Micron Technology Inc. MT29C4G96MAZBACKD-5 WT
- Part Number:
- MT29C4G96MAZBACKD-5 WT
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3244634-MT29C4G96MAZBACKD-5 WT
- Description:
- IC FLASH/LPDRAM 8GBIT 137TFBGA
- ECAD Model:
-
- Datasheet:
- MT29C4G96MAZBACKD-5 WT
Micron Technology Inc. MT29C4G96MAZBACKD-5 WT technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29C4G96MAZBACKD-5 WT.
- Mounting TypeSurface Mount
- Package / Case137-TFBGA
- Surface MountYES
- Operating Temperature-25°C~85°C TA
- PackagingBulk
- Published2014
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations137
- Additional FeatureALSO ORGANISED AS 128M X 16
- HTS Code8542.32.00.71
- TechnologyFLASH - NAND, Mobile LPDRAM
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberMT29C4G96M
- JESD-30 CodeR-PBGA-B137
- Supply Voltage-Max (Vsup)1.95V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size4Gb 256M x 16 N 4Gb 128M x 32 LPDRAM
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency200MHz
- Memory FormatFLASH, RAM
- Memory InterfaceParallel
- Organization64MX32
- Memory Width32
- Memory Density2147483648 bit
- Length13mm
- Height Seated (Max)1.1mm
- Width10.5mm
- RoHS StatusROHS3 Compliant
MT29C4G96MAZBACKD-5 WT Overview
Its memory type can be classified as Non-Volatile. It comes in a Bulk. It is available in 137-TFBGA case. The memory size of the chip is 4Gb 256M x 16 N 4Gb 128M x 32 LPDRAM Mb. This device utilizes a FLASH, RAM format memory which is of mainstream design. With an extended designed operating temperature of -25°C~85°C TA, this device is capable of lots of demanding applications. It is supplied votage within 1.7V~1.95V. Its recommended mounting type is Surface Mount. 137 terminations are planted on the chip. This part supports as many as 1 functions for the comprehensive working procedure. This ic memory chip is designed to be supplied with 1.8V. The memory has a clock frequency rotation within 200MHz. MT29C4G96M, as the device's base part number, is frequently referred in order to select similar parts. In spite of all the merits this chip has, it also features ALSO ORGANISED AS 128M X 16 to level up system performance.
MT29C4G96MAZBACKD-5 WT Features
Package / Case: 137-TFBGA
Additional Feature:ALSO ORGANISED AS 128M X 16
MT29C4G96MAZBACKD-5 WT Applications
There are a lot of Micron Technology Inc.
MT29C4G96MAZBACKD-5 WT Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
Its memory type can be classified as Non-Volatile. It comes in a Bulk. It is available in 137-TFBGA case. The memory size of the chip is 4Gb 256M x 16 N 4Gb 128M x 32 LPDRAM Mb. This device utilizes a FLASH, RAM format memory which is of mainstream design. With an extended designed operating temperature of -25°C~85°C TA, this device is capable of lots of demanding applications. It is supplied votage within 1.7V~1.95V. Its recommended mounting type is Surface Mount. 137 terminations are planted on the chip. This part supports as many as 1 functions for the comprehensive working procedure. This ic memory chip is designed to be supplied with 1.8V. The memory has a clock frequency rotation within 200MHz. MT29C4G96M, as the device's base part number, is frequently referred in order to select similar parts. In spite of all the merits this chip has, it also features ALSO ORGANISED AS 128M X 16 to level up system performance.
MT29C4G96MAZBACKD-5 WT Features
Package / Case: 137-TFBGA
Additional Feature:ALSO ORGANISED AS 128M X 16
MT29C4G96MAZBACKD-5 WT Applications
There are a lot of Micron Technology Inc.
MT29C4G96MAZBACKD-5 WT Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
MT29C4G96MAZBACKD-5 WT More Descriptions
Combo Mem 256Mx16 NAND Flash 128Mx16 Mobile LPDDR SDRAM 1.8V 137-Pin VFBGA
Multichip Packages, NAND-Based MCP, 4Gb, LPDDR 4Gb, 1.7V-1.9V, 137-ball TFBGA, RoHSMicron SCT
J4X2 256MX16/128MX32 MCP PLASTIC WIRELESS TFBGA 1.8V
IC FLASH RAM 4GBIT PAR 137TFBGA
Multichip Packages, NAND-Based MCP, 4Gb, LPDDR 4Gb, 1.7V-1.9V, 137-ball TFBGA, RoHSMicron SCT
J4X2 256MX16/128MX32 MCP PLASTIC WIRELESS TFBGA 1.8V
IC FLASH RAM 4GBIT PAR 137TFBGA
The three parts on the right have similar specifications to MT29C4G96MAZBACKD-5 WT.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityLengthHeight Seated (Max)WidthRoHS StatusSeriesFactory Lead TimeReach Compliance CodeView Compare
-
MT29C4G96MAZBACKD-5 WTSurface Mount137-TFBGAYES-25°C~85°C TABulk2014Obsolete3 (168 Hours)137ALSO ORGANISED AS 128M X 168542.32.00.71FLASH - NAND, Mobile LPDRAM1.7V~1.95VBOTTOMNOT SPECIFIED11.8V0.8mmNOT SPECIFIEDMT29C4G96MR-PBGA-B1371.95V1.7V4Gb 256M x 16 N 4Gb 128M x 32 LPDRAMNon-VolatileSYNCHRONOUS200MHzFLASH, RAMParallel64MX32322147483648 bit13mm1.1mm10.5mmROHS3 Compliant---- -
Surface Mount162-VFBGA--40°C~105°C TATape & Reel (TR)-Last Time Buy3 (168 Hours)---FLASH - NAND, Mobile LPDRAM1.7V~1.9V----------4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile-533MHzFLASH, RAMParallel------ROHS3 CompliantAutomotive, AEC-Q100--
-
Surface Mount130-VFBGAYES-40°C~85°C TATray-Active-130LPDRAM IS ORGANISED AS 32M X 16-FLASH - NAND, Mobile LPDRAM1.7V~1.95VBOTTOMNOT SPECIFIED11.8V0.65mmNOT SPECIFIED-R-PBGA-B1301.95V1.7V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-VolatileSYNCHRONOUS200MHzFLASH, RAMParallel128MX881073741824 bit9mm1mm8mmRoHS Compliant-16 Weekscompliant
-
Surface Mount162-VFBGA--40°C~85°C TATray-Last Time Buy3 (168 Hours)---FLASH - NAND, Mobile LPDRAM1.7V~1.9V----------4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile-533MHzFLASH, RAMParallel----------
-
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
-
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
-
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
27 February 2024
LD7575PS Manufacturer, Advantages and Disadvantages and Other Details
Ⅰ. What is LD7575PS?Ⅱ. Pins and functions of LD7575PSⅢ. Manufacturer of LD7575PSⅣ. How does LD7575PS achieve stable output voltage?Ⅴ. Block diagram of LD7575PSⅥ. What is the performance of... -
27 February 2024
BQ32000DR Structure, Technical Parameters, Layout Guidelines and Applications
Ⅰ. Overview of BQ32000DRⅡ. Structure of BQ32000DRⅢ. Simplified schematic of BQ32000DRⅣ. Technical parameters of BQ32000DRⅤ. Layout guidelines for BQ32000DRⅥ. Where to use BQ32000DR?Ⅶ. How does the backup power... -
28 February 2024
An In-Depth Look at the TXS0108ERGYR: A Solution for Logic Level Conversion
Ⅰ. TXS0108ERGYR overviewⅡ. Specifications of TXS0108ERGYRⅢ. Recommended operating conditions of TXS0108ERGYRⅣ. Advantages of TXS0108ERGYRⅤ. Functional block diagram of TXSO108ERGYRⅥ. Application areas of TXS0108ERGYRⅦ. Wiring and circuit design of... -
28 February 2024
MAX232IDR Characteristics, Specifications, Application Fields and Working Principle
Ⅰ. Description of MAX232IDRⅡ. What are the characteristics of MAX232IDR?Ⅲ. Specifications of MAX232IDRⅣ. Parameter measurement information of MAX232IDRⅤ. Application fields of MAX232IDRⅥ. Application examples of MAX232IDRⅦ. How does...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.