Microsemi Corporation MS1076
- Part Number:
- MS1076
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3585034-MS1076
- Description:
- TRANS RF BIPO 320W 16A M174
- Datasheet:
- MS1076
Microsemi Corporation MS1076 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation MS1076.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- MountChassis Mount, Screw
- Mounting TypeChassis Mount
- Package / CaseM174
- Number of Pins4
- Supplier Device PackageM174
- Operating Temperature200°C TJ
- PackagingBulk
- Published2003
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- Max Power Dissipation320W
- Power - Max320W
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)35V
- Max Collector Current16A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 7A 5V
- Collector Emitter Breakdown Voltage35V
- Gain12dB
- Voltage - Collector Emitter Breakdown (Max)35V
- Current - Collector (Ic) (Max)16A
- Frequency - Transition30MHz
- Collector Base Voltage (VCBO)70V
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
MS1076 Description
MS1076 developed by Microsemi Corporation is a type of 28-volt epitaxial NPN silicon planar transistor. It is specifically designed for SSB and VHF communications. Maximum ruggedness and reliability can be achieved based on an emitter-ballasted die geometry. Using planar structure and technology, very delicate and complex electrode patterns can be produced, thus opening up a broad way for transistors to develop in the direction of high frequency and high power.
MS1076 Features
Common emitter configuration Device current: 16A Power dissipation: 250W Junction temperature: -65℃~150℃
MS1076 Applications
SSB and VHF communications
MS1076 developed by Microsemi Corporation is a type of 28-volt epitaxial NPN silicon planar transistor. It is specifically designed for SSB and VHF communications. Maximum ruggedness and reliability can be achieved based on an emitter-ballasted die geometry. Using planar structure and technology, very delicate and complex electrode patterns can be produced, thus opening up a broad way for transistors to develop in the direction of high frequency and high power.
MS1076 Features
Common emitter configuration Device current: 16A Power dissipation: 250W Junction temperature: -65℃~150℃
MS1076 Applications
SSB and VHF communications
The three parts on the right have similar specifications to MS1076.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCollector Emitter Breakdown VoltageGainVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionCollector Base Voltage (VCBO)Radiation HardeningRoHS StatusFactory Lead TimeMaterialSeriesFeatureColorShrinkage RatioShrink TemperatureLengthDiameter - Inner, SuppliedDiameter - Inner, RecoveredRecovered Wall ThicknessView Compare
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MS1076IN PRODUCTION (Last Updated: 3 weeks ago)Chassis Mount, ScrewChassis MountM1744M174200°C TJBulk2003Obsolete1 (Unlimited)200°C-65°C320W320WNPN35V16A15 @ 7A 5V35V12dB35V16A30MHz70VNoRoHS Compliant------------
-
---100---55°C~135°CSpool2008Active----------------ROHS3 Compliant20 WeeksPolyolefin (PO)Q2-F2X(YG)Flame RetardantYellow, Green2 to 170°C100.0' 30.5m0.046 (1.17mm)0.023 (0.58mm)0.013 0.33mm
-
---100---55°C~125°CSpool2008Active----------------ROHS3 Compliant20 WeeksPolyolefin (PO), Irradiated, Halogen FreeQ2-LSLow Shrink TemperatureBlack2 to 165°C100.0' 30.5m0.187 (4.75mm)0.095 (2.41mm)0.019 0.50mm
-
---100---55°C~135°CSpool2008Active----------------ROHS3 Compliant20 WeeksPolyolefin (PO)Q2-F2X(YG)Flame RetardantYellow, Green2 to 170°C100.0' 30.5m0.093 (2.36mm)0.047 (1.19mm)0.017 0.43mm
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