Fujitsu Electronics America, Inc. MB85R256GPF-G-BND-ERE1

MB85R256GPF-G-BND-ERE1 Overview
As far as its memory type goes, it falls into the Non-Volatile category. You can get memory ics in a Tape & Reel (TR) case. There is 256Kb 32K x 8 of memory on the chip. The device uses a mainstream FRAM-format memory. Suitable for use in a wide range of demanding applications, this device offers an extended operating temperature range of -40°C~85°C TA. There is a voltage range of 2.7V~3.6V for the supply voltage.

MB85R256GPF-G-BND-ERE1 Features
This product is packaged in Tape & Reel (TR) form and is currently listed as Obsolete. It has a Moisture Sensitivity Level (MSL) of 3, meaning it can withstand exposure to 168 hours of moisture. The technology used in this product is FRAM (Ferroelectric RAM). It requires a voltage supply of 2.7V to 3.6V. The memory size is 256Kb, organized as 32K x 8. It is a non-volatile memory, meaning it retains data even when power is turned off. The memory format is FRAM and it has a parallel memory interface. The write cycle time for both a word and a page is 150ns.

MB85R256GPF-G-BND-ERE1 Applications
There are a lot of Fujitsu Electronics America, Inc.
MB85R256GPF-G-BND-ERE1 Memory applications.


multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory