NXP USA Inc. MRF1535NT1

Name: MRF1535NT1
Brand: NXP USA Inc.
SKU: 2474753-MRF1535NT1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MRF1535NT1

Manufacturer:: NXP USA Inc.

Ventron No:: 2474753-MRF1535NT1

Description:: FET RF 40V 520MHZ TO272-6 WRAP

ECAD Model:

Datasheet:: MRF1535NT1

Specifications

NXP USA Inc. MRF1535NT1 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF1535NT1.

Factory Lead Time
10 Weeks
Package / Case
TO-272AA
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated
40V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Current Rating (Amps)
6A
Terminal Position
DUAL
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
260
Frequency
520MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MRF1535
JESD-30 Code
R-PDFM-C6
Qualification Status
Not Qualified
Operating Temperature (Max)
200°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
500mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
13.5dB
Drain Current-Max (Abs) (ID)
6A
DS Breakdown Voltage-Min
40V
Power - Output
35W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
135W
Voltage - Test
12.5V
RoHS Status
ROHS3 Compliant

Description

MRF1535NT1 Description
Designed with frequencies up to 520 MHz for broadband commercial and industrial applications. These devices are perfect for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment due to their high gain and broadband performance.

MRF1535NT1 Features
? Excellent Group Delay and Phase Linearity Characteristics
? High Linearity, High Gain, and High Efficiency
? RoHS conformant
? on reel-to-reel tape. 1000 Units per 12 mm, 7 inch Reel, T1 Suffix.

MRF1535NT1 Applications
Switching applications

MRF1535NT1 More Descriptions

Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 35 W, 12.5 V
MOSFET, RF, N CHANNEL, 40V, TO-272; Transistor Type:RF FET; Drain Source Voltage Vds:40V; Continuous Drain Current Id:6A; Power Dissipation Pd:35W; RF Transistor Case:TO-272; No. of Pins:6; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
TRANSISTOR, RF, 40V, 6A, TO-272; Drain Source Voltage Vds: 40V; Continuous Drain Current Id: 6A; Power Dissipation Pd: 135W; Operating Frequency Min: 135MHz; Operating Frequency Max: 520MHz; RF Transistor Case: TO-272; No. of Pins: 6Pins; Operating Temperature Max: 200°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

Certification