ON Semiconductor MJF47G
- Part Number:
- MJF47G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 4538773-MJF47G
- Description:
- TRANS NPN 250V 1A TO220FP
- Datasheet:
- MJF47G
ON Semiconductor MJF47G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJF47G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time8 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureUL RECOGNIZED
- SubcategoryOther Transistors
- Voltage - Rated DC250V
- Max Power Dissipation2W
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Frequency10MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionISOLATED
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product10MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)250V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 300mA 10V
- Current - Collector Cutoff (Max)200μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 1A
- Collector Emitter Breakdown Voltage250V
- Transition Frequency10MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)350V
- Emitter Base Voltage (VEBO)5V
- hFE Min30
- Height6.35mm
- Length6.35mm
- Width6.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJF47G Overview
In this device, the DC current gain is 30 @ 300mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 200mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).10MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
MJF47G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJF47G Applications
There are a lot of ON Semiconductor
MJF47G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 30 @ 300mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 200mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).10MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
MJF47G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJF47G Applications
There are a lot of ON Semiconductor
MJF47G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJF47G More Descriptions
Trans GP BJT NPN 250V 1A 2000mW 3-Pin(3 Tab) TO-220FP Tube
MJF Series 250 V 1 A Flange Mount NPN Power Transistor - TO-220FP
Trans GP BJT NPN 250V 1A 3-Pin(3 Tab) TO-220 Full-Pak Rail
Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
High Voltage NPN Bipolar Power Transistor
TRANSISTOR, NPN, 250V, 1A, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 40mW; DC Collector Current: 1A; DC Current Gain hFE: 10hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)
Transistor Polarity:Npn; Collector Emitter Voltage Max:250V; Continuous Collector Current:1A; Power Dissipation:40Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:10Hz; Dc Current Gain Hfe Min:10Hfe Rohs Compliant: Yes |Onsemi MJF47G.
Designed for line operated audio output amplifiers switching power supply drivers and other switching applications where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.
MJF Series 250 V 1 A Flange Mount NPN Power Transistor - TO-220FP
Trans GP BJT NPN 250V 1A 3-Pin(3 Tab) TO-220 Full-Pak Rail
Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
High Voltage NPN Bipolar Power Transistor
TRANSISTOR, NPN, 250V, 1A, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 40mW; DC Collector Current: 1A; DC Current Gain hFE: 10hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)
Transistor Polarity:Npn; Collector Emitter Voltage Max:250V; Continuous Collector Current:1A; Power Dissipation:40Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:10Hz; Dc Current Gain Hfe Min:10Hfe Rohs Compliant: Yes |Onsemi MJF47G.
Designed for line operated audio output amplifiers switching power supply drivers and other switching applications where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.
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