Micron Technology Inc. MT29F1T08CMCBBJ4-37ES:B TR
- Part Number:
- MT29F1T08CMCBBJ4-37ES:B TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3237025-MT29F1T08CMCBBJ4-37ES:B TR
- Description:
- IC FLASH 1TBIT 267MHZ 132VBGA
- Datasheet:
- MT29F1T08CMCBBJ4-37ES:B TR
Micron Technology Inc. MT29F1T08CMCBBJ4-37ES:B TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F1T08CMCBBJ4-37ES:B TR.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / Case132-VBGA
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- Memory Size1Tb 128G x 8
- Memory TypeNon-Volatile
- Clock Frequency267MHz
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F1T08CMCBBJ4-37ES:B TR Overview
This product features a 132-VBGA package/case, making it compact and suitable for a variety of applications. With an operating temperature range of 0°C to 70°C TA, it can withstand harsh environments. The packaging is in tape and reel (TR) form, ensuring easy handling and protection during transportation. This product is currently active and has a moisture sensitivity level (MSL) of 3, allowing it to be stored for up to 168 hours. It utilizes FLASH - NAND technology, providing high-speed data transfer and reliability. The voltage supply range of 2.7V to 3.6V makes it energy-efficient. This non-volatile memory type has a clock frequency of 267MHz and a parallel memory interface, making it suitable for a wide range of memory applications.
MT29F1T08CMCBBJ4-37ES:B TR Features
Package / Case: 132-VBGA
MT29F1T08CMCBBJ4-37ES:B TR Applications
There are a lot of Micron Technology Inc.
MT29F1T08CMCBBJ4-37ES:B TR Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
This product features a 132-VBGA package/case, making it compact and suitable for a variety of applications. With an operating temperature range of 0°C to 70°C TA, it can withstand harsh environments. The packaging is in tape and reel (TR) form, ensuring easy handling and protection during transportation. This product is currently active and has a moisture sensitivity level (MSL) of 3, allowing it to be stored for up to 168 hours. It utilizes FLASH - NAND technology, providing high-speed data transfer and reliability. The voltage supply range of 2.7V to 3.6V makes it energy-efficient. This non-volatile memory type has a clock frequency of 267MHz and a parallel memory interface, making it suitable for a wide range of memory applications.
MT29F1T08CMCBBJ4-37ES:B TR Features
Package / Case: 132-VBGA
MT29F1T08CMCBBJ4-37ES:B TR Applications
There are a lot of Micron Technology Inc.
MT29F1T08CMCBBJ4-37ES:B TR Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
MT29F1T08CMCBBJ4-37ES:B TR More Descriptions
IC FLASH 1G PARALLEL 64LBGA
IC FLASH 1TBIT PAR 132VBGA
IC FLASH 1T PARALLEL 267MHZ
IC FLASH 1TBIT PAR 132VBGA
IC FLASH 1T PARALLEL 267MHZ
The three parts on the right have similar specifications to MT29F1T08CMCBBJ4-37ES:B TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusSeriesSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F1T08CMCBBJ4-37ES:B TR12 WeeksSurface Mount132-VBGA0°C~70°C TATape & Reel (TR)Active3 (168 Hours)FLASH - NAND2.7V~3.6V1Tb 128G x 8Non-Volatile267MHzFLASHParallelROHS3 Compliant----------------------
-
-Surface Mount162-VFBGA-40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallelROHS3 CompliantAutomotive, AEC-Q100--------------------
-
16 WeeksSurface Mount130-VFBGA-40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-Volatile200MHzFLASH, RAMParallelRoHS Compliant-YES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
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-Surface Mount162-VFBGA-40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel----------------------
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