Micron Technology Inc. MT29F3T08EUCBBM4-37:B TR
- Part Number:
- MT29F3T08EUCBBM4-37:B TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3237242-MT29F3T08EUCBBM4-37:B TR
- Description:
- IC FLASH 3TBIT 267MHZ 132LBGA
- Datasheet:
- MT29F3T08EUCBBM4-37:B TR
Micron Technology Inc. MT29F3T08EUCBBM4-37:B TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F3T08EUCBBM4-37:B TR.
- Factory Lead Time12 Weeks
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- Memory Size3Tb 384G x 8
- Memory TypeNon-Volatile
- Clock Frequency267MHz
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F3T08EUCBBM4-37:B TR Overview
There is a memory type Non-Volatile for this type of device. The case comes in the Tape & Reel (TR) style. This chip has an 3Tb 384G x 8 size of memory on it, so a lot of data can be stored on it. Memory data is stored in FLASH-format, which is common in mainstream devices. 0°C~70°C TA is an extended operating temperature range, making this device ideal for demanding applications. A supply voltage of 2.7V~3.6V can be applied to it. During the rotation of the clock, the ic memory chip is set as 267MHz.
MT29F3T08EUCBBM4-37:B TR Features
The operating temperature for this particular electronic component is within the range of 0°C to 70°C, as indicated by the TA designation. This part is currently active and available for use. It has a Moisture Sensitivity Level (MSL) of 3, meaning it can withstand exposure to moisture for up to 168 hours. The technology used in this component is FLASH - NAND, which is a type of non-volatile memory. It has a memory size of 3 terabytes, with 384 gigabits per unit, and is organized into 8 bits per cell. The clock frequency for this component is 267MHz. Its memory format is FLASH and it uses a parallel interface. Additionally, it is compliant with the Restriction of Hazardous Substances (RoHS) directive, also known as ROHS3.
MT29F3T08EUCBBM4-37:B TR Applications
There are a lot of Micron Technology Inc.
MT29F3T08EUCBBM4-37:B TR Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
There is a memory type Non-Volatile for this type of device. The case comes in the Tape & Reel (TR) style. This chip has an 3Tb 384G x 8 size of memory on it, so a lot of data can be stored on it. Memory data is stored in FLASH-format, which is common in mainstream devices. 0°C~70°C TA is an extended operating temperature range, making this device ideal for demanding applications. A supply voltage of 2.7V~3.6V can be applied to it. During the rotation of the clock, the ic memory chip is set as 267MHz.
MT29F3T08EUCBBM4-37:B TR Features
The operating temperature for this particular electronic component is within the range of 0°C to 70°C, as indicated by the TA designation. This part is currently active and available for use. It has a Moisture Sensitivity Level (MSL) of 3, meaning it can withstand exposure to moisture for up to 168 hours. The technology used in this component is FLASH - NAND, which is a type of non-volatile memory. It has a memory size of 3 terabytes, with 384 gigabits per unit, and is organized into 8 bits per cell. The clock frequency for this component is 267MHz. Its memory format is FLASH and it uses a parallel interface. Additionally, it is compliant with the Restriction of Hazardous Substances (RoHS) directive, also known as ROHS3.
MT29F3T08EUCBBM4-37:B TR Applications
There are a lot of Micron Technology Inc.
MT29F3T08EUCBBM4-37:B TR Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
MT29F3T08EUCBBM4-37:B TR More Descriptions
IC SRAM 2M PARALLEL 48BGA
IC FLASH 3TBIT PARALLEL 267MHZ
IC FLASH 3TBIT PARALLEL 267MHZ
The three parts on the right have similar specifications to MT29F3T08EUCBBM4-37:B TR.
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ImagePart NumberManufacturerFactory Lead TimeOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusMounting TypePackage / CaseSeriesSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F3T08EUCBBM4-37:B TR12 Weeks0°C~70°C TATape & Reel (TR)Active3 (168 Hours)FLASH - NAND2.7V~3.6V3Tb 384G x 8Non-Volatile267MHzFLASHParallelROHS3 Compliant------------------------
-
--40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallelROHS3 CompliantSurface Mount162-VFBGAAutomotive, AEC-Q100--------------------
-
16 Weeks-40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-Volatile200MHzFLASH, RAMParallelRoHS CompliantSurface Mount130-VFBGA-YES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
--40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel-Surface Mount162-VFBGA---------------------
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