Micron Technology Inc. MT29F4G08ABAEAH4-IT:E TR
- Part Number:
- MT29F4G08ABAEAH4-IT:E TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3229982-MT29F4G08ABAEAH4-IT:E TR
- Description:
- IC FLASH 4GBIT 63VFBGA
- Datasheet:
- MT29F4G08ABAEAH4-IT:E TR
Micron Technology Inc. MT29F4G08ABAEAH4-IT:E TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F4G08ABAEAH4-IT:E TR.
- Factory Lead Time9 Weeks
- Mounting TypeSurface Mount
- Package / Case63-VFBGA
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- Base Part NumberMT29F4G08
- Memory Size4Gb 512M x 8
- Memory TypeNon-Volatile
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F4G08ABAEAH4-IT:E TR Overview
The mounting type for this particular device is surface mount, making it easy to install and use. It comes in a 63-VFBGA package/case, providing a compact and efficient design. The operating temperature range for this device is -40°C to 85°C TA, ensuring its functionality in a wide range of environments. The packaging for this device is tape and reel (TR), which allows for easy handling and storage. The technology used in this device is FLASH - NAND, providing fast and reliable data storage. It operates on a voltage supply of 2.7V to 3.6V, making it compatible with a variety of power sources. This device utilizes non-volatile memory, ensuring that data is not lost during power outages. The memory format is FLASH and the interface is parallel, allowing for efficient data transfer. Additionally, this device is ROHS3 compliant, meeting environmental standards for safe and sustainable electronics.
MT29F4G08ABAEAH4-IT:E TR Features
Package / Case: 63-VFBGA
MT29F4G08ABAEAH4-IT:E TR Applications
There are a lot of Micron Technology Inc.
MT29F4G08ABAEAH4-IT:E TR Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
The mounting type for this particular device is surface mount, making it easy to install and use. It comes in a 63-VFBGA package/case, providing a compact and efficient design. The operating temperature range for this device is -40°C to 85°C TA, ensuring its functionality in a wide range of environments. The packaging for this device is tape and reel (TR), which allows for easy handling and storage. The technology used in this device is FLASH - NAND, providing fast and reliable data storage. It operates on a voltage supply of 2.7V to 3.6V, making it compatible with a variety of power sources. This device utilizes non-volatile memory, ensuring that data is not lost during power outages. The memory format is FLASH and the interface is parallel, allowing for efficient data transfer. Additionally, this device is ROHS3 compliant, meeting environmental standards for safe and sustainable electronics.
MT29F4G08ABAEAH4-IT:E TR Features
Package / Case: 63-VFBGA
MT29F4G08ABAEAH4-IT:E TR Applications
There are a lot of Micron Technology Inc.
MT29F4G08ABAEAH4-IT:E TR Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
MT29F4G08ABAEAH4-IT:E TR More Descriptions
IC FLASH 4G PARALLEL 63VFBGA
IC FLASH 4GBIT 63VFBGA
IC DRAM 32G 1600MHZ
IC FLASH 4GBIT 63VFBGA
IC DRAM 32G 1600MHZ
The three parts on the right have similar specifications to MT29F4G08ABAEAH4-IT:E TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeMemory FormatMemory InterfaceRoHS StatusSeriesClock FrequencySurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F4G08ABAEAH4-IT:E TR9 WeeksSurface Mount63-VFBGA-40°C~85°C TATape & Reel (TR)Obsolete3 (168 Hours)FLASH - NAND2.7V~3.6VMT29F4G084Gb 512M x 8Non-VolatileFLASHParallelROHS3 Compliant-----------------------
-
-Surface Mount162-VFBGA-40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V-4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-VolatileFLASH, RAMParallelROHS3 CompliantAutomotive, AEC-Q100533MHz--------------------
-
16 WeeksSurface Mount130-VFBGA-40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V-1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-VolatileFLASH, RAMParallelRoHS Compliant-200MHzYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
-Surface Mount162-VFBGA-40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V-4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-VolatileFLASH, RAMParallel--533MHz--------------------
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