Fairchild/ON Semiconductor MMBFJ108
- Part Number:
- MMBFJ108
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2495731-MMBFJ108
- Description:
- JFET N-CH 25V 350MW SSOT3
- Datasheet:
- MMBFJ108
Fairchild/ON Semiconductor MMBFJ108 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBFJ108.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time24 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC25V
- Max Power Dissipation350mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating80mA
- Base Part NumberMBFJ108
- Number of Elements1
- Element ConfigurationSingle
- Operating ModeDEPLETION MODE
- Power Dissipation350mW
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Breakdown Voltage-25V
- Drain to Source Voltage (Vdss)25V
- Continuous Drain Current (ID)80mA
- Gate to Source Voltage (Vgs)-25V
- FET TechnologyJUNCTION
- Max Junction Temperature (Tj)150°C
- Drain to Source Resistance8Ohm
- Current - Drain (Idss) @ Vds (Vgs=0)80mA @ 15V
- Voltage - Cutoff (VGS off) @ Id3V @ 10nA
- Resistance - RDS(On)8Ohm
- Height1.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBFJ108 Description
The MMBFJ108 is an N-channel JFET developed for digital switching applications that require extremely low ON resistance.
MMBFJ108 Features
25V Drain-gate voltage
-25V Gate-source voltage
10mA Forward gate current
MMBFJ108 Applications
Industrial
Power Management
The MMBFJ108 is an N-channel JFET developed for digital switching applications that require extremely low ON resistance.
MMBFJ108 Features
25V Drain-gate voltage
-25V Gate-source voltage
10mA Forward gate current
MMBFJ108 Applications
Industrial
Power Management
MMBFJ108 More Descriptions
MMBFJ108 Series 25 V 80 mA Surface Mount N-Channel Switch - SuperSot-3
N-Channel Switch This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 58.
Transistor; Transistor Type:JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:80mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Package/Case:SuperSOT-3 ;RoHS Compliant: Yes
N-Channel Switch This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 58.
Transistor; Transistor Type:JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:80mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Package/Case:SuperSOT-3 ;RoHS Compliant: Yes
The three parts on the right have similar specifications to MMBFJ108.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingBase Part NumberNumber of ElementsElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationBreakdown VoltageDrain to Source Voltage (Vdss)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)FET TechnologyMax Junction Temperature (Tj)Drain to Source ResistanceCurrent - Drain (Idss) @ Vds (Vgs=0)Voltage - Cutoff (VGS off) @ IdResistance - RDS(On)HeightREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal FinishHTS CodePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusOperating Temperature (Max)Polarity/Channel TypeDrain-source On Resistance-MaxDrain to Source Breakdown VoltageInput CapacitanceInput Capacitance (Ciss) (Max) @ VdsSupplier Device PackagePower - MaxVoltage - Breakdown (V(BR)GSS)View Compare
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MMBFJ108ACTIVE (Last Updated: 1 day ago)24 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Other Transistors25V350mWDUALGULL WING80mAMBFJ1081SingleDEPLETION MODE350mWN-ChannelSWITCHING-25V25V80mA-25VJUNCTION150°C8Ohm80mA @ 15V3V @ 10nA8Ohm1.22mmNo SVHCNoROHS3 CompliantLead Free------------------
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LAST SHIPMENTS (Last Updated: 3 days ago)----SOT-23-33-SILICON-Cut Tape (CT)2006e0noObsolete1 (Unlimited)3EAR99Other Transistors30V225mWDUALGULL WING50mA-1SingleDEPLETION MODE--SWITCHING-30V-30VJUNCTION--------Non-RoHS CompliantContains LeadYESTin/Lead (Sn/Pb)8541.21.00.95240not_compliant303Not Qualified150°CN-CHANNEL60Ohm30V14pF----
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LAST SHIPMENTS (Last Updated: 1 week ago)--Surface MountSurface MountTO-236-3, SC-59, SOT-23-33-SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesObsolete1 (Unlimited)3EAR99Other Transistors25V225mWDUALGULL WING5mAMBF54571SingleDEPLETION MODE200mWN-ChannelAMPLIFIER--5mA25VJUNCTION--1mA @ 15V500mV @ 10nA----RoHS CompliantLead Free-Tin (Sn)-260unknown403Not Qualified---25V-7pF @ 15V---
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----Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2008--Obsolete1 (Unlimited)-------------N-Channel--------4mA @ 20V2V @ 10nA--------------------SOT-23-3350mW40V
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