Micron Technology Inc. MT29F1G16ABBEAHC-AIT:E TR
- Part Number:
- MT29F1G16ABBEAHC-AIT:E TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3233220-MT29F1G16ABBEAHC-AIT:E TR
- Description:
- IC FLASH 1GBIT 25NS 63VFBGA
- Datasheet:
- MT29F1G16ABBEAHC-AIT:E TR
Micron Technology Inc. MT29F1G16ABBEAHC-AIT:E TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F1G16ABBEAHC-AIT:E TR.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / Case63-VFBGA
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply1.7V~1.95V
- Memory Size1Gb 64M x 16
- Memory TypeNon-Volatile
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F1G16ABBEAHC-AIT:E TR Overview
This product features a Surface Mount mounting type and a 63-VFBGA package/case. It is packaged in Tape & Reel (TR) and is currently in Active status. The Moisture Sensitivity Level (MSL) is 3, with a rating of 168 Hours. The voltage supply for this product ranges from 1.7V to 1.95V. It is a Non-Volatile memory type with a FLASH memory format. The memory interface is Parallel, and the product is ROHS3 Compliant.
MT29F1G16ABBEAHC-AIT:E TR Features
Package / Case: 63-VFBGA
MT29F1G16ABBEAHC-AIT:E TR Applications
There are a lot of Micron Technology Inc.
MT29F1G16ABBEAHC-AIT:E TR Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
This product features a Surface Mount mounting type and a 63-VFBGA package/case. It is packaged in Tape & Reel (TR) and is currently in Active status. The Moisture Sensitivity Level (MSL) is 3, with a rating of 168 Hours. The voltage supply for this product ranges from 1.7V to 1.95V. It is a Non-Volatile memory type with a FLASH memory format. The memory interface is Parallel, and the product is ROHS3 Compliant.
MT29F1G16ABBEAHC-AIT:E TR Features
Package / Case: 63-VFBGA
MT29F1G16ABBEAHC-AIT:E TR Applications
There are a lot of Micron Technology Inc.
MT29F1G16ABBEAHC-AIT:E TR Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
MT29F1G16ABBEAHC-AIT:E TR More Descriptions
IC FLASH 1GBIT PARALLEL 63VFBGA
IC EEPROM 16K PARALLEL 24SOIC
IC EEPROM 16K PARALLEL 24SOIC
The three parts on the right have similar specifications to MT29F1G16ABBEAHC-AIT:E TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeMemory FormatMemory InterfaceRoHS StatusSeriesClock FrequencySurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F1G16ABBEAHC-AIT:E TR12 WeeksSurface Mount63-VFBGA-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)FLASH - NAND1.7V~1.95V1Gb 64M x 16Non-VolatileFLASHParallelROHS3 Compliant-----------------------
-
-Surface Mount162-VFBGA-40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-VolatileFLASH, RAMParallelROHS3 CompliantAutomotive, AEC-Q100533MHz--------------------
-
16 WeeksSurface Mount130-VFBGA-40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-VolatileFLASH, RAMParallelRoHS Compliant-200MHzYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
-Surface Mount162-VFBGA-40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-VolatileFLASH, RAMParallel--533MHz--------------------
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