Fairchild/ON Semiconductor MMBT3904T
- Part Number:
- MMBT3904T
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463017-MMBT3904T
- Description:
- TRANS NPN 40V 0.2A SOT-523F
- Datasheet:
- MMBT3904T
Fairchild/ON Semiconductor MMBT3904T technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBT3904T.
- Lifecycle StatusLIFETIME (Last Updated: 1 day ago)
- Factory Lead Time6 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-89, SOT-490
- Number of Pins3
- Supplier Device PackageSOT-523F
- Weight30mg
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation250mW
- Frequency300MHz
- Base Part NumberMMBT3904
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation250mW
- Power - Max250mW
- Gain Bandwidth Product300MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage40V
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)200mA
- Max Frequency100MHz
- Collector Emitter Saturation Voltage300mV
- Max Breakdown Voltage40V
- Frequency - Transition300MHz
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- Height780μm
- Length1.7mm
- Width980μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT3904T Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor can take a breakdown input voltage of 40V volts.SOT-523F is the supplier device package for this product.This device displays a 40V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 200mA volts.
MMBT3904T Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the supplier device package of SOT-523F
MMBT3904T Applications
There are a lot of ON Semiconductor
MMBT3904T applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor can take a breakdown input voltage of 40V volts.SOT-523F is the supplier device package for this product.This device displays a 40V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 200mA volts.
MMBT3904T Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the supplier device package of SOT-523F
MMBT3904T Applications
There are a lot of ON Semiconductor
MMBT3904T applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT3904T More Descriptions
MMBT3904T Series 40 V 0.2 A 250 mW NPN Epitaxial Silicon Transistor - SOT-523F
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
200 mA, 40 V NPN Bipolar Junction Transistor
Trans GP BJT NPN 40V 0.2A 300mW 3-Pin SOT-523FL T/R
Bipolar Transistors - BJT NPN Epitaxial Silicon
TRANSISTOR, BIPOL, NPN, 40V, SOT-523F-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 250mW; DC Collector Current: 200mA; DC Current Gain hFE: 30hFE; Transistor Case Style: SOT-523F; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
200 mA, 40 V NPN Bipolar Junction Transistor
Trans GP BJT NPN 40V 0.2A 300mW 3-Pin SOT-523FL T/R
Bipolar Transistors - BJT NPN Epitaxial Silicon
TRANSISTOR, BIPOL, NPN, 40V, SOT-523F-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 250mW; DC Collector Current: 200mA; DC Current Gain hFE: 30hFE; Transistor Case Style: SOT-523F; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to MMBT3904T.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationFrequencyBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeConfigurationTransistor ApplicationPolarity/Channel TypeCurrent - Collector Cutoff (Max)Transition FrequencyTurn Off Time-Max (toff)Turn On Time-Max (ton)SeriesECCN CodeVoltage - Rated DCReach Compliance CodeCurrent RatingPin CountQualification StatusContinuous Collector CurrentPbfree CodeTerminationMax Junction Temperature (Tj)View Compare
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MMBT3904TLIFETIME (Last Updated: 1 day ago)6 WeeksSurface MountSurface MountSC-89, SOT-4903SOT-523F30mg150°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)150°C-55°C250mW300MHzMMBT39041NPNSingle250mW250mW300MHzNPN40V200mA100 @ 10mA 1V300mV @ 5mA, 50mA40V40V200mA100MHz300mV40V300MHz60V6V100780μm1.7mm980μmNo SVHCNoROHS3 CompliantLead Free-----------------------------
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-10 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2011Active1 (Unlimited)--225mW--1---300mW-NPN1V600mA100 @ 150mA 10mV1V @ 50mA, 500mA40V-----300MHz--------ROHS3 Compliant-SILICONe33Tin (Sn)Other TransistorsDUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G3SINGLESWITCHINGNPN10nA300MHz285ns35ns-----------
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-33-7.994566mg-55°C~150°C TJTape & Reel (TR)2005Obsolete1 (Unlimited)--300mW300MHzMMBT41241-Single300mW-300MHzNPN25V200mA120 @ 2mA 1V300mV @ 5mA, 50mA25V----25V-30V5V1201mm3.05mm1.4mmNo SVHC-Non-RoHS CompliantContains LeadSILICONe03--DUALGULL WING23510--SWITCHINGNPN50nA ICBO300MHz--Automotive, AEC-Q101EAR9925Vnot_compliant200mA3Not Qualified200mA---
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-15 WeeksSurface MountSurface MountSOT-5233-2.012816mg-55°C~150°C TJTape & Reel (TR)2007Active1 (Unlimited)--150mW200MHzMMBT2907A1-Single150mW-200MHzPNP-60V-600mA100 @ 150mA 10V1.6V @ 50mA, 500mA-60V-600mA--1.6V60V--60V-5V100900μm1.6mm800μmNo SVHCNoROHS3 CompliantLead FreeSILICONe33Matte Tin (Sn) - annealedOther TransistorsDUALGULL WING26030---PNP10nA ICBO200MHz-45nsAutomotive, AEC-Q101EAR99-60V--600mA3--600mAyesSMD/SMT150°C
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