MIXA225PF1200TSF

IXYS MIXA225PF1200TSF

Part Number:
MIXA225PF1200TSF
Manufacturer:
IXYS
Ventron No:
3554817-MIXA225PF1200TSF
Description:
IGBT MODULE 1200V 250A
ECAD Model:
Datasheet:
MIXA225PF1200TSF

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Specifications
IXYS MIXA225PF1200TSF technical specifications, attributes, parameters and parts with similar specifications to IXYS MIXA225PF1200TSF.
  • Factory Lead Time
    14 Weeks
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Operating Temperature
    -40°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2013
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    1.1kW
  • Number of Elements
    1
  • Configuration
    Half Bridge
  • Power - Max
    1100W
  • Input
    Standard
  • Collector Emitter Voltage (VCEO)
    2.1V
  • Max Collector Current
    360A
  • Current - Collector Cutoff (Max)
    300μA
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 225A
  • IGBT Type
    PT
  • NTC Thermistor
    Yes
  • Gate-Emitter Voltage-Max
    20V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MIXA225PF1200TSF Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet MIXA225PF1200TSF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MIXA225PF1200TSF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MIXA225PF1200TSF More Descriptions
1200V, 250A, SIMBUS PKG, XPT IGBT Module
French Electronic Distributor since 1988
IGBT Modules XPT IGBT Module
IGBT MOD 1200V 360A 1100W
Product Comparison
The three parts on the right have similar specifications to MIXA225PF1200TSF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Subcategory
    Max Power Dissipation
    Number of Elements
    Configuration
    Power - Max
    Input
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Current - Collector Cutoff (Max)
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    NTC Thermistor
    Gate-Emitter Voltage-Max
    RoHS Status
    Lead Free
    Transistor Element Material
    Number of Terminations
    Additional Feature
    Terminal Position
    Terminal Form
    Pin Count
    JESD-30 Code
    Case Connection
    Transistor Application
    Polarity/Channel Type
    Turn On Time
    Turn Off Time-Nom (toff)
    Pbfree Code
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    View Compare
  • MIXA225PF1200TSF
    MIXA225PF1200TSF
    14 Weeks
    Chassis Mount
    Chassis Mount
    Module
    -40°C~150°C TJ
    Bulk
    2013
    Active
    1 (Unlimited)
    Insulated Gate BIP Transistors
    1.1kW
    1
    Half Bridge
    1100W
    Standard
    2.1V
    360A
    300μA
    1.2kV
    1200V
    2.1V @ 15V, 225A
    PT
    Yes
    20V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MIXA150Q1200VA
    18 Weeks
    Chassis Mount
    Chassis Mount
    V1A-PAK
    -40°C~150°C TJ
    Bulk
    2015
    Active
    1 (Unlimited)
    -
    695W
    -
    Single
    695W
    Standard
    2.1V
    220A
    100μA
    1.2kV
    1200V
    2.1V @ 15V, 150A
    PT
    No
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MIXA20W1200TML
    -
    Chassis Mount
    Chassis Mount
    E1
    -40°C~125°C TJ
    Bulk
    2011
    Active
    1 (Unlimited)
    Insulated Gate BIP Transistors
    100W
    6
    Three Phase Inverter
    100W
    Standard
    2.1V
    28A
    100μA
    1.2kV
    1200V
    2.1V @ 15V, 16A
    PT
    Yes
    20V
    ROHS3 Compliant
    -
    SILICON
    24
    UL RECOGNIZED
    UPPER
    UNSPECIFIED
    24
    R-XUFM-X24
    ISOLATED
    POWER CONTROL
    N-CHANNEL
    110 ns
    350 ns
    -
    -
    -
    -
  • MIXA60W1200TED
    20 Weeks
    Chassis Mount
    Chassis Mount
    E2
    -40°C~125°C TJ
    Bulk
    2010
    Active
    1 (Unlimited)
    Insulated Gate BIP Transistors
    290W
    6
    Three Phase Inverter with Brake
    290W
    Standard
    2.1V
    85A
    500μA
    1.2kV
    1200V
    2.1V @ 15V, 55A
    PT
    Yes
    20V
    ROHS3 Compliant
    -
    SILICON
    28
    UL RECOGNIZED
    UPPER
    UNSPECIFIED
    28
    R-XUFM-X28
    ISOLATED
    POWER CONTROL
    N-CHANNEL
    110 ns
    350 ns
    yes
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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