Micron Technology Inc. MT29F256G08CJAAAWP-ITZ:A
- Part Number:
- MT29F256G08CJAAAWP-ITZ:A
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3236728-MT29F256G08CJAAAWP-ITZ:A
- Description:
- IC FLASH 256GBIT 48TSOP
- Datasheet:
- MT29F256G08CJAAAWP-ITZ:A
Micron Technology Inc. MT29F256G08CJAAAWP-ITZ:A technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F256G08CJAAAWP-ITZ:A.
- Factory Lead Time5 Weeks
- Mounting TypeSurface Mount
- Package / Case48-TFSOP (0.724, 18.40mm Width)
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- ECCN Code3A991.B.1.A
- Terminal FinishMATTE TIN
- HTS Code8542.32.00.51
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.5mm
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count48
- JESD-30 CodeR-PDSO-G48
- Operating Supply Voltage3.3V
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size256Gb 32G x 8
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization32GX8
- Memory Width8
- Memory Density274877906944 bit
- Programming Voltage2.7V
- Height Seated (Max)1.2mm
- Length18.4mm
- Width12mm
- RoHS StatusROHS3 Compliant
MT29F256G08CJAAAWP-ITZ:A Overview
The package or case for this particular electronic component is a 48-TFSOP with dimensions of 0.724 inches and a width of 18.40mm. It is compliant with the JESD-609 code, denoting its quality and reliability. The Moisture Sensitivity Level (MSL) for this component is 3, meaning it can withstand a maximum of 168 hours in a high humidity environment without being damaged. The voltage supply range for this component is 2.7V to 3.6V, making it suitable for a variety of applications. It can handle a peak reflow temperature of 260 degrees Celsius and has a terminal pitch of 0.5mm. The memory format is FLASH and it has a memory density of 274877906944 bits. The programming voltage required is 2.7V and the length of the component is 18.4mm.
MT29F256G08CJAAAWP-ITZ:A Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
Operating Supply Voltage:3.3V
MT29F256G08CJAAAWP-ITZ:A Applications
There are a lot of Micron Technology Inc.
MT29F256G08CJAAAWP-ITZ:A Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
The package or case for this particular electronic component is a 48-TFSOP with dimensions of 0.724 inches and a width of 18.40mm. It is compliant with the JESD-609 code, denoting its quality and reliability. The Moisture Sensitivity Level (MSL) for this component is 3, meaning it can withstand a maximum of 168 hours in a high humidity environment without being damaged. The voltage supply range for this component is 2.7V to 3.6V, making it suitable for a variety of applications. It can handle a peak reflow temperature of 260 degrees Celsius and has a terminal pitch of 0.5mm. The memory format is FLASH and it has a memory density of 274877906944 bits. The programming voltage required is 2.7V and the length of the component is 18.4mm.
MT29F256G08CJAAAWP-ITZ:A Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
Operating Supply Voltage:3.3V
MT29F256G08CJAAAWP-ITZ:A Applications
There are a lot of Micron Technology Inc.
MT29F256G08CJAAAWP-ITZ:A Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
MT29F256G08CJAAAWP-ITZ:A More Descriptions
MLC NAND Flash Parallel 3.3V 256Gbit 32G x 8Bit 20ns 48-Pin TSOP-I
L74A NAND FLASH 32GX8 PLASTIC PBF TSOP 3.3V MASS STORAGE
NAND Flash_MLC NAND Flash, 256Gb, 3.3V, 48-pin TSOP, RoHSMicron SCT
NAND FLASH, DENSITY 256 GB, VOLTAGE 3.3V
IC FLASH 256G PARALLEL 48TSOP I
Product Description Demo for Development.
L74A NAND FLASH 32GX8 PLASTIC PBF TSOP 3.3V MASS STORAGE
NAND Flash_MLC NAND Flash, 256Gb, 3.3V, 48-pin TSOP, RoHSMicron SCT
NAND FLASH, DENSITY 256 GB, VOLTAGE 3.3V
IC FLASH 256G PARALLEL 48TSOP I
Product Description Demo for Development.
The three parts on the right have similar specifications to MT29F256G08CJAAAWP-ITZ:A.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusSeriesClock FrequencyAdditional FeatureReach Compliance CodeView Compare
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MT29F256G08CJAAAWP-ITZ:A5 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES-40°C~85°C TATubee3yesObsolete3 (168 Hours)483A991.B.1.AMATTE TIN8542.32.00.51FLASH - NAND2.7V~3.6VDUAL26013.3V0.5mm3048R-PDSO-G483.3V3.6V2.7V256Gb 32G x 8Non-VolatileASYNCHRONOUSFLASHParallel32GX88274877906944 bit2.7V1.2mm18.4mm12mmROHS3 Compliant-----
-
-Surface Mount162-VFBGA--40°C~105°C TATape & Reel (TR)--Last Time Buy3 (168 Hours)----FLASH - NAND, Mobile LPDRAM1.7V~1.9V-----------4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile-FLASH, RAMParallel-------ROHS3 CompliantAutomotive, AEC-Q100533MHz--
-
16 WeeksSurface Mount130-VFBGAYES-40°C~85°C TATray--Active-130---FLASH - NAND, Mobile LPDRAM1.7V~1.95VBOTTOMNOT SPECIFIED11.8V0.65mmNOT SPECIFIED-R-PBGA-B130-1.95V1.7V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-VolatileSYNCHRONOUSFLASH, RAMParallel128MX881073741824 bit-1mm9mm8mmRoHS Compliant-200MHzLPDRAM IS ORGANISED AS 32M X 16compliant
-
-Surface Mount162-VFBGA--40°C~85°C TATray--Last Time Buy3 (168 Hours)----FLASH - NAND, Mobile LPDRAM1.7V~1.9V-----------4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile-FLASH, RAMParallel---------533MHz--
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