MJF47G

ON Semiconductor MJF47G

Part Number:
MJF47G
Manufacturer:
ON Semiconductor
Ventron No:
4538773-MJF47G
Description:
TRANS NPN 250V 1A TO220FP
ECAD Model:
Datasheet:
MJF47G

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Specifications
ON Semiconductor MJF47G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJF47G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Surface Mount
    NO
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    UL RECOGNIZED
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    250V
  • Max Power Dissipation
    2W
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    1A
  • Frequency
    10MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    2W
  • Case Connection
    ISOLATED
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    10MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    250V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 300mA 10V
  • Current - Collector Cutoff (Max)
    200μA
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 200mA, 1A
  • Collector Emitter Breakdown Voltage
    250V
  • Transition Frequency
    10MHz
  • Collector Emitter Saturation Voltage
    1V
  • Collector Base Voltage (VCBO)
    350V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    30
  • Height
    6.35mm
  • Length
    6.35mm
  • Width
    6.35mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJF47G Overview
In this device, the DC current gain is 30 @ 300mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 200mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).10MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.

MJF47G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz


MJF47G Applications
There are a lot of ON Semiconductor
MJF47G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJF47G More Descriptions
Trans GP BJT NPN 250V 1A 2000mW 3-Pin(3 Tab) TO-220FP Tube
MJF Series 250 V 1 A Flange Mount NPN Power Transistor - TO-220FP
Trans GP BJT NPN 250V 1A 3-Pin(3 Tab) TO-220 Full-Pak Rail
Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
High Voltage NPN Bipolar Power Transistor
TRANSISTOR, NPN, 250V, 1A, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 40mW; DC Collector Current: 1A; DC Current Gain hFE: 10hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)
Transistor Polarity:Npn; Collector Emitter Voltage Max:250V; Continuous Collector Current:1A; Power Dissipation:40Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:10Hz; Dc Current Gain Hfe Min:10Hfe Rohs Compliant: Yes |Onsemi MJF47G.
Designed for line operated audio output amplifiers switching power supply drivers and other switching applications where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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