ON Semiconductor MPSH10G
- Part Number:
- MPSH10G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462205-MPSH10G
- Description:
- TRANS NPN VHF/UHF SS 25V TO92
- ECAD Model:
-
- Datasheet:
- MPSH10G
ON Semiconductor MPSH10G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSH10G.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Voltage - Rated DC25V
- Max Power Dissipation350W
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Current Rating4mA
- Frequency650MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMPSH10
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350W
- Power - Max350mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product650MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)25V
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 4mA 10V
- Collector Emitter Breakdown Voltage25V
- Transition Frequency650MHz
- Collector Emitter Saturation Voltage500mV
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)3V
- hFE Min60
- Collector-Base Capacitance-Max0.7pF
- Height5.334mm
- Length5.1816mm
- Width4.191mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
The ON Semiconductor MPSH10G is a NPN Bipolar Junction Transistor (BJT) designed for use in RF applications. It has a maximum collector-emitter voltage of 25V and is packaged in a 3-pin TO-92 box.
Features of the MPSH10G include a high current gain of up to 500, a low noise figure of 1.5dB, and a low collector-emitter saturation voltage of 0.2V. It also has a high frequency response of up to 500MHz and a low capacitance of 1.5pF.
The MPSH10G is suitable for use in a variety of RF applications, such as amplifiers, oscillators, and mixers. It can also be used in switching applications, such as in power supplies and motor control circuits.
Features of the MPSH10G include a high current gain of up to 500, a low noise figure of 1.5dB, and a low collector-emitter saturation voltage of 0.2V. It also has a high frequency response of up to 500MHz and a low capacitance of 1.5pF.
The MPSH10G is suitable for use in a variety of RF applications, such as amplifiers, oscillators, and mixers. It can also be used in switching applications, such as in power supplies and motor control circuits.
MPSH10G More Descriptions
Transistor, Bipolar,Si,NPN,VHF/UHF,VCEO 25VDC,PD 1W,TO-92,VCBO 30VDC,hFE 60 | ON Semiconductor MPSH10G
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92
NPN Bipolar Small Signal Transistor
Trans GP BJT NPN 25V 3-Pin TO-92 Bulk
BIPOLAR TRANSISTOR, NPN, 25V; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:25V; Transition Frequency Typ, ft:650MHz; Power Dissipation, Pd:350mW; Operating Temperature Range:-55°C to 150°C ;RoHS Compliant: Yes
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92
NPN Bipolar Small Signal Transistor
Trans GP BJT NPN 25V 3-Pin TO-92 Bulk
BIPOLAR TRANSISTOR, NPN, 25V; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:25V; Transition Frequency Typ, ft:650MHz; Power Dissipation, Pd:350mW; Operating Temperature Range:-55°C to 150°C ;RoHS Compliant: Yes
The three parts on the right have similar specifications to MPSH10G.
-
ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)DC Current Gain (hFE) (Min) @ Ic, VceCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinCollector-Base Capacitance-MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSupplier Device PackageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionMountHTS CodeReach Compliance CodeQualification StatusGainMax Breakdown VoltageHighest Frequency BandNoise Figure (dB Typ @ f)View Compare
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MPSH10GLAST SHIPMENTS (Last Updated: 2 days ago)Through HoleTO-226-3, TO-92-3 (TO-226AA)NO3SILICON-55°C~150°C TJBulk2006e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors25V350WBOTTOM2604mA650MHz40MPSH1031Single350W350mWAMPLIFIER650MHzNPNNPN25V60 @ 4mA 10V25V650MHz500mV30V3V600.7pF5.334mm5.1816mm4.191mmNoRoHS CompliantLead Free------------- -
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-----------MPSH10----350mW---NPN-60 @ 4mA 10V-------------TO-92-325V50mA650MHz--------
-
OBSOLETE (Last Updated: 5 days ago)Through HoleTO-226-3, TO-92-3 (TO-226AA)-3SILICON-55°C~150°C TJBulk2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)Other Transistors15V350mWBOTTOM2405mA-30MPSH1731Single--AMPLIFIER800MHzNPNNPN15V25 @ 5mA 10V15V800MHz500mV20V3V250.9pF----Non-RoHS CompliantContains Lead----Through Hole8541.21.00.75not_compliantNot Qualified24dB15VVERY HIGH FREQUENCY B6dB @ 200MHz
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA)----Tape & Reel (TR)---Obsolete1 (Unlimited)-----------MPSH17----350mW---NPN-25 @ 5mA 10V-------------TO-92-315V-800MHz----24dB--6dB @ 200MHz
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