Micron Technology Inc. MT29F4G08ABBDAH4-IT:D
- Part Number:
- MT29F4G08ABBDAH4-IT:D
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3233396-MT29F4G08ABBDAH4-IT:D
- Description:
- IC FLASH 4GBIT 63VFBGA
- ECAD Model:
-
- Datasheet:
- MT29F4G08ABBDAH4-IT:D
Micron Technology Inc. MT29F4G08ABBDAH4-IT:D technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F4G08ABBDAH4-IT:D.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case63-VFBGA
- Number of Pins63
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2011
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations63
- TechnologyFLASH - NAND
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMT29F4G08
- Operating Supply Voltage1.8V
- Supply Voltage-Max (Vsup)1.95V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size4Gb 512M x 8
- Nominal Supply Current20mA
- Memory TypeNon-Volatile
- Access Time25 ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization512MX8
- Memory Width8
- Address Bus Width1b
- Density4 Gb
- Standby Current-Max0.00005A
- Sync/AsyncAsynchronous
- Word Size8b
- Data PollingNO
- Toggle BitNO
- Command User InterfaceYES
- Number of Sectors/Size4K
- Sector Size128K
- Page Size2kB
- Ready/BusyYES
- Height1mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MT29F4G08ABBDAH4-IT:D Overview
The FLASH - NAND technology used in this memory device allows for a high density of 4 Gb, with a memory size of 4Gb 512M x 8. This device has a total of 63 pins and a terminal position of BOTTOM, making it easy to integrate into any system. Its operating temperature range is -40°C~85°C TA, ensuring reliable performance in various environments. During the reflow process, the Time@Peak Reflow Temperature-Max (s) is 30, providing a quick and efficient production process. Additionally, the Standby Current-Max is an impressively low 0.00005A, making it energy efficient. With a user-friendly Command User Interface, this memory device offers convenience and ease of use.
MT29F4G08ABBDAH4-IT:D Features
Package / Case: 63-VFBGA
63 Pins
Operating Supply Voltage:1.8V
MT29F4G08ABBDAH4-IT:D Applications
There are a lot of Micron Technology Inc.
MT29F4G08ABBDAH4-IT:D Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The FLASH - NAND technology used in this memory device allows for a high density of 4 Gb, with a memory size of 4Gb 512M x 8. This device has a total of 63 pins and a terminal position of BOTTOM, making it easy to integrate into any system. Its operating temperature range is -40°C~85°C TA, ensuring reliable performance in various environments. During the reflow process, the Time@Peak Reflow Temperature-Max (s) is 30, providing a quick and efficient production process. Additionally, the Standby Current-Max is an impressively low 0.00005A, making it energy efficient. With a user-friendly Command User Interface, this memory device offers convenience and ease of use.
MT29F4G08ABBDAH4-IT:D Features
Package / Case: 63-VFBGA
63 Pins
Operating Supply Voltage:1.8V
MT29F4G08ABBDAH4-IT:D Applications
There are a lot of Micron Technology Inc.
MT29F4G08ABBDAH4-IT:D Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MT29F4G08ABBDAH4-IT:D More Descriptions
SLC NAND Flash Parallel 1.8V 4Gbit 512M x 8bit 25ns 63-Pin VFBGA
M60A NAND FLASH 512MX8 PLASTIC PBF VFBGA 1.8V MASS STORAGE
NAND Flash, SLC NAND Flash, 4Gb, 1.8V, 63-ball VFBGA, RoHSMicron SCT
Flash Memory, 4Gbit, -40 To 85Deg C; Flash Memory Type:Slc Nand; Memory Configuration:512M X 8Bit; Interfaces:Parallel; Ic Case/Package:Vfbga; No. Of Pins:63Pins; Clock Frequency Max:50Mhz; Access Time:-; Supply Voltage Min:1.7V Rohs Compliant: Yes |Micron MT29F4G08ABBDAH4-IT:D
M60A NAND FLASH 512MX8 PLASTIC PBF VFBGA 1.8V MASS STORAGE
NAND Flash, SLC NAND Flash, 4Gb, 1.8V, 63-ball VFBGA, RoHSMicron SCT
Flash Memory, 4Gbit, -40 To 85Deg C; Flash Memory Type:Slc Nand; Memory Configuration:512M X 8Bit; Interfaces:Parallel; Ic Case/Package:Vfbga; No. Of Pins:63Pins; Clock Frequency Max:50Mhz; Access Time:-; Supply Voltage Min:1.7V Rohs Compliant: Yes |Micron MT29F4G08ABBDAH4-IT:D
The three parts on the right have similar specifications to MT29F4G08ABBDAH4-IT:D.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Base Part NumberOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNominal Supply CurrentMemory TypeAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthAddress Bus WidthDensityStandby Current-MaxSync/AsyncWord SizeData PollingToggle BitCommand User InterfaceNumber of Sectors/SizeSector SizePage SizeReady/BusyHeightRadiation HardeningRoHS StatusLead FreeSeriesClock FrequencySurface MountAdditional FeatureReach Compliance CodeJESD-30 CodeOperating ModeMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F4G08ABBDAH4-IT:D4 WeeksSurface MountSurface Mount63-VFBGA63-40°C~85°C TATray2011yesActive3 (168 Hours)63FLASH - NAND1.7V~1.95VBOTTOM26011.8V0.8mm30MT29F4G081.8V1.95V1.7V4Gb 512M x 820mANon-Volatile25 nsFLASHParallel512MX881b4 Gb0.00005AAsynchronous8bNONOYES4K128K2kBYES1mmNoROHS3 CompliantLead Free------------ -
--Surface Mount162-VFBGA--40°C~105°C TATape & Reel (TR)--Last Time Buy3 (168 Hours)-FLASH - NAND, Mobile LPDRAM1.7V~1.9V----------4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2-Non-Volatile-FLASH, RAMParallel----------------ROHS3 Compliant-Automotive, AEC-Q100533MHz---------
-
16 Weeks-Surface Mount130-VFBGA--40°C~85°C TATray--Active-130FLASH - NAND, Mobile LPDRAM1.7V~1.95VBOTTOMNOT SPECIFIED11.8V0.65mmNOT SPECIFIED--1.95V1.7V1Gb 128M x 8 N 512M 16M x 32 LPDRAM-Non-Volatile-FLASH, RAMParallel128MX88--------------RoHS Compliant--200MHzYESLPDRAM IS ORGANISED AS 32M X 16compliantR-PBGA-B130SYNCHRONOUS1073741824 bit1mm9mm8mm
-
--Surface Mount162-VFBGA--40°C~85°C TATray--Last Time Buy3 (168 Hours)-FLASH - NAND, Mobile LPDRAM1.7V~1.9V----------4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2-Non-Volatile-FLASH, RAMParallel-------------------533MHz---------
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
-
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