Micron Technology Inc. MT29F4G08ABADAH4:D TR
- Part Number:
- MT29F4G08ABADAH4:D TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3233094-MT29F4G08ABADAH4:D TR
- Description:
- IC FLASH 4GBIT 63VFBGA
- Datasheet:
- MT29F4G08ABADAH4:D TR
Micron Technology Inc. MT29F4G08ABADAH4:D TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F4G08ABADAH4:D TR.
- Factory Lead Time5 Weeks
- Mounting TypeSurface Mount
- Package / Case63-VFBGA
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Published2013
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- Base Part NumberMT29F4G08
- Memory Size4Gb 512M x 8
- Memory TypeNon-Volatile
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F4G08ABADAH4:D TR Overview
The Mounting Type for this particular component is Surface Mount, which means it can be easily attached to a circuit board without the need for any additional hardware. The Package / Case is 63-VFBGA, indicating that it has a 63-ball grid array package. This package is compact and takes up less space on the circuit board, making it ideal for devices with limited space. The Operating Temperature for this component is 0°C~70°C TA, meaning it can operate within this temperature range without any issues. The Part Status is Active, which means it is currently in production and readily available for purchase. This technology is FLASH - NAND, which is a type of non-volatile memory that can retain data even when the power is turned off. The Voltage - Supply range for this component is 2.7V~3.6V, making it compatible with a wide range of devices. Its Base Part Number is MT29F4G08, indicating its specific model. With a Memory Size of 4Gb 512M x 8, this component has a total capacity of 4 gigabits, with each bit consisting of 8 memory cells. Its Memory Type is Non-Volatile, meaning it can retain data even without a power source. Additionally, this component is also RoHS3 Compliant, ensuring that it meets the necessary environmental standards.
MT29F4G08ABADAH4:D TR Features
Package / Case: 63-VFBGA
MT29F4G08ABADAH4:D TR Applications
There are a lot of Micron Technology Inc.
MT29F4G08ABADAH4:D TR Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
The Mounting Type for this particular component is Surface Mount, which means it can be easily attached to a circuit board without the need for any additional hardware. The Package / Case is 63-VFBGA, indicating that it has a 63-ball grid array package. This package is compact and takes up less space on the circuit board, making it ideal for devices with limited space. The Operating Temperature for this component is 0°C~70°C TA, meaning it can operate within this temperature range without any issues. The Part Status is Active, which means it is currently in production and readily available for purchase. This technology is FLASH - NAND, which is a type of non-volatile memory that can retain data even when the power is turned off. The Voltage - Supply range for this component is 2.7V~3.6V, making it compatible with a wide range of devices. Its Base Part Number is MT29F4G08, indicating its specific model. With a Memory Size of 4Gb 512M x 8, this component has a total capacity of 4 gigabits, with each bit consisting of 8 memory cells. Its Memory Type is Non-Volatile, meaning it can retain data even without a power source. Additionally, this component is also RoHS3 Compliant, ensuring that it meets the necessary environmental standards.
MT29F4G08ABADAH4:D TR Features
Package / Case: 63-VFBGA
MT29F4G08ABADAH4:D TR Applications
There are a lot of Micron Technology Inc.
MT29F4G08ABADAH4:D TR Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
MT29F4G08ABADAH4:D TR More Descriptions
Active 2013 Non-Volatile ROHS3Compliant ic memory 0C~70C TA 2.7V~3.6V 4Gb 512M x 8
SLC NAND Flash Parallel 3.3V 4Gbit 512M x 8Bit 63-Pin VFBGA T/R
IC FLASH 4GBIT PARALLEL 63VFBGA
AUTOMOTIVE LOW-VOLTAGE 6A STEP-D
SLC NAND Flash Parallel 3.3V 4Gbit 512M x 8Bit 63-Pin VFBGA T/R
IC FLASH 4GBIT PARALLEL 63VFBGA
AUTOMOTIVE LOW-VOLTAGE 6A STEP-D
The three parts on the right have similar specifications to MT29F4G08ABADAH4:D TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeMemory FormatMemory InterfaceRoHS StatusSeriesClock FrequencySurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F4G08ABADAH4:D TR5 WeeksSurface Mount63-VFBGA0°C~70°C TATape & Reel (TR)2013Active3 (168 Hours)FLASH - NAND2.7V~3.6VMT29F4G084Gb 512M x 8Non-VolatileFLASHParallelROHS3 Compliant-----------------------
-
-Surface Mount162-VFBGA-40°C~105°C TATape & Reel (TR)-Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V-4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-VolatileFLASH, RAMParallelROHS3 CompliantAutomotive, AEC-Q100533MHz--------------------
-
16 WeeksSurface Mount130-VFBGA-40°C~85°C TATray-Active-FLASH - NAND, Mobile LPDRAM1.7V~1.95V-1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-VolatileFLASH, RAMParallelRoHS Compliant-200MHzYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
-Surface Mount162-VFBGA-40°C~85°C TATray-Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V-4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-VolatileFLASH, RAMParallel--533MHz--------------------
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