Microchip Technology MD1822K6-G
- Part Number:
- MD1822K6-G
- Manufacturer:
- Microchip Technology
- Ventron No:
- 3254185-MD1822K6-G
- Description:
- IC MOSFET DRIVER HI SPEED 16VQFN
- Datasheet:
- MD1822K6-G
Description
The MD1822 is a high-speed, four-channel MOSFET driver designed for driving high-voltage P-channel and N-channel MOSFETs for medical ultrasound applications and other applications requiring a high-output current for a capacitive load. The high-speed input stage of the MD1822 can operate from a 1.8V to 5V logic interface with an optimum operating input signal range of 1.8V to 3.3V. An adaptive threshold circuit is used to set the level translator switch threshold to the average of the input logic and logic 1 levels. The input logic levels may be ground-referenced even though the driver is putting out bipolar signals. The level translator uses a proprietary circuit, which provides DC coupling together with high-speed operation.
The output stage of the MD1822 has separate power connections, enabling the output signal L and H levels to be chosen independently from the supply voltages used for the majority of the circuit. As an example, the input logic levels may be 0V and 1.8V, the control logic may be powered by 5V and -5V, and the output L and H levels may be varied anywhere over the range of -5V to 5V. The output stage is capable of peak currents of up to ±2A, depending on the supply voltages used and load capacitance present. The PE pin serves a dual purpose. First, its logic H level is used to compute the threshold voltage level for the channel input level translators. (See Figure 3-1.) Second, when PE is low, the outputs are disabled, with the A and C outputs high and the B and D outputs low. This assists in properly precharging the AC coupling capacitors that may be used in series in the gate drive circuit of an external PMOS and NMOS transistor pair.
Features
High-Speed 4-Channel MOSFET Driver with Two Inverting and Two Non-Inverting Outputs
Mixed Inversion MOSFET Driver
6 ns Rise and Fall Time
2A Peak Output Source-and-Sink Current
1.8V to 5V Input CMOS Compatible
5V to 10V Total Supply Voltage
Smart Logic Threshold
Low-Jitter Design
Four Matched Channels
Drives Two P-Channel and Two N-Channel MOSFETs
Outputs can swing below Ground
Low-Inductance, Quad-Flat No-Lead Package
High-Performance, Thermally Enhanced Packaging
Applications
Medical Ultrasound Imaging
Piezoelectric Transducer Drivers
Non-Destructive Testing
PIN Diode Driver
CCD Clock Driver/Buffer
High-Speed Level Translator
The MD1822 is a high-speed, four-channel MOSFET driver designed for driving high-voltage P-channel and N-channel MOSFETs for medical ultrasound applications and other applications requiring a high-output current for a capacitive load. The high-speed input stage of the MD1822 can operate from a 1.8V to 5V logic interface with an optimum operating input signal range of 1.8V to 3.3V. An adaptive threshold circuit is used to set the level translator switch threshold to the average of the input logic and logic 1 levels. The input logic levels may be ground-referenced even though the driver is putting out bipolar signals. The level translator uses a proprietary circuit, which provides DC coupling together with high-speed operation.
The output stage of the MD1822 has separate power connections, enabling the output signal L and H levels to be chosen independently from the supply voltages used for the majority of the circuit. As an example, the input logic levels may be 0V and 1.8V, the control logic may be powered by 5V and -5V, and the output L and H levels may be varied anywhere over the range of -5V to 5V. The output stage is capable of peak currents of up to ±2A, depending on the supply voltages used and load capacitance present. The PE pin serves a dual purpose. First, its logic H level is used to compute the threshold voltage level for the channel input level translators. (See Figure 3-1.) Second, when PE is low, the outputs are disabled, with the A and C outputs high and the B and D outputs low. This assists in properly precharging the AC coupling capacitors that may be used in series in the gate drive circuit of an external PMOS and NMOS transistor pair.
Features
High-Speed 4-Channel MOSFET Driver with Two Inverting and Two Non-Inverting Outputs
Mixed Inversion MOSFET Driver
6 ns Rise and Fall Time
2A Peak Output Source-and-Sink Current
1.8V to 5V Input CMOS Compatible
5V to 10V Total Supply Voltage
Smart Logic Threshold
Low-Jitter Design
Four Matched Channels
Drives Two P-Channel and Two N-Channel MOSFETs
Outputs can swing below Ground
Low-Inductance, Quad-Flat No-Lead Package
High-Performance, Thermally Enhanced Packaging
Applications
Medical Ultrasound Imaging
Piezoelectric Transducer Drivers
Non-Destructive Testing
PIN Diode Driver
CCD Clock Driver/Buffer
High-Speed Level Translator
Microchip Technology MD1822K6-G technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology MD1822K6-G.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case16-VFQFN Exposed Pad
- Number of Pins16
- Operating Temperature-20°C~125°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations16
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- Max Power Dissipation2.2W
- Voltage - Supply5V~10V
- Terminal PositionQUAD
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Terminal Pitch0.5mm
- Reflow Temperature-Max (s)40
- Base Part NumberMD1822
- Max Output Current2A
- Power Dissipation2.2W
- Propagation Delay6.5 ns
- Input TypeInverting, Non-Inverting
- Turn On Delay Time6.5 ns
- Rise Time7ns
- Fall Time (Typ)7 ns
- Rise / Fall Time (Typ)7ns 7ns
- Channel TypeIndependent
- Number of Drivers4
- Output Peak Current Limit-Nom2A
- Driven ConfigurationHalf-Bridge
- Gate TypeN-Channel, P-Channel MOSFET
- Current - Peak Output (Source, Sink)2A 2A
- High Side DriverYES
- Logic Voltage - VIL, VIH0.3V 1.7V
- Height Seated (Max)1mm
- Length3mm
- Width3mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
The three parts on the right have similar specifications to MD1822K6-G.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsTerminal PitchReflow Temperature-Max (s)Base Part NumberMax Output CurrentPower DissipationPropagation DelayInput TypeTurn On Delay TimeRise TimeFall Time (Typ)Rise / Fall Time (Typ)Channel TypeNumber of DriversOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHHeight Seated (Max)LengthWidthRadiation HardeningRoHS StatusWeightTerminal FormSupply VoltageFrequencyQualification StatusOperating Supply CurrentNominal Supply CurrentInterface IC TypeLead FreeView Compare
-
MD1822K6-G16 WeeksSurface MountSurface Mount16-VFQFN Exposed Pad16-20°C~125°C TJTape & Reel (TR)2012e3Active1 (Unlimited)16EAR99Matte Tin (Sn) - annealed2.2W5V~10VQUAD26010.5mm40MD18222A2.2W6.5 nsInverting, Non-Inverting6.5 ns7ns7 ns7ns 7nsIndependent42AHalf-BridgeN-Channel, P-Channel MOSFET2A 2AYES0.3V 1.7V1mm3mm3mmNoROHS3 Compliant----------
-
7 WeeksSurface MountSurface Mount16-VQFN Exposed Pad16-20°C~125°C TJTape & Reel (TR)2013e3Active1 (Unlimited)16EAR99Matte Tin (Sn) - annealed2.2W4.5V~13VQUAD26010.65mm40MD18132A2.2W7 nsNon-Inverting-6ns6 ns6ns 6nsIndependent42AHalf-BridgeN-Channel, P-Channel MOSFET2A 2AYES0.3V 1.7V1mm---ROHS3 Compliant57.09594mgNO LEAD12V100kHzNot Qualified7mA7mAAND GATE BASED MOSFET DRIVER-
-
7 WeeksSurface MountSurface Mount16-VQFN Exposed Pad16-20°C~125°C TJTape & Reel (TR)2012e3Active3 (168 Hours)16EAR99Matte Tin (Sn) - annealed2.2W5V~12VQUAD26010.65mm40MD18102A2.2W7 nsNon-Inverting-6ns6 ns6ns 6nsIndependent42AHalf-BridgeN-Channel, P-Channel MOSFET2A 2AYES0.3V 1.7V1mm---ROHS3 Compliant57.09594mgNO LEAD12V100kHzNot Qualified7mA7mAAND GATE BASED MOSFET DRIVERLead Free
-
7 WeeksSurface MountSurface Mount16-VFQFN Exposed Pad16-20°C~125°C TJTape & Reel (TR)2012e3Active1 (Unlimited)16EAR99Matte Tin (Sn) - annealed2.2W5V~10VQUAD26010.5mm40MD18212A2.2W6.5 nsNon-Inverting-7ns7 ns7ns 7nsIndependent4-Half-BridgeN-Channel, P-Channel MOSFET2A 2AYES0.3V 1.7V1mm3mm3mmNoROHS3 Compliant---------
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