MT29F3T08EUCBBM4-37:B TR

Micron Technology Inc. MT29F3T08EUCBBM4-37:B TR

Part Number:
MT29F3T08EUCBBM4-37:B TR
Manufacturer:
Micron Technology Inc.
Ventron No:
3237242-MT29F3T08EUCBBM4-37:B TR
Description:
IC FLASH 3TBIT 267MHZ 132LBGA
ECAD Model:
Datasheet:
MT29F3T08EUCBBM4-37:B TR

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Specifications
Micron Technology Inc. MT29F3T08EUCBBM4-37:B TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F3T08EUCBBM4-37:B TR.
  • Factory Lead Time
    12 Weeks
  • Operating Temperature
    0°C~70°C TA
  • Packaging
    Tape & Reel (TR)
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Technology
    FLASH - NAND
  • Voltage - Supply
    2.7V~3.6V
  • Memory Size
    3Tb 384G x 8
  • Memory Type
    Non-Volatile
  • Clock Frequency
    267MHz
  • Memory Format
    FLASH
  • Memory Interface
    Parallel
  • RoHS Status
    ROHS3 Compliant
Description
MT29F3T08EUCBBM4-37:B TR Overview
There is a memory type Non-Volatile for this type of device. The case comes in the Tape & Reel (TR) style. This chip has an 3Tb 384G x 8 size of memory on it, so a lot of data can be stored on it. Memory data is stored in FLASH-format, which is common in mainstream devices. 0°C~70°C TA is an extended operating temperature range, making this device ideal for demanding applications. A supply voltage of 2.7V~3.6V can be applied to it. During the rotation of the clock, the ic memory chip is set as 267MHz.

MT29F3T08EUCBBM4-37:B TR Features
The operating temperature for this particular electronic component is within the range of 0°C to 70°C, as indicated by the TA designation. This part is currently active and available for use. It has a Moisture Sensitivity Level (MSL) of 3, meaning it can withstand exposure to moisture for up to 168 hours. The technology used in this component is FLASH - NAND, which is a type of non-volatile memory. It has a memory size of 3 terabytes, with 384 gigabits per unit, and is organized into 8 bits per cell. The clock frequency for this component is 267MHz. Its memory format is FLASH and it uses a parallel interface. Additionally, it is compliant with the Restriction of Hazardous Substances (RoHS) directive, also known as ROHS3.

MT29F3T08EUCBBM4-37:B TR Applications
There are a lot of Micron Technology Inc.
MT29F3T08EUCBBM4-37:B TR Memory applications.


personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
MT29F3T08EUCBBM4-37:B TR More Descriptions
IC SRAM 2M PARALLEL 48BGA
IC FLASH 3TBIT PARALLEL 267MHZ
Product Comparison
The three parts on the right have similar specifications to MT29F3T08EUCBBM4-37:B TR.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Voltage - Supply
    Memory Size
    Memory Type
    Clock Frequency
    Memory Format
    Memory Interface
    RoHS Status
    Mounting Type
    Package / Case
    Series
    Surface Mount
    Number of Terminations
    Additional Feature
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Operating Mode
    Organization
    Memory Width
    Memory Density
    Height Seated (Max)
    Length
    Width
    View Compare
  • MT29F3T08EUCBBM4-37:B TR
    MT29F3T08EUCBBM4-37:B TR
    12 Weeks
    0°C~70°C TA
    Tape & Reel (TR)
    Active
    3 (168 Hours)
    FLASH - NAND
    2.7V~3.6V
    3Tb 384G x 8
    Non-Volatile
    267MHz
    FLASH
    Parallel
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT29AZ5A3CHHWD-18AAT.84F TR
    -
    -40°C~105°C TA
    Tape & Reel (TR)
    Last Time Buy
    3 (168 Hours)
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.9V
    4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2
    Non-Volatile
    533MHz
    FLASH, RAM
    Parallel
    ROHS3 Compliant
    Surface Mount
    162-VFBGA
    Automotive, AEC-Q100
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT29C1G12MAAIYAMR-5 AIT
    16 Weeks
    -40°C~85°C TA
    Tray
    Active
    -
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.95V
    1Gb 128M x 8 N 512M 16M x 32 LPDRAM
    Non-Volatile
    200MHz
    FLASH, RAM
    Parallel
    RoHS Compliant
    Surface Mount
    130-VFBGA
    -
    YES
    130
    LPDRAM IS ORGANISED AS 32M X 16
    BOTTOM
    NOT SPECIFIED
    1
    1.8V
    0.65mm
    compliant
    NOT SPECIFIED
    R-PBGA-B130
    1.95V
    1.7V
    SYNCHRONOUS
    128MX8
    8
    1073741824 bit
    1mm
    9mm
    8mm
  • MT29AZ5A3CHHWD-18AIT.84F
    -
    -40°C~85°C TA
    Tray
    Last Time Buy
    3 (168 Hours)
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.9V
    4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2
    Non-Volatile
    533MHz
    FLASH, RAM
    Parallel
    -
    Surface Mount
    162-VFBGA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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