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MBR20H35CT-E3/45

Vishay Semiconductor Diodes Division MBR20H35CT-E3/45

Part Number:
MBR20H35CT-E3/45
Manufacturer:
Vishay Semiconductor Diodes Division
Ventron No:
3062891-MBR20H35CT-E3/45
Description:
DIODE ARRAY SCHOTTKY 35V TO220AB
ECAD Model:
Datasheet:
MBR(F,B)20xxCT

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Specifications
Vishay Semiconductor Diodes Division MBR20H35CT-E3/45 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division MBR20H35CT-E3/45.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Diode Element Material
    SILICON
  • Packaging
    Tube
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    FREE WHEELING DIODE, LOW POWER LOSS
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Terminal Position
    SINGLE
  • Pin Count
    3
  • Number of Elements
    2
  • Element Configuration
    Common Cathode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    100μA @ 35V
  • Voltage - Forward (Vf) (Max) @ If
    630mV @ 10A
  • Forward Current
    20A
  • Max Reverse Leakage Current
    100μA
  • Operating Temperature - Junction
    -65°C~175°C
  • Max Surge Current
    150A
  • Application
    EFFICIENCY
  • Max Reverse Voltage (DC)
    35V
  • Average Rectified Current
    10A
  • Number of Phases
    1
  • Peak Reverse Current
    100μA
  • Max Repetitive Reverse Voltage (Vrrm)
    35V
  • JEDEC-95 Code
    TO-220AB
  • Peak Non-Repetitive Surge Current
    150A
  • Diode Configuration
    1 Pair Common Cathode
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
MBR20H35CT-E3/45 Overview
As a general rule, surge currents should be monitored and kept below 150A.In operation, this device will be set to 20A volts forward.This device is powered with reverse voltage peak of 100μA V.When it's reverse biased, it's maximal reverse leakage current is 100μA.

MBR20H35CT-E3/45 Features
a peak voltage of 100μA
a reverse voltage peak of 100μA


MBR20H35CT-E3/45 Applications
There are a lot of Vishay Semiconductor Diodes Division
MBR20H35CT-E3/45 applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
Product Comparison
The three parts on the right have similar specifications to MBR20H35CT-E3/45.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Diode Element Material
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    HTS Code
    Subcategory
    Terminal Position
    Pin Count
    Number of Elements
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Forward Current
    Max Reverse Leakage Current
    Operating Temperature - Junction
    Max Surge Current
    Application
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    JEDEC-95 Code
    Peak Non-Repetitive Surge Current
    Diode Configuration
    Radiation Hardening
    RoHS Status
    Factory Lead Time
    Weight
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Forward Voltage
    Max Forward Surge Current (Ifsm)
    Height
    Length
    Width
    Base Part Number
    Voltage - Forward (Vf) (Max) @ If:
    Voltage - DC Reverse (Vr) (Max):
    Supplier Device Package:
    Speed:
    Series:
    Packaging:
    Package / Case:
    Operating Temperature - Junction:
    Mounting Type:
    Diode Type:
    Diode Configuration:
    Current - Reverse Leakage @ Vr:
    Current - Average Rectified (Io) (per Diode):
    View Compare
  • MBR20H35CT-E3/45
    MBR20H35CT-E3/45
    Vishay Semiconductor Diodes Division
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    Tube
    2011
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    175°C
    -65°C
    FREE WHEELING DIODE, LOW POWER LOSS
    8541.10.00.80
    Rectifier Diodes
    SINGLE
    3
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    100μA @ 35V
    630mV @ 10A
    20A
    100μA
    -65°C~175°C
    150A
    EFFICIENCY
    35V
    10A
    1
    100μA
    35V
    TO-220AB
    150A
    1 Pair Common Cathode
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR2040CT
    MBR2040CT
    Diodes Incorporated
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    Tube
    2005
    e3
    no
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    150°C
    -65°C
    LOW POWER LOSS, FREE WHEELING DIODE
    8541.10.00.80
    Rectifier Diodes
    SINGLE
    3
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    100μA @ 40V
    840mV @ 20A
    20A
    -
    -55°C~150°C
    -
    EFFICIENCY
    40V
    20A
    1
    100μA
    40V
    TO-220AB
    150A
    1 Pair Common Cathode
    No
    ROHS3 Compliant
    17 Weeks
    6.000006g
    260
    40
    840mV
    150A
    8.89mm
    10.4mm
    4.82mm
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MBR20H35CT-E3/45 vs MBR2040CT
  • MBR2030CT
    MBR2030CT
    Diodes Incorporated
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    Tube
    2005
    e3
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    150°C
    -65°C
    LOW POWER LOSS, FREE WHEELING DIODE
    8541.10.00.80
    Rectifier Diodes
    SINGLE
    3
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    100μA @ 30V
    840mV @ 20A
    20A
    -
    -55°C~150°C
    -
    EFFICIENCY
    30V
    20A
    1
    100μA
    30V
    TO-220AB
    150A
    1 Pair Common Cathode
    No
    ROHS3 Compliant
    -
    6.000006g
    260
    40
    840mV
    150A
    8.89mm
    10.4mm
    4.82mm
    MBR2030CT
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MBR20H35CT-E3/45 vs MBR2030CT
  • MBR2035CT
    MBR2035CT
    Diodes Incorporated
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    840mV @ 20A
    35V
    TO-220AB
    Fast Recovery = 200mA (Io)
    -
    Tube
    TO-220-3
    -55°C ~ 150°C
    Through Hole
    Schottky
    1 Pair Common Cathode
    100µA @ 35V
    20A
    MBR20H35CT-E3/45 vs MBR2035CT
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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