Micron Technology Inc. MT16KSF51264HZ-1G4D1
- Part Number:
- MT16KSF51264HZ-1G4D1
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3322994-MT16KSF51264HZ-1G4D1
- Description:
- MODULE DDR3 SDRAM 4GB 204SODIMM
- Datasheet:
- MT16KSF_64HZ
Micron Technology Inc. MT16KSF51264HZ-1G4D1 technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT16KSF51264HZ-1G4D1.
- MountSocket
- Package / Case204-SODIMM
- Number of Pins204
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations204
- Max Operating Temperature70°C
- Min Operating Temperature0°C
- SubcategoryDRAMs
- TechnologyCMOS
- Terminal PositionDUAL
- Supply Voltage1.35V
- Terminal Pitch0.6mm
- Operating Supply Voltage1.35V
- Number of Elements16
- Temperature GradeCOMMERCIAL
- Max Supply Voltage1.45V
- Min Supply Voltage1.283V
- Memory Size4GB
- Speed1333MT/s
- Memory TypeDDR3 SDRAM
- Clock Frequency667MHz
- Organization512MX64
- Output Characteristics3-STATE
- Memory Width64
- Memory Density34359738368 bit
- Max Frequency1.333GHz
- I/O TypeCOMMON
- Refresh Cycles8192
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
Images are for reference only.See Product Specifications for product details.If you are interested to buy MT16KSF51264HZ-1G4D1.
MT16KSF51264HZ-1G4D1 More Descriptions
4GB PC3-10600 DDR3-1333MHz non-ECC Unbuffered CL9 204-Pin SoDIMM
DRAM Module DDR3 SDRAM 4Gbyte 204SODIMM Tray
V69A .4GB DDR3 SODIM
DRAM Module DDR3 SDRAM 4Gbyte 204SODIMM Tray
V69A .4GB DDR3 SODIM
The three parts on the right have similar specifications to MT16KSF51264HZ-1G4D1.
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ImagePart NumberManufacturerMountPackage / CaseNumber of PinsPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsMax Operating TemperatureMin Operating TemperatureSubcategoryTechnologyTerminal PositionSupply VoltageTerminal PitchOperating Supply VoltageNumber of ElementsTemperature GradeMax Supply VoltageMin Supply VoltageMemory SizeSpeedMemory TypeClock FrequencyOrganizationOutput CharacteristicsMemory WidthMemory DensityMax FrequencyI/O TypeRefresh CyclesRadiation HardeningRoHS StatusSurface MountTerminal FormReach Compliance CodeJESD-30 CodeQualification StatusOperating Temperature (Max)Power SuppliesSupply Current-MaxStandby Current-MaxAccess Time (Max)Additional FeatureNumber of FunctionsSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Number of PortsOperating ModeData Bus WidthAccess ModeHeight Seated (Max)LengthPackagingJESD-609 CodeECCN CodeTerminal FinishHTS CodePeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Pin CountAccess TimeHeightLead FreeView Compare
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MT16KSF51264HZ-1G4D1Socket204-SODIMM2042011Obsolete3 (168 Hours)20470°C0°CDRAMsCMOSDUAL1.35V0.6mm1.35V16COMMERCIAL1.45V1.283V4GB1333MT/sDDR3 SDRAM667MHz512MX643-STATE6434359738368 bit1.333GHzCOMMON8192NoROHS3 Compliant---------------------------------
-
-200-SODIMM-2002Obsolete1 (Unlimited)200--DRAMsCMOSDUAL2.6V0.6mm--COMMERCIAL--1GB400MT/sDDR SDRAM200MHz128MX643-STATE648589934592 bit-COMMON8192-Non-RoHS CompliantNONO LEADnot_compliantR-PDMA-N200Not Qualified70°C2.6V5.52mA0.08A0.7 ns----------------------
-
-204-SODIMM2042015Obsolete3 (168 Hours)20470°C0°C-CMOSZIG-ZAG1.35V---COMMERCIAL--8GB1866MT/sDDR3L SDRAM-1GX64-6468719476736 bit934.579MHz---ROHS3 CompliantNONO LEADunknown-------SELF REFRESH; WD-MAX11.45V1.283V1SYNCHRONOUS64bDUAL BANK PAGE BURST30.15mm67.6mm------------
-
Socket200-SODIMM2002002Obsolete1 (Unlimited)20070°C0°CDRAMsCMOSDUAL2.5V0.6mm2.5V16COMMERCIAL2.7V2.3V1GB-DDR SDRAM-128MX643-STATE648589934592 bit-COMMON8192-Non-RoHS Compliant-NO LEADnot_compliant-Not Qualified--3.28mA0.08A-AUTO/SELF REFRESH1--1SYNCHRONOUS----Bulke0EAR99TIN LEAD8542.32.00.36235167MHz30200167 μs38.1mmContains Lead
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