Micron Technology Inc. MT29F1G01ABAFDSF-AAT:F TR
- Part Number:
- MT29F1G01ABAFDSF-AAT:F TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3229984-MT29F1G01ABAFDSF-AAT:F TR
- Description:
- IC FLASH 1GBIT 16SO
- Datasheet:
- MT29F1G01ABAFDSF-AAT:F TR
Micron Technology Inc. MT29F1G01ABAFDSF-AAT:F TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F1G01ABAFDSF-AAT:F TR.
- Factory Lead Time5 Weeks
- Mounting TypeSurface Mount
- Package / Case16-SOIC (0.295, 7.50mm Width)
- Operating Temperature-40°C~105°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- Memory Size1Gb 1G x 1
- Memory TypeNon-Volatile
- Memory FormatFLASH
- Memory InterfaceSPI
- RoHS StatusROHS3 Compliant
MT29F1G01ABAFDSF-AAT:F TR Overview
The mounting type for this particular electronic component is surface mount, meaning it can be easily mounted onto a surface rather than being inserted into a socket. It has a wide operating temperature range of -40°C to 105°C TA, making it suitable for use in various environments. The packaging for this component is tape and reel, which is a method of packaging that allows for efficient handling and transportation. It has a moisture sensitivity level of 3, which means it can withstand 168 hours of exposure to moisture without being damaged. The technology used in this component is FLASH - NAND, which is a type of non-volatile memory. It requires a voltage supply of 2.7V to 3.6V and has a memory size of 1Gb 1G x 1. The memory format is FLASH and it has a SPI interface. Additionally, this component is ROHS3 compliant, meaning it meets the standards for being environmentally friendly.
MT29F1G01ABAFDSF-AAT:F TR Features
Package / Case: 16-SOIC (0.295, 7.50mm Width)
MT29F1G01ABAFDSF-AAT:F TR Applications
There are a lot of Micron Technology Inc.
MT29F1G01ABAFDSF-AAT:F TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The mounting type for this particular electronic component is surface mount, meaning it can be easily mounted onto a surface rather than being inserted into a socket. It has a wide operating temperature range of -40°C to 105°C TA, making it suitable for use in various environments. The packaging for this component is tape and reel, which is a method of packaging that allows for efficient handling and transportation. It has a moisture sensitivity level of 3, which means it can withstand 168 hours of exposure to moisture without being damaged. The technology used in this component is FLASH - NAND, which is a type of non-volatile memory. It requires a voltage supply of 2.7V to 3.6V and has a memory size of 1Gb 1G x 1. The memory format is FLASH and it has a SPI interface. Additionally, this component is ROHS3 compliant, meaning it meets the standards for being environmentally friendly.
MT29F1G01ABAFDSF-AAT:F TR Features
Package / Case: 16-SOIC (0.295, 7.50mm Width)
MT29F1G01ABAFDSF-AAT:F TR Applications
There are a lot of Micron Technology Inc.
MT29F1G01ABAFDSF-AAT:F TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MT29F1G01ABAFDSF-AAT:F TR More Descriptions
Active Non-Volatile ROHS3Compliant SPI ic memory -40C~105C TA 2.7V~3.6V 1Gb 1G x 1
NAND Flash SLC 1G 1GX1 SOIC
IC FLASH 16M PARALLEL 40TSOP
OEMs, CMs ONLY (NO BROKERS)
MICMT29F1G01ABAFDSF-AAT:F TR
IC FLASH 1GBIT SPI 16SO
IC FLASH 1G SPI 16SOP
NAND Flash SLC 1G 1GX1 SOIC
IC FLASH 16M PARALLEL 40TSOP
OEMs, CMs ONLY (NO BROKERS)
MICMT29F1G01ABAFDSF-AAT:F TR
IC FLASH 1GBIT SPI 16SO
IC FLASH 1G SPI 16SOP
The three parts on the right have similar specifications to MT29F1G01ABAFDSF-AAT:F TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeMemory FormatMemory InterfaceRoHS StatusSeriesClock FrequencySurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
-
MT29F1G01ABAFDSF-AAT:F TR5 WeeksSurface Mount16-SOIC (0.295, 7.50mm Width)-40°C~105°C TATape & Reel (TR)Active3 (168 Hours)FLASH - NAND2.7V~3.6V1Gb 1G x 1Non-VolatileFLASHSPIROHS3 Compliant-----------------------
-
-Surface Mount162-VFBGA-40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-VolatileFLASH, RAMParallelROHS3 CompliantAutomotive, AEC-Q100533MHz--------------------
-
16 WeeksSurface Mount130-VFBGA-40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-VolatileFLASH, RAMParallelRoHS Compliant-200MHzYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
-Surface Mount162-VFBGA-40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-VolatileFLASH, RAMParallel--533MHz--------------------
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