IXYS MIXA225PF1200TSF
- Part Number:
- MIXA225PF1200TSF
- Manufacturer:
- IXYS
- Ventron No:
- 3554817-MIXA225PF1200TSF
- Description:
- IGBT MODULE 1200V 250A
- Datasheet:
- MIXA225PF1200TSF
IXYS MIXA225PF1200TSF technical specifications, attributes, parameters and parts with similar specifications to IXYS MIXA225PF1200TSF.
- Factory Lead Time14 Weeks
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseModule
- Operating Temperature-40°C~150°C TJ
- PackagingBulk
- Published2013
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation1.1kW
- Number of Elements1
- ConfigurationHalf Bridge
- Power - Max1100W
- InputStandard
- Collector Emitter Voltage (VCEO)2.1V
- Max Collector Current360A
- Current - Collector Cutoff (Max)300μA
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 225A
- IGBT TypePT
- NTC ThermistorYes
- Gate-Emitter Voltage-Max20V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MIXA225PF1200TSF Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet MIXA225PF1200TSF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MIXA225PF1200TSF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet MIXA225PF1200TSF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MIXA225PF1200TSF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MIXA225PF1200TSF More Descriptions
1200V, 250A, SIMBUS PKG, XPT IGBT Module
French Electronic Distributor since 1988
IGBT Modules XPT IGBT Module
IGBT MOD 1200V 360A 1100W
French Electronic Distributor since 1988
IGBT Modules XPT IGBT Module
IGBT MOD 1200V 360A 1100W
The three parts on the right have similar specifications to MIXA225PF1200TSF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)SubcategoryMax Power DissipationNumber of ElementsConfigurationPower - MaxInputCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Vce(on) (Max) @ Vge, IcIGBT TypeNTC ThermistorGate-Emitter Voltage-MaxRoHS StatusLead FreeTransistor Element MaterialNumber of TerminationsAdditional FeatureTerminal PositionTerminal FormPin CountJESD-30 CodeCase ConnectionTransistor ApplicationPolarity/Channel TypeTurn On TimeTurn Off Time-Nom (toff)Pbfree CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusView Compare
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MIXA225PF1200TSF14 WeeksChassis MountChassis MountModule-40°C~150°C TJBulk2013Active1 (Unlimited)Insulated Gate BIP Transistors1.1kW1Half Bridge1100WStandard2.1V360A300μA1.2kV1200V2.1V @ 15V, 225APTYes20VROHS3 CompliantLead Free-----------------
-
18 WeeksChassis MountChassis MountV1A-PAK-40°C~150°C TJBulk2015Active1 (Unlimited)-695W-Single695WStandard2.1V220A100μA1.2kV1200V2.1V @ 15V, 150APTNo-ROHS3 Compliant-----------------
-
-Chassis MountChassis MountE1-40°C~125°C TJBulk2011Active1 (Unlimited)Insulated Gate BIP Transistors100W6Three Phase Inverter100WStandard2.1V28A100μA1.2kV1200V2.1V @ 15V, 16APTYes20VROHS3 Compliant-SILICON24UL RECOGNIZEDUPPERUNSPECIFIED24R-XUFM-X24ISOLATEDPOWER CONTROLN-CHANNEL110 ns350 ns----
-
20 WeeksChassis MountChassis MountE2-40°C~125°C TJBulk2010Active1 (Unlimited)Insulated Gate BIP Transistors290W6Three Phase Inverter with Brake290WStandard2.1V85A500μA1.2kV1200V2.1V @ 15V, 55APTYes20VROHS3 Compliant-SILICON28UL RECOGNIZEDUPPERUNSPECIFIED28R-XUFM-X28ISOLATEDPOWER CONTROLN-CHANNEL110 ns350 nsyesNOT SPECIFIEDNOT SPECIFIEDNot Qualified
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