Micron Technology Inc. MT29F1G16ABBDAH4:D
- Part Number:
- MT29F1G16ABBDAH4:D
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3232048-MT29F1G16ABBDAH4:D
- Description:
- IC FLASH 1GBIT 25NS 63VFBGA
- Datasheet:
- MT29F1G16ABBDAH4:D
Micron Technology Inc. MT29F1G16ABBDAH4:D technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F1G16ABBDAH4:D.
- Factory Lead Time3 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case63-VFBGA
- Number of Pins63
- Operating Temperature0°C~70°C TA
- PackagingBulk
- Published2012
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations63
- TechnologyFLASH - NAND
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Base Part NumberMT29F1G16
- Operating Supply Voltage1.8V
- Supply Voltage-Max (Vsup)1.95V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size1Gb 64M x 16
- Nominal Supply Current20mA
- Memory TypeNon-Volatile
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization64MX16
- Memory Width16
- Address Bus Width27b
- Density1 Gb
- Standby Current-Max0.00005A
- Access Time (Max)25 ns
- Sync/AsyncAsynchronous
- Word Size16b
- Data PollingNO
- Toggle BitNO
- Command User InterfaceYES
- Number of Sectors/Size1K
- Sector Size64K
- Page Size1Kwords
- Ready/BusyYES
- Height Seated (Max)1mm
- Length11mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MT29F1G16ABBDAH4:D Overview
This product is a surface mount component that is packaged in bulk. The terminal position is located at the bottom of the component. The minimum supply voltage required for this product is 1.7V and the nominal supply current is 20mA. It has a density of 1 Gb and a capacity of 1K sectors. The component has a ready/busy indicator and is not radiation hardened. It is compliant with ROHS3 regulations.
MT29F1G16ABBDAH4:D Features
Package / Case: 63-VFBGA
63 Pins
Operating Supply Voltage:1.8V
MT29F1G16ABBDAH4:D Applications
There are a lot of Micron Technology Inc.
MT29F1G16ABBDAH4:D Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
This product is a surface mount component that is packaged in bulk. The terminal position is located at the bottom of the component. The minimum supply voltage required for this product is 1.7V and the nominal supply current is 20mA. It has a density of 1 Gb and a capacity of 1K sectors. The component has a ready/busy indicator and is not radiation hardened. It is compliant with ROHS3 regulations.
MT29F1G16ABBDAH4:D Features
Package / Case: 63-VFBGA
63 Pins
Operating Supply Voltage:1.8V
MT29F1G16ABBDAH4:D Applications
There are a lot of Micron Technology Inc.
MT29F1G16ABBDAH4:D Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MT29F1G16ABBDAH4:D More Descriptions
SLC NAND Flash Parallel 1.8V 1Gbit 64M x 16bit 63-Pin VFBGA Tray
M68A NAND FLASH 64MX16 PLASTIC VFBGA 1.8V MASS STORAGE
IC FLASH 1GBIT PARALLEL 63VFBGA
M68A NAND FLASH 64MX16 PLASTIC VFBGA 1.8V MASS STORAGE
IC FLASH 1GBIT PARALLEL 63VFBGA
The three parts on the right have similar specifications to MT29F1G16ABBDAH4:D.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchBase Part NumberOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNominal Supply CurrentMemory TypeMemory FormatMemory InterfaceOrganizationMemory WidthAddress Bus WidthDensityStandby Current-MaxAccess Time (Max)Sync/AsyncWord SizeData PollingToggle BitCommand User InterfaceNumber of Sectors/SizeSector SizePage SizeReady/BusyHeight Seated (Max)LengthRadiation HardeningRoHS StatusLead FreeSeriesClock FrequencySurface MountAdditional FeaturePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeOperating ModeMemory DensityWidthView Compare
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MT29F1G16ABBDAH4:D3 WeeksSurface MountSurface Mount63-VFBGA630°C~70°C TABulk2012Obsolete3 (168 Hours)63FLASH - NAND1.7V~1.95VBOTTOM11.8V0.8mmMT29F1G161.8V1.95V1.7V1Gb 64M x 1620mANon-VolatileFLASHParallel64MX161627b1 Gb0.00005A25 nsAsynchronous16bNONOYES1K64K1KwordsYES1mm11mmNoROHS3 CompliantLead Free------------
-
--Surface Mount162-VFBGA--40°C~105°C TATape & Reel (TR)-Last Time Buy3 (168 Hours)-FLASH - NAND, Mobile LPDRAM1.7V~1.9V--------4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2-Non-VolatileFLASH, RAMParallel------------------ROHS3 Compliant-Automotive, AEC-Q100533MHz---------
-
16 Weeks-Surface Mount130-VFBGA--40°C~85°C TATray-Active-130FLASH - NAND, Mobile LPDRAM1.7V~1.95VBOTTOM11.8V0.65mm--1.95V1.7V1Gb 128M x 8 N 512M 16M x 32 LPDRAM-Non-VolatileFLASH, RAMParallel128MX88-------------1mm9mm-RoHS Compliant--200MHzYESLPDRAM IS ORGANISED AS 32M X 16NOT SPECIFIEDcompliantNOT SPECIFIEDR-PBGA-B130SYNCHRONOUS1073741824 bit8mm
-
--Surface Mount162-VFBGA--40°C~85°C TATray-Last Time Buy3 (168 Hours)-FLASH - NAND, Mobile LPDRAM1.7V~1.9V--------4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2-Non-VolatileFLASH, RAMParallel---------------------533MHz---------
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