MT29F4G16ABBDAH4:D TR

Micron Technology Inc. MT29F4G16ABBDAH4:D TR

Part Number:
MT29F4G16ABBDAH4:D TR
Manufacturer:
Micron Technology Inc.
Ventron No:
3233054-MT29F4G16ABBDAH4:D TR
Description:
IC FLASH 4GBIT 63VFBGA
ECAD Model:
Datasheet:
MT29F4G16ABBDAH4:D TR

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Specifications
Micron Technology Inc. MT29F4G16ABBDAH4:D TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F4G16ABBDAH4:D TR.
  • Factory Lead Time
    3 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    63-VFBGA
  • Operating Temperature
    0°C~70°C TA
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Technology
    FLASH - NAND
  • Voltage - Supply
    1.7V~1.95V
  • Base Part Number
    MT29F4G16
  • Memory Size
    4Gb 256M x 16
  • Memory Type
    Non-Volatile
  • Memory Format
    FLASH
  • Memory Interface
    Parallel
  • RoHS Status
    ROHS3 Compliant
Description
MT29F4G16ABBDAH4:D TR Overview
Its memory type can be classified as Non-Volatile. It comes in a Tape & Reel (TR). It is available in 63-VFBGA case. The memory size of the chip is 4Gb 256M x 16 Mb. This device utilizes a FLASH format memory which is of mainstream design. With an extended designed operating temperature of 0°C~70°C TA, this device is capable of lots of demanding applications. It is supplied votage within 1.7V~1.95V. Its recommended mounting type is Surface Mount. MT29F4G16, as the device's base part number, is frequently referred in order to select similar parts.

MT29F4G16ABBDAH4:D TR Features
Package / Case: 63-VFBGA


MT29F4G16ABBDAH4:D TR Applications
There are a lot of Micron Technology Inc.
MT29F4G16ABBDAH4:D TR Memory applications.


Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
MT29F4G16ABBDAH4:D TR More Descriptions
SLC NAND Flash Parallel 1.8V 4G-bit 256M x 16 25ns 63-Pin VFBGA T/R
IC FLASH 4GBIT PARALLEL 63VFBGA
IC FLASH 256M SPI 24TPBGA
Memory IC MT29F4G16
Product Comparison
The three parts on the right have similar specifications to MT29F4G16ABBDAH4:D TR.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Voltage - Supply
    Base Part Number
    Memory Size
    Memory Type
    Memory Format
    Memory Interface
    RoHS Status
    Series
    Clock Frequency
    Surface Mount
    Number of Terminations
    Additional Feature
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Operating Mode
    Organization
    Memory Width
    Memory Density
    Height Seated (Max)
    Length
    Width
    View Compare
  • MT29F4G16ABBDAH4:D TR
    MT29F4G16ABBDAH4:D TR
    3 Weeks
    Surface Mount
    63-VFBGA
    0°C~70°C TA
    Tape & Reel (TR)
    2013
    Obsolete
    3 (168 Hours)
    FLASH - NAND
    1.7V~1.95V
    MT29F4G16
    4Gb 256M x 16
    Non-Volatile
    FLASH
    Parallel
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT29AZ5A3CHHWD-18AAT.84F TR
    -
    Surface Mount
    162-VFBGA
    -40°C~105°C TA
    Tape & Reel (TR)
    -
    Last Time Buy
    3 (168 Hours)
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.9V
    -
    4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2
    Non-Volatile
    FLASH, RAM
    Parallel
    ROHS3 Compliant
    Automotive, AEC-Q100
    533MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT29C1G12MAAIYAMR-5 AIT
    16 Weeks
    Surface Mount
    130-VFBGA
    -40°C~85°C TA
    Tray
    -
    Active
    -
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.95V
    -
    1Gb 128M x 8 N 512M 16M x 32 LPDRAM
    Non-Volatile
    FLASH, RAM
    Parallel
    RoHS Compliant
    -
    200MHz
    YES
    130
    LPDRAM IS ORGANISED AS 32M X 16
    BOTTOM
    NOT SPECIFIED
    1
    1.8V
    0.65mm
    compliant
    NOT SPECIFIED
    R-PBGA-B130
    1.95V
    1.7V
    SYNCHRONOUS
    128MX8
    8
    1073741824 bit
    1mm
    9mm
    8mm
  • MT29AZ5A3CHHWD-18AIT.84F
    -
    Surface Mount
    162-VFBGA
    -40°C~85°C TA
    Tray
    -
    Last Time Buy
    3 (168 Hours)
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.9V
    -
    4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2
    Non-Volatile
    FLASH, RAM
    Parallel
    -
    -
    533MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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