Micron Technology Inc. MT29E512G08CKCBBH7-6:B TR
- Part Number:
- MT29E512G08CKCBBH7-6:B TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3255530-MT29E512G08CKCBBH7-6:B TR
- Description:
- IC FLASH 512GBIT 167MHZ 152TBGA
- Datasheet:
- MT29E512G08CKCBBH7-6:B TR
Micron Technology Inc. MT29E512G08CKCBBH7-6:B TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29E512G08CKCBBH7-6:B TR.
- Mounting TypeSurface Mount
- Supplier Device Package152-TBGA
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- Memory Size512Gb 64G x 8
- Memory TypeNon-Volatile
- Clock Frequency167MHz
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29E512G08CKCBBH7-6:B TR Overview
Non-Volatile is its memory type. It is available in a case with a Tape & Reel (TR) shape. There is an 512Gb 64G x 8 memory capacity on the chip. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 2.7V~3.6V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. With a clock frequency of 167MHz, the memory rotates on its own.
MT29E512G08CKCBBH7-6:B TR Features
The mounting type for this device is surface mount, making it suitable for easy installation on a surface. The supplier device package is 152-TBGA, indicating the type of packaging used for this device. The operating temperature range for this device is 0°C to 70°C, making it suitable for use in a variety of environments. However, it is important to note that this device is now obsolete. The technology used for this device is FLASH - NAND, which is a type of non-volatile memory. It requires a voltage supply of 2.7V to 3.6V to function properly. The memory size for this device is 512Gb, with 64G x 8 configuration. It uses a parallel memory interface and is formatted as FLASH.
MT29E512G08CKCBBH7-6:B TR Applications
There are a lot of Micron Technology Inc.
MT29E512G08CKCBBH7-6:B TR Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
Non-Volatile is its memory type. It is available in a case with a Tape & Reel (TR) shape. There is an 512Gb 64G x 8 memory capacity on the chip. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 2.7V~3.6V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. With a clock frequency of 167MHz, the memory rotates on its own.
MT29E512G08CKCBBH7-6:B TR Features
The mounting type for this device is surface mount, making it suitable for easy installation on a surface. The supplier device package is 152-TBGA, indicating the type of packaging used for this device. The operating temperature range for this device is 0°C to 70°C, making it suitable for use in a variety of environments. However, it is important to note that this device is now obsolete. The technology used for this device is FLASH - NAND, which is a type of non-volatile memory. It requires a voltage supply of 2.7V to 3.6V to function properly. The memory size for this device is 512Gb, with 64G x 8 configuration. It uses a parallel memory interface and is formatted as FLASH.
MT29E512G08CKCBBH7-6:B TR Applications
There are a lot of Micron Technology Inc.
MT29E512G08CKCBBH7-6:B TR Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
MT29E512G08CKCBBH7-6:B TR More Descriptions
IC FLASH 512GBIT 167MHZ 152TBGA
IC FLASH 1G PARALLEL 64LBGA
IC FLASH 512G PARALLEL 167MHZ
IC FLASH 1G PARALLEL 64LBGA
IC FLASH 512G PARALLEL 167MHZ
The three parts on the right have similar specifications to MT29E512G08CKCBBH7-6:B TR.
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ImagePart NumberManufacturerMounting TypeSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusPackage / CaseSeriesFactory Lead TimeSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29E512G08CKCBBH7-6:B TRSurface Mount152-TBGA0°C~70°C TATape & Reel (TR)Obsolete3 (168 Hours)FLASH - NAND2.7V~3.6V512Gb 64G x 8Non-Volatile167MHzFLASHParallelROHS3 Compliant------------------------
-
Surface Mount--40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallelROHS3 Compliant162-VFBGAAutomotive, AEC-Q100---------------------
-
Surface Mount--40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-Volatile200MHzFLASH, RAMParallelRoHS Compliant130-VFBGA-16 WeeksYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
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Surface Mount--40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel-162-VFBGA----------------------
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