Micron Technology Inc. MT29F1G08ABAEAWP:E

Name: MT29F1G08ABAEAWP:E
Brand: Micron Technology Inc.
SKU: 3718232-MT29F1G08ABAEAWP:E
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MT29F1G08ABAEAWP:E

Manufacturer:: Micron Technology Inc.

Ventron No:: 3718232-MT29F1G08ABAEAWP:E

Description:: IC FLASH 1GBIT 20NS 48TSOP

ECAD Model:

Datasheet:: MT29F1G08ABAEAWP:E

Specifications

Micron Technology Inc. MT29F1G08ABAEAWP:E technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F1G08ABAEAWP:E.

Factory Lead Time
6 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
48-TFSOP (0.724, 18.40mm Width)
Number of Pins
48
Operating Temperature
0°C~70°C TA
Packaging
Tray
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
48
ECCN Code
3A991.B.1.A
Terminal Finish
MATTE TIN
HTS Code
8542.32.00.51
Technology
FLASH - NAND
Voltage - Supply
2.7V~3.6V
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Number of Functions
1
Supply Voltage
3.3V
Terminal Pitch
0.5mm
Reflow Temperature-Max (s)
30
Base Part Number
MT29F1G08
Operating Supply Voltage
3.3V
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
1Gb 128M x 8
Nominal Supply Current
35mA
Memory Type
Non-Volatile
Memory Format
FLASH
Memory Interface
Parallel
Organization
128MX8
Memory Width
8
Address Bus Width
28b
Density
1 Gb
Sync/Async
Asynchronous
Word Size
8b
Programming Voltage
2.7V
Page Size
2kB
Height Seated (Max)
1.2mm
Length
18.4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

MT29F1G08ABAEAWP:E Overview
The number of terminations for this particular electronic component is 48, providing a sturdy and reliable connection for seamless integration into any circuit. The terminal finish is a matte tin, ensuring a smooth surface for efficient soldering during assembly. With an HTS code of 8542.32.00.51, this component falls under the category of "Electronic Integrated Circuits." Its peak reflow temperature is 260 degrees Celsius, allowing for safe and effective soldering without causing damage to the component. Additionally, this component has a maximum reflow temperature of 30 seconds and a supply voltage of 3.6V. Its memory size is 1Gb 128M x 8, and its organization is 128MX8, providing ample storage capacity for various data and functions. Finally, with a maximum seated height of only 1.2mm, this component is compact and space-saving.

MT29F1G08ABAEAWP:E Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
48 Pins
Operating Supply Voltage:3.3V

MT29F1G08ABAEAWP:E Applications
There are a lot of Micron Technology Inc. MT29F1G08ABAEAWP:E Memory applications.

embedded logic
servers
personal digital assistants
Camcorders
mainframes
printers
nonvolatile BIOS memory
supercomputers
graphics card
main computer memory

MT29F1G08ABAEAWP:E More Descriptions

SLC NAND Flash Parallel 3.3V 1G-bit 128M x 8 48-Pin TSOP-I / IC FLASH 1GBIT 20NS 48TSOP
M68M 128MX8 NAND FLASH PLASTIC TSOP 3.3V ASYNCH/PAGE READ MASS STORAGE
Flash Memory, 1Gbit, 0 To 70Deg C; Flash Memory Type:Slc Nand; Memory Configuration:128M X 8Bit; Interfaces:Parallel; Ic Case/Package:Tsop-I; No. Of Pins:48Pins; Clock Frequency Max:50Mhz; Access Time:16Ns; Supply Voltage Min:2.7V Rohs Compliant: Yes |Micron MT29F1G08ABAEAWP:E

Product Comparison

The three parts on the right have similar specifications to MT29F1G08ABAEAWP:E.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reflow Temperature-Max (s)

Base Part Number

Operating Supply Voltage

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Nominal Supply Current

Memory Type

Memory Format

Memory Interface

Organization

Memory Width

Address Bus Width

Density

Sync/Async

Word Size

Programming Voltage

Page Size

Height Seated (Max)

Length

Radiation Hardening

RoHS Status

Series

Clock Frequency

Surface Mount

Additional Feature

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Operating Mode

Memory Density

Width

View Compare
MT29F1G08ABAEAWP:E

Micron Technology Inc.

6 Weeks

Surface Mount

Surface Mount

48-TFSOP (0.724, 18.40mm Width)

48

0°C~70°C TA

Tray

2013

e3

Active

3 (168 Hours)

48

3A991.B.1.A

MATTE TIN

8542.32.00.51

FLASH - NAND

2.7V~3.6V

DUAL

260

1

3.3V

0.5mm

30

MT29F1G08

3.3V

3.6V

2.7V

1Gb 128M x 8

35mA

Non-Volatile

FLASH

Parallel

128MX8

8

28b

1 Gb

Asynchronous

8b

2.7V

2kB

1.2mm

18.4mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-
MT29AZ5A3CHHWD-18AAT.84F TR

Micron Technology Inc.

-

-

Surface Mount

162-VFBGA

-

-40°C~105°C TA

Tape & Reel (TR)

-

-

Last Time Buy

3 (168 Hours)

-

-

-

-

FLASH - NAND, Mobile LPDRAM

1.7V~1.9V

-

-

-

-

-

-

-

-

-

-

4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2

-

Non-Volatile

FLASH, RAM

Parallel

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Automotive, AEC-Q100

533MHz

-

-

-

-

-

-

-

-

MT29F1G08ABAEAWP:E vs MT29AZ5A3CHHWD-18AAT.84F TR
MT29C1G12MAAIYAMR-5 AIT

Micron Technology Inc.

16 Weeks

-

Surface Mount

130-VFBGA

-

-40°C~85°C TA

Tray

-

-

Active

-

130

-

-

-

FLASH - NAND, Mobile LPDRAM

1.7V~1.95V

BOTTOM

NOT SPECIFIED

1

1.8V

0.65mm

-

-

-

1.95V

1.7V

1Gb 128M x 8 N 512M 16M x 32 LPDRAM

-

Non-Volatile

FLASH, RAM

Parallel

128MX8

8

-

-

-

-

-

-

1mm

9mm

-

RoHS Compliant

-

200MHz

YES

LPDRAM IS ORGANISED AS 32M X 16

compliant

NOT SPECIFIED

R-PBGA-B130

SYNCHRONOUS

1073741824 bit

8mm

MT29F1G08ABAEAWP:E vs MT29C1G12MAAIYAMR-5 AIT
MT29AZ5A3CHHWD-18AIT.84F

Micron Technology Inc.

-

-

Surface Mount

162-VFBGA

-

-40°C~85°C TA

Tray

-

-

Last Time Buy

3 (168 Hours)

-

-

-

-

FLASH - NAND, Mobile LPDRAM

1.7V~1.9V

-

-

-

-

-

-

-

-

-

-

4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2

-

Non-Volatile

FLASH, RAM

Parallel

-

-

-

-

-

-

-

-

-

-

-

-

-

533MHz

-

-

-

-

-

-

-

-

MT29F1G08ABAEAWP:E vs MT29AZ5A3CHHWD-18AIT.84F