Micron Technology Inc. MT29E1HT08ELHBBG1-3ES:B TR
- Part Number:
- MT29E1HT08ELHBBG1-3ES:B TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3237429-MT29E1HT08ELHBBG1-3ES:B TR
- Description:
- IC FLASH 1.5TBIT 272VBGA
- Datasheet:
- MT29E1HT08ELHBBG1-3ES:B TR
Micron Technology Inc. MT29E1HT08ELHBBG1-3ES:B TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29E1HT08ELHBBG1-3ES:B TR.
- Factory Lead Time12 Weeks
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply2.5V~3.6V
- Memory Size1.5Tb 192G x 8
- Memory TypeNon-Volatile
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29E1HT08ELHBBG1-3ES:B TR Overview
Non-Volatile is its memory type. It is available in a case with a Tape & Reel (TR) shape. There is an 1.5Tb 192G x 8 memory capacity on the chip. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 2.5V~3.6V is possible to be applied to the supply.
MT29E1HT08ELHBBG1-3ES:B TR Features
The product in question is a high-performance memory device designed for a wide range of applications. It has an operating temperature range of 0°C to 70°C, making it suitable for use in various environments. The packaging option available for this product is Tape & Reel (TR), ensuring efficient and secure handling during transportation and storage. This product is currently in the Active status, indicating its availability for purchase. With a Moisture Sensitivity Level (MSL) of 3 (168 Hours), it can withstand exposure to moisture for up to 168 hours. The voltage supply for this device ranges from 2.5V to 3.6V, providing flexibility in power management. It offers a memory size of 1.5Tb 192G x 8 and belongs to the Non-Volatile memory type. The memory format for this product is FLASH, and it operates on a parallel interface. It is also ROHS3 Compliant, ensuring its compliance with the latest environmental regulations.
MT29E1HT08ELHBBG1-3ES:B TR Applications
There are a lot of Micron Technology Inc.
MT29E1HT08ELHBBG1-3ES:B TR Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
Non-Volatile is its memory type. It is available in a case with a Tape & Reel (TR) shape. There is an 1.5Tb 192G x 8 memory capacity on the chip. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 2.5V~3.6V is possible to be applied to the supply.
MT29E1HT08ELHBBG1-3ES:B TR Features
The product in question is a high-performance memory device designed for a wide range of applications. It has an operating temperature range of 0°C to 70°C, making it suitable for use in various environments. The packaging option available for this product is Tape & Reel (TR), ensuring efficient and secure handling during transportation and storage. This product is currently in the Active status, indicating its availability for purchase. With a Moisture Sensitivity Level (MSL) of 3 (168 Hours), it can withstand exposure to moisture for up to 168 hours. The voltage supply for this device ranges from 2.5V to 3.6V, providing flexibility in power management. It offers a memory size of 1.5Tb 192G x 8 and belongs to the Non-Volatile memory type. The memory format for this product is FLASH, and it operates on a parallel interface. It is also ROHS3 Compliant, ensuring its compliance with the latest environmental regulations.
MT29E1HT08ELHBBG1-3ES:B TR Applications
There are a lot of Micron Technology Inc.
MT29E1HT08ELHBBG1-3ES:B TR Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
MT29E1HT08ELHBBG1-3ES:B TR More Descriptions
IC FLASH 1.5T PARALLEL 272VBGA
IC PCM 128M PARALLEL 64EASYBGA
IC FLASH 1.5TBIT PARALLEL
IC PCM 128M PARALLEL 64EASYBGA
IC FLASH 1.5TBIT PARALLEL
The three parts on the right have similar specifications to MT29E1HT08ELHBBG1-3ES:B TR.
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ImagePart NumberManufacturerFactory Lead TimeOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeMemory FormatMemory InterfaceRoHS StatusMounting TypePackage / CaseSeriesClock FrequencySurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29E1HT08ELHBBG1-3ES:B TR12 Weeks0°C~70°C TATape & Reel (TR)Active3 (168 Hours)FLASH - NAND2.5V~3.6V1.5Tb 192G x 8Non-VolatileFLASHParallelROHS3 Compliant-------------------------
-
--40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-VolatileFLASH, RAMParallelROHS3 CompliantSurface Mount162-VFBGAAutomotive, AEC-Q100533MHz--------------------
-
16 Weeks-40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-VolatileFLASH, RAMParallelRoHS CompliantSurface Mount130-VFBGA-200MHzYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
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--40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-VolatileFLASH, RAMParallel-Surface Mount162-VFBGA-533MHz--------------------
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