-mount package that is commonly used for integrated circuits. The packaging for this component is a Tape & Reel (TR) format, which is a method of packaging and shipping electronic components in a continuous strip. This component is currently in active production, meaning it is readily available for purchase. It has a Moisture Sensitivity Level (MSL) of 3, which indicates that it can withstand exposure to moisture for up to 168 hours. The technology used in this component is FLASH - NAND, which is a type of non-volatile memory technology. It requires a voltage supply of 2.5V~3.6V and has a memory size of 512Gb 64G x 8. The clock frequency for this component is 333MHz, and it is designed in a FLASH memory format with a parallel memory interface.

MT29F512G08CEHBBJ4-3RES:B TR Features
Package / Case: 132-VBGA

MT29F512G08CEHBBJ4-3RES:B TR Applications
There are a lot of Micron Technology Inc.
MT29F512G08CEHBBJ4-3RES:B TR Memory applications.

personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic

MT29F512G08CEHBBJ4-3RES:B TR More Descriptions

IC FLASH 512GBIT PAR 132VBGA
IC FLASH 512G PARALLEL 333MHZ

Product Comparison

The three parts on the right have similar specifications to MT29F512G08CEHBBJ4-3RES:B TR.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Voltage - Supply

Memory Size

Memory Type

Clock Frequency

Memory Format

Memory Interface

RoHS Status

Series

Surface Mount

Number of Terminations

Additional Feature

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Operating Mode

Organization

Memory Width

Memory Density

Height Seated (Max)

Length

Width

View Compare
MT29F512G08CEHBBJ4-3RES:B TR

Micron Technology Inc.

12 Weeks

Surface Mount

132-VBGA

0°C~70°C TA

Tape & Reel (TR)

Active

3 (168 Hours)

FLASH - NAND

2.5V~3.6V

512Gb 64G x 8

Non-Volatile

333MHz

FLASH

Parallel

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MT29AZ5A3CHHWD-18AAT.84F TR

Micron Technology Inc.

-

Surface Mount

162-VFBGA

-40°C~105°C TA

Tape & Reel (TR)

Last Time Buy

3 (168 Hours)

FLASH - NAND, Mobile LPDRAM

1.7V~1.9V

4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2

Non-Volatile

533MHz

FLASH, RAM

Parallel

ROHS3 Compliant

Automotive, AEC-Q100

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MT29F512G08CEHBBJ4-3RES:B TR vs MT29AZ5A3CHHWD-18AAT.84F TR
MT29C1G12MAAIYAMR-5 AIT

Micron Technology Inc.

16 Weeks

Surface Mount

130-VFBGA

-40°C~85°C TA

Tray

Active

-

FLASH - NAND, Mobile LPDRAM

1.7V~1.95V

1Gb 128M x 8 N 512M 16M x 32 LPDRAM

Non-Volatile

200MHz

FLASH, RAM

Parallel

RoHS Compliant

-

YES

130

LPDRAM IS ORGANISED AS 32M X 16

BOTTOM

NOT SPECIFIED

1

1.8V

0.65mm

compliant

NOT SPECIFIED

R-PBGA-B130

1.95V

1.7V

SYNCHRONOUS

128MX8

8

1073741824 bit

1mm

9mm

8mm

MT29F512G08CEHBBJ4-3RES:B TR vs MT29C1G12MAAIYAMR-5 AIT
MT29AZ5A3CHHWD-18AIT.84F

Micron Technology Inc.

-

Surface Mount

162-VFBGA

-40°C~85°C TA

Tray

Last Time Buy

3 (168 Hours)

FLASH - NAND, Mobile LPDRAM

1.7V~1.9V

4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2

Non-Volatile

533MHz

FLASH, RAM

Parallel

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MT29F512G08CEHBBJ4-3RES:B TR vs MT29AZ5A3CHHWD-18AIT.84F