MJL4281A

ON Semiconductor MJL4281A

Part Number:
MJL4281A
Manufacturer:
ON Semiconductor
Ventron No:
2846547-MJL4281A
Description:
TRANS NPN 350V 15A TO264
ECAD Model:
Datasheet:
MJL4281A

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Specifications
ON Semiconductor MJL4281A technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJL4281A.
  • Lifecycle Status
    OBSOLETE (Last Updated: 2 weeks ago)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-264-3, TO-264AA
  • Surface Mount
    NO
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Published
    2006
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    350V
  • Max Power Dissipation
    230W
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    15A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    35MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    1V
  • Max Collector Current
    15A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5A 5V
  • Current - Collector Cutoff (Max)
    100μA
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 800mA, 8A
  • Collector Emitter Breakdown Voltage
    350V
  • Transition Frequency
    35MHz
  • Collector Emitter Saturation Voltage
    1V
  • Collector Base Voltage (VCBO)
    350V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    80
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
MJL4281A Description

MJL4281A is an NPN Bipolar Transistors-BJT made by onsemi. It can be used as a power transistor for high power audio. Onsemi MJL4281A has a high safe operating area, and low harmonic distortion. What's more, the NPN Bipolar Transistors-BJT MJL4281A is a complement to MJL4302A. MJL4281A can be applied in audio applications due to the following features. And its ideal operating temperature is between -65 and 150℃.

MJL4281A Features

High Gain - 80 to 250
hfe = 50 (min) at Ic = 8A
Low Harmonic Distortion
High Safe Operating Area - 1.0 A / 100 V at 1 Second
High ft
- 350V Collector-Emitter Sustaining Voltage
Gain Linearity from 100 mA to 5 A

MJL4281A Applications

High power audio amplifier
laptops
smartphones
disk head positioners
other linear applications
MJL4281A More Descriptions
Bipolar Power Transistor, NPN, 15 A, 350 V, 230 Watt
Power Bipolar Transistor, 15A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
RES SMD 95.3K OHM 1% 1/2W 1206
French Electronic Distributor since 1988
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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