ON Semiconductor MBR1H100SFT3G
- Part Number:
- MBR1H100SFT3G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2419768-MBR1H100SFT3G
- Description:
- DIODE SCHOTTKY 100V 1A SOD123FL
- Datasheet:
- MBR1H100SFT3G
ON Semiconductor MBR1H100SFT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBR1H100SFT3G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time6 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseSOD-123F
- Surface MountYES
- Number of Pins2
- Diode Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Max Operating Temperature175°C
- Min Operating Temperature-65°C
- Additional FeatureFREE WHEELING DIODE
- HTS Code8541.10.00.80
- SubcategoryRectifier Diodes
- Terminal PositionDUAL
- Terminal FormFLAT
- Base Part NumberMBR1H100
- Pin Count2
- Number of Elements1
- Element ConfigurationSingle
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr40μA @ 100V
- Voltage - Forward (Vf) (Max) @ If760mV @ 1A
- Forward Current1A
- Operating Temperature - Junction-65°C~175°C
- Output Current-Max1A
- Halogen FreeHalogen Free
- Forward Voltage840mV
- Max Reverse Voltage (DC)100V
- Average Rectified Current1A
- Peak Reverse Current40μA
- Max Repetitive Reverse Voltage (Vrrm)100V
- Peak Non-Repetitive Surge Current50A
- Max Forward Surge Current (Ifsm)50A
- Height900μm
- Length2.9mm
- Width1.8mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MBR1H100SFT3G Overview
Devices with this rating have an average rectified current of 1A volts.1A is the maximum value of forward current.There is no maximum output current when the value is 1A.Using the data chart, the peak reverse is 40μA in the datasheets.
MBR1H100SFT3G Features
an average rectified current of 1A volts
1A is the maximum value
the peak reverse is 40μA
MBR1H100SFT3G Applications
There are a lot of ON Semiconductor
MBR1H100SFT3G applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
Devices with this rating have an average rectified current of 1A volts.1A is the maximum value of forward current.There is no maximum output current when the value is 1A.Using the data chart, the peak reverse is 40μA in the datasheets.
MBR1H100SFT3G Features
an average rectified current of 1A volts
1A is the maximum value
the peak reverse is 40μA
MBR1H100SFT3G Applications
There are a lot of ON Semiconductor
MBR1H100SFT3G applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
MBR1H100SFT3G More Descriptions
ON Semi MBR1H100SFT3G; SMT Schottky Switching Diode; 100V 1A; 2-Pin SOD-123FL
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 100V V(RRM), Silicon
SCHOTTKY RECT, 1A, 100V, SOD123; Repetitive Reverse Voltage Vrrm Max: 100V; Forward Current If(AV): 1A; Diode Configuration: Single; Diode Case Style: SOD-123FL; No. of Pins: 2Pins; Forward Voltage VF Max: 840V; Forward Surge Current Ifsm Max: 50A; Operating Temperature Max: 175°C; Product Range: MBR1H Series; Automotive Qualification Standard: AEC-Q101; SVHC: Lead (27-Jun-2018); Semiconductor Technology: Si
This device uses the Schottky Barrier principle with a large area Metal-to-silicon power diode. Ideally suited for low voltage high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Because of its small size it is ideal for use in portable and battery powered products such as cellular and cordless phones chargers notebook computers printers PDAs and PCMCIA cards. Typical applications are AC-DC and DC-DC converters reverse battery protection and Oring of multiple supply voltages and any other application where performance and size are critical.
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 100V V(RRM), Silicon
SCHOTTKY RECT, 1A, 100V, SOD123; Repetitive Reverse Voltage Vrrm Max: 100V; Forward Current If(AV): 1A; Diode Configuration: Single; Diode Case Style: SOD-123FL; No. of Pins: 2Pins; Forward Voltage VF Max: 840V; Forward Surge Current Ifsm Max: 50A; Operating Temperature Max: 175°C; Product Range: MBR1H Series; Automotive Qualification Standard: AEC-Q101; SVHC: Lead (27-Jun-2018); Semiconductor Technology: Si
This device uses the Schottky Barrier principle with a large area Metal-to-silicon power diode. Ideally suited for low voltage high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Because of its small size it is ideal for use in portable and battery powered products such as cellular and cordless phones chargers notebook computers printers PDAs and PCMCIA cards. Typical applications are AC-DC and DC-DC converters reverse battery protection and Oring of multiple supply voltages and any other application where performance and size are critical.
The three parts on the right have similar specifications to MBR1H100SFT3G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsDiode Element MaterialPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryTerminal PositionTerminal FormBase Part NumberPin CountNumber of ElementsElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentOperating Temperature - JunctionOutput Current-MaxHalogen FreeForward VoltageMax Reverse Voltage (DC)Average Rectified CurrentPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Peak Non-Repetitive Surge CurrentMax Forward Surge Current (Ifsm)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io):Capacitance @ Vr, F:MountPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusCase ConnectionApplicationNumber of PhasesSupplier Device PackageVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)View Compare
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MBR1H100SFT3GACTIVE (Last Updated: 4 days ago)6 WeeksTinSurface MountSOD-123FYES2SILICONTape & Reel (TR)2006e3yesActive1 (Unlimited)2EAR99175°C-65°CFREE WHEELING DIODE8541.10.00.80Rectifier DiodesDUALFLATMBR1H10021SingleFast Recovery =< 500ns, > 200mA (Io)Schottky40μA @ 100V760mV @ 1A1A-65°C~175°C1AHalogen Free840mV100V1A40μA100V50A50A900μm2.9mm1.8mmNo SVHCNoROHS3 CompliantLead Free-------------------------
-
-------------------------------------------------840mV @ 20A45VTO-220-2Fast Recovery = 200mA (Io)SWITCHMODE™TubeTO-220-2-65°C ~ 175°CThrough HoleSchottky100µA @ 45V10A------------
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-10 Weeks-Through HoleTO-220-2-2SILICONTube2015--Active1 (Unlimited)2EAR99150°C-65°CFREE WHEELING DIODE, LOW POWER LOSS8541.10.00.80Rectifier Diodes---31SingleFast Recovery =< 500ns, > 200mA (Io)Schottky100μA @ 90V800mV @ 10A10A-65°C~150°C---90V10A100μA90V150A------ROHS3 Compliant--------------Through HoleNOT SPECIFIEDunknownNOT SPECIFIEDNot QualifiedCATHODEEFFICIENCY1---
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---Through HoleTO-220-2---Tube---Obsolete1 (Unlimited)-------------Fast Recovery =< 500ns, > 200mA (Io)Schottky4.5μA @ 100V770mV @ 10A--65°C~175°C--------------ROHS3 Compliant----------------------TO-220AC100V10A
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