Micron Technology Inc. MT29F2G16ABAEAWP-AIT:E TR
- Part Number:
- MT29F2G16ABAEAWP-AIT:E TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3233164-MT29F2G16ABAEAWP-AIT:E TR
- Description:
- IC FLASH 2GBIT 48TSOP
- ECAD Model:
-
- Datasheet:
- MT29F2G16ABAEAWP-AIT:E TR
Micron Technology Inc. MT29F2G16ABAEAWP-AIT:E TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F2G16ABAEAWP-AIT:E TR.
- Factory Lead Time5 Weeks
- Mounting TypeSurface Mount
- Package / Case48-TFSOP (0.724, 18.40mm Width)
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.5mm
- JESD-30 CodeR-PDSO-G48
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size2Gb 128M x 16
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization128MX16
- Memory Width16
- Memory Density2147483648 bit
- Programming Voltage3.3V
- Height Seated (Max)1.2mm
- Length18.4mm
- Width12mm
- RoHS StatusROHS3 Compliant
MT29F2G16ABAEAWP-AIT:E TR Overview
The product is designed for surface mounting and is currently in active production. It has 48 terminations and requires a voltage supply of 2.7V to 3.6V. The terminal position is dual and it follows the JESD-30 code of R-PDSO-G48. This memory device is non-volatile and uses the FLASH format with a density of 2147483648 bits. It is also compliant with the RoHS3 regulations.
MT29F2G16ABAEAWP-AIT:E TR Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
MT29F2G16ABAEAWP-AIT:E TR Applications
There are a lot of Micron Technology Inc.
MT29F2G16ABAEAWP-AIT:E TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The product is designed for surface mounting and is currently in active production. It has 48 terminations and requires a voltage supply of 2.7V to 3.6V. The terminal position is dual and it follows the JESD-30 code of R-PDSO-G48. This memory device is non-volatile and uses the FLASH format with a density of 2147483648 bits. It is also compliant with the RoHS3 regulations.
MT29F2G16ABAEAWP-AIT:E TR Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
MT29F2G16ABAEAWP-AIT:E TR Applications
There are a lot of Micron Technology Inc.
MT29F2G16ABAEAWP-AIT:E TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MT29F2G16ABAEAWP-AIT:E TR More Descriptions
Active DUAL Non-Volatile ASYNCHRONOUS ic memory -40C~85C TA 2.7V 2147483648bit 12mm
SLC NAND Flash Parallel 3.3V 2Gbit 128M X 16bit 48-Pin TSOP T/R
NAND Flash SLC 2G 128MX16 TSOP
IC FLASH 2GBIT PARALLEL 48TSOP I
IC REG BUCK ADJ/PROG 1.2A 10TDFN
SLC NAND Flash Parallel 3.3V 2Gbit 128M X 16bit 48-Pin TSOP T/R
NAND Flash SLC 2G 128MX16 TSOP
IC FLASH 2GBIT PARALLEL 48TSOP I
IC REG BUCK ADJ/PROG 1.2A 10TDFN
The three parts on the right have similar specifications to MT29F2G16ABAEAWP-AIT:E TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusSeriesClock FrequencyAdditional FeaturePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)View Compare
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MT29F2G16ABAEAWP-AIT:E TR5 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)48FLASH - NAND2.7V~3.6VDUAL13.3V0.5mmR-PDSO-G483.6V2.7V2Gb 128M x 16Non-VolatileASYNCHRONOUSFLASHParallel128MX16162147483648 bit3.3V1.2mm18.4mm12mmROHS3 Compliant------- -
-Surface Mount162-VFBGA--40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)-FLASH - NAND, Mobile LPDRAM1.7V~1.9V-------4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile-FLASH, RAMParallel-------ROHS3 CompliantAutomotive, AEC-Q100533MHz----
-
16 WeeksSurface Mount130-VFBGAYES-40°C~85°C TATrayActive-130FLASH - NAND, Mobile LPDRAM1.7V~1.95VBOTTOM11.8V0.65mmR-PBGA-B1301.95V1.7V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-VolatileSYNCHRONOUSFLASH, RAMParallel128MX881073741824 bit-1mm9mm8mmRoHS Compliant-200MHzLPDRAM IS ORGANISED AS 32M X 16NOT SPECIFIEDcompliantNOT SPECIFIED
-
-Surface Mount162-VFBGA--40°C~85°C TATrayLast Time Buy3 (168 Hours)-FLASH - NAND, Mobile LPDRAM1.7V~1.9V-------4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile-FLASH, RAMParallel---------533MHz----
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
-
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