ON Semiconductor MJL4281A
- Part Number:
- MJL4281A
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2846547-MJL4281A
- Description:
- TRANS NPN 350V 15A TO264
- Datasheet:
- MJL4281A
ON Semiconductor MJL4281A technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJL4281A.
- Lifecycle StatusOBSOLETE (Last Updated: 2 weeks ago)
- Mounting TypeThrough Hole
- Package / CaseTO-264-3, TO-264AA
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2006
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Voltage - Rated DC350V
- Max Power Dissipation230W
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating15A
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product35MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)1V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5A 5V
- Current - Collector Cutoff (Max)100μA
- Vce Saturation (Max) @ Ib, Ic1V @ 800mA, 8A
- Collector Emitter Breakdown Voltage350V
- Transition Frequency35MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)350V
- Emitter Base Voltage (VEBO)5V
- hFE Min80
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MJL4281A Description
MJL4281A is an NPN Bipolar Transistors-BJT made by onsemi. It can be used as a power transistor for high power audio. Onsemi MJL4281A has a high safe operating area, and low harmonic distortion. What's more, the NPN Bipolar Transistors-BJT MJL4281A is a complement to MJL4302A. MJL4281A can be applied in audio applications due to the following features. And its ideal operating temperature is between -65 and 150℃.
MJL4281A Features
High Gain - 80 to 250
hfe = 50 (min) at Ic = 8A
Low Harmonic Distortion
High Safe Operating Area - 1.0 A / 100 V at 1 Second
High ft
- 350V Collector-Emitter Sustaining Voltage
Gain Linearity from 100 mA to 5 A
MJL4281A Applications
High power audio amplifier
laptops
smartphones
disk head positioners
other linear applications
MJL4281A is an NPN Bipolar Transistors-BJT made by onsemi. It can be used as a power transistor for high power audio. Onsemi MJL4281A has a high safe operating area, and low harmonic distortion. What's more, the NPN Bipolar Transistors-BJT MJL4281A is a complement to MJL4302A. MJL4281A can be applied in audio applications due to the following features. And its ideal operating temperature is between -65 and 150℃.
MJL4281A Features
High Gain - 80 to 250
hfe = 50 (min) at Ic = 8A
Low Harmonic Distortion
High Safe Operating Area - 1.0 A / 100 V at 1 Second
High ft
- 350V Collector-Emitter Sustaining Voltage
Gain Linearity from 100 mA to 5 A
MJL4281A Applications
High power audio amplifier
laptops
smartphones
disk head positioners
other linear applications
MJL4281A More Descriptions
Bipolar Power Transistor, NPN, 15 A, 350 V, 230 Watt
Power Bipolar Transistor, 15A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
RES SMD 95.3K OHM 1% 1/2W 1206
French Electronic Distributor since 1988
Power Bipolar Transistor, 15A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
RES SMD 95.3K OHM 1% 1/2W 1206
French Electronic Distributor since 1988
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