Micron Technology Inc. MT29F32G08ABEABM73A3WC1P
- Part Number:
- MT29F32G08ABEABM73A3WC1P
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3246054-MT29F32G08ABEABM73A3WC1P
- Description:
- IC FLASH 32GBIT WAFER
- Datasheet:
- MT29F32G08ABEABM73A3WC1P
Micron Technology Inc. MT29F32G08ABEABM73A3WC1P technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F32G08ABEABM73A3WC1P.
- Mounting TypeSurface Mount
- Package / CaseDie
- Supplier Device PackageDie
- Operating Temperature0°C~70°C TA
- PackagingBulk
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Max Operating Temperature70°C
- Min Operating Temperature0°C
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- InterfaceParallel
- Memory Size32Gb 4G x 8
- Memory TypeNon-Volatile
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F32G08ABEABM73A3WC1P Overview
This product is packaged as a die and has a supplier device package of die. It was published in 2016 and has a moisture sensitivity level of 3, meaning it can withstand up to 168 hours of exposure to moisture. The maximum operating temperature for this product is 70°C. It requires a voltage supply of 2.7V to 3.6V and has a parallel interface. This product is a non-volatile memory type and has a FLASH memory format. It is also ROHS3 compliant, meaning it meets the requirements for the Restriction of Hazardous Substances Directive.
MT29F32G08ABEABM73A3WC1P Features
Package / Case: Die
MT29F32G08ABEABM73A3WC1P Applications
There are a lot of Micron Technology Inc.
MT29F32G08ABEABM73A3WC1P Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
This product is packaged as a die and has a supplier device package of die. It was published in 2016 and has a moisture sensitivity level of 3, meaning it can withstand up to 168 hours of exposure to moisture. The maximum operating temperature for this product is 70°C. It requires a voltage supply of 2.7V to 3.6V and has a parallel interface. This product is a non-volatile memory type and has a FLASH memory format. It is also ROHS3 compliant, meaning it meets the requirements for the Restriction of Hazardous Substances Directive.
MT29F32G08ABEABM73A3WC1P Features
Package / Case: Die
MT29F32G08ABEABM73A3WC1P Applications
There are a lot of Micron Technology Inc.
MT29F32G08ABEABM73A3WC1P Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
MT29F32G08ABEABM73A3WC1P More Descriptions
IC FLASH 32GBIT PARALLEL DIE
IC FLASH 64M SPI 75MHZ 16SO
SLC 32G DIE 4GX8
IC FLASH 64M SPI 75MHZ 16SO
SLC 32G DIE 4GX8
The three parts on the right have similar specifications to MT29F32G08ABEABM73A3WC1P.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyVoltage - SupplyInterfaceMemory SizeMemory TypeMemory FormatMemory InterfaceRoHS StatusSeriesClock FrequencyFactory Lead TimeSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F32G08ABEABM73A3WC1PSurface MountDieDie0°C~70°C TABulk2016Obsolete3 (168 Hours)70°C0°CFLASH - NAND2.7V~3.6VParallel32Gb 4G x 8Non-VolatileFLASHParallelROHS3 Compliant------------------------
-
Surface Mount162-VFBGA--40°C~105°C TATape & Reel (TR)-Last Time Buy3 (168 Hours)--FLASH - NAND, Mobile LPDRAM1.7V~1.9V-4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-VolatileFLASH, RAMParallelROHS3 CompliantAutomotive, AEC-Q100533MHz---------------------
-
Surface Mount130-VFBGA--40°C~85°C TATray-Active---FLASH - NAND, Mobile LPDRAM1.7V~1.95V-1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-VolatileFLASH, RAMParallelRoHS Compliant-200MHz16 WeeksYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
Surface Mount162-VFBGA--40°C~85°C TATray-Last Time Buy3 (168 Hours)--FLASH - NAND, Mobile LPDRAM1.7V~1.9V-4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-VolatileFLASH, RAMParallel--533MHz---------------------
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