Microchip Technology MCP14700-E/SN
- Part Number:
- MCP14700-E/SN
- Manufacturer:
- Microchip Technology
- Ventron No:
- 3254448-MCP14700-E/SN
- Description:
- IC MOSFET DRIVER HIGH/LOW 8SOIC
- Datasheet:
- MCP14700-E/SN
- Payment:
- Delivery:
Description
The MCP14700 is a high-speed synchronous MOSFET driver designed to optimally drive a high-side and low-side N-Channel MOSFET. It is particularly well suited for driving low-FOM MOSFETs, including Microchip's MCP87000 family of high-speed MOSFETs. The MCP14700 has two PWM inputs to allow independent control of the external N-Channel MOSFETs. Since there is no internal cross conduction protection circuitry, the external MOSFET dead time can be tightly controlled, allowing for more efficient systems or unique motor control algorithms.
The transition thresholds for the PWM inputs are typically 1.6V on a rising PWM input signal and typically 1.2V on a falling PWM input signal. This makes the MCP14700 ideally suited for controllers that utilize 3.0V TTL/CMOS logic. The PWM inputs are internally pulled low, ensuring the output drive signals are low if the inputs are floating.
The HIGHDR and LOWDR peak source current capability of the MCP14700 device is typically 2A. While the HIGHDR can sink 2A peak typically, the LOWDR can sink 3.5A peak typically. The low resistance pull-up and pull-down drive allow the MCP14700 to quickly transition a 3300 pF load in typically 10 ns. Bootstrapping for the high-side drive is internally implemented, which allows for a reduced system cost and design complexity.
The MCP14700 features undervoltage lockout (UVLO) with a typical hysteresis of 500 mV. Overtemperature protection with hysteresis is also featured on the device.
Features
Ideally suited to drive low Figure-of-Merit (FOM) MOSFETs such as Microchip's MCP87000 MOSFET family
Independent PWM Input Control for High-Side and Low-Side Gate Drive
Input Logic Level Threshold 3.0V TTL Compatible
Dual Output MOSFET Drive for Synchronous Applications
High Peak Output Current: 2A (typical)
Internal Bootstrap Blocking Device
36V BOOT Pin Maximum Rating
Low Supply Current 45 μA (typical)
High Capacitive Load Drive Capability:
-3300 pF in 10.0 ns (typical)
Input Voltage Undervoltage Lockout Protection
Overtemperature Protection
Space Saving Packages:
8-Lead SOIC
8-Lead 3x3 DFN
Applications
3-Phase BLDC Motor Control
High Efficient Synchronous DC/DC Buck Converters
High-Current Low Output Voltage Synchronous DC/DC Buck Converters
High Input Voltage Synchronous DC/DC Buck Converters
Core Voltage Supplies for Microprocessors
The MCP14700 is a high-speed synchronous MOSFET driver designed to optimally drive a high-side and low-side N-Channel MOSFET. It is particularly well suited for driving low-FOM MOSFETs, including Microchip's MCP87000 family of high-speed MOSFETs. The MCP14700 has two PWM inputs to allow independent control of the external N-Channel MOSFETs. Since there is no internal cross conduction protection circuitry, the external MOSFET dead time can be tightly controlled, allowing for more efficient systems or unique motor control algorithms.
The transition thresholds for the PWM inputs are typically 1.6V on a rising PWM input signal and typically 1.2V on a falling PWM input signal. This makes the MCP14700 ideally suited for controllers that utilize 3.0V TTL/CMOS logic. The PWM inputs are internally pulled low, ensuring the output drive signals are low if the inputs are floating.
The HIGHDR and LOWDR peak source current capability of the MCP14700 device is typically 2A. While the HIGHDR can sink 2A peak typically, the LOWDR can sink 3.5A peak typically. The low resistance pull-up and pull-down drive allow the MCP14700 to quickly transition a 3300 pF load in typically 10 ns. Bootstrapping for the high-side drive is internally implemented, which allows for a reduced system cost and design complexity.
The MCP14700 features undervoltage lockout (UVLO) with a typical hysteresis of 500 mV. Overtemperature protection with hysteresis is also featured on the device.
Features
Ideally suited to drive low Figure-of-Merit (FOM) MOSFETs such as Microchip's MCP87000 MOSFET family
Independent PWM Input Control for High-Side and Low-Side Gate Drive
Input Logic Level Threshold 3.0V TTL Compatible
Dual Output MOSFET Drive for Synchronous Applications
High Peak Output Current: 2A (typical)
Internal Bootstrap Blocking Device
36V BOOT Pin Maximum Rating
Low Supply Current 45 μA (typical)
High Capacitive Load Drive Capability:
-3300 pF in 10.0 ns (typical)
Input Voltage Undervoltage Lockout Protection
Overtemperature Protection
Space Saving Packages:
8-Lead SOIC
8-Lead 3x3 DFN
Applications
3-Phase BLDC Motor Control
High Efficient Synchronous DC/DC Buck Converters
High-Current Low Output Voltage Synchronous DC/DC Buck Converters
High Input Voltage Synchronous DC/DC Buck Converters
Core Voltage Supplies for Microprocessors
Microchip Technology MCP14700-E/SN technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology MCP14700-E/SN.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature-40°C~125°C TJ
- PackagingTube
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryMOSFET Drivers
- Voltage - Supply4.5V~5.5V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage5V
- Reflow Temperature-Max (s)40
- Base Part NumberMCP14700
- Pin Count8
- Number of Outputs2
- Output Voltage25mV
- Max Output Current3.5A
- Operating Supply Voltage5V
- Power Supplies5V
- Nominal Supply Current80μA
- Output Current2A
- Propagation Delay36 ns
- Input TypeNon-Inverting
- Turn On Delay Time36 ns
- Rise Time10ns
- Fall Time (Typ)10 ns
- Turn-Off Delay Time36 ns
- Rise / Fall Time (Typ)10ns 10ns
- Interface IC TypeBUFFER OR INVERTER BASED MOSFET DRIVER
- Channel TypeIndependent
- Turn On Time0.036 μs
- Output Peak Current Limit-Nom2A
- Driven ConfigurationHalf-Bridge
- Gate TypeN-Channel MOSFET
- Current - Peak Output (Source, Sink)2A 2A
- High Side DriverYES
- Turn Off Time0.036 μs
- High Side Voltage - Max (Bootstrap)36V
- Height1.25mm
- Length4.9mm
- Width3.9mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
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