Fairchild/ON Semiconductor KSC5603D
- Part Number:
- KSC5603D
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 4538805-KSC5603D
- Description:
- TRANS NPN 800V 3A TO-220
- Datasheet:
- TO220B03 Pkg Drawing
Fairchild/ON Semiconductor KSC5603D technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSC5603D.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.95
- SubcategoryOther Transistors
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power - Max100W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 400mA 3V
- Current - Collector Cutoff (Max)100μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic2.5V @ 200μA, 1A
- Voltage - Collector Emitter Breakdown (Max)800V
- Current - Collector (Ic) (Max)3A
- Transition Frequency11MHz
- Frequency - Transition5MHz
- Power Dissipation-Max (Abs)3W
KSC5603D Overview
DC current gain in this device equals 20 @ 400mA 3V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 200μA, 1A.As a result, the part has a transition frequency of 11MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
KSC5603D Features
the DC current gain for this device is 20 @ 400mA 3V
the vce saturation(Max) is 2.5V @ 200μA, 1A
a transition frequency of 11MHz
KSC5603D Applications
There are a lot of ON Semiconductor
KSC5603D applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 20 @ 400mA 3V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 200μA, 1A.As a result, the part has a transition frequency of 11MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
KSC5603D Features
the DC current gain for this device is 20 @ 400mA 3V
the vce saturation(Max) is 2.5V @ 200μA, 1A
a transition frequency of 11MHz
KSC5603D Applications
There are a lot of ON Semiconductor
KSC5603D applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSC5603D More Descriptions
TRANS NPN 800V 3A TO-220
The three parts on the right have similar specifications to KSC5603D.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)Lifecycle StatusFactory Lead TimeMountNumber of PinsWeightPublishedVoltage - Rated DCMax Power DissipationCurrent RatingElement ConfigurationPower DissipationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusLead FreePin CountTerminal FormFrequencyBase Part NumberGain Bandwidth ProductCollector Emitter Saturation VoltageMax Breakdown VoltageHeightLengthWidthREACH SVHCView Compare
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KSC5603DThrough HoleTO-220-3NOSILICON150°C TJBulke3yesObsolete1 (Unlimited)3EAR99Tin (Sn)8541.29.00.95Other TransistorsSINGLENOT SPECIFIEDcompliantNOT SPECIFIEDR-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE100WSWITCHINGNPNNPN20 @ 400mA 3V100μATO-220AB2.5V @ 200μA, 1A800V3A11MHz5MHz3W--------------------------------
-
Through HoleTO-220-3-SILICON150°C TJTubee3yesObsolete1 (Unlimited)3EAR99Tin (Sn)-Other Transistors------1--SWITCHINGNPNNPN8 @ 2A 1V10μA ICBO-500mV @ 400mA, 2A-----LAST SHIPMENTS (Last Updated: 1 week ago)6 WeeksThrough Hole32.27g2010400V75W5ASingle75W400V5A400V800V12V22NoROHS3 CompliantLead Free-----------
-
Through HoleTO-220-3NOSILICON150°C TJTubee3yesObsolete1 (Unlimited)3-TIN--SINGLENOT SPECIFIEDunknownNOT SPECIFIEDR-PSFM-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE75WSWITCHINGNPNNPN4 @ 2A 1V100μATO-220AB1.5V @ 400mA, 2A600V4A11MHz11MHz-------------------ROHS3 Compliant-3----------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)2EAR99Tin (Sn)-Other Transistors----R-PSSO-G2-1--SWITCHINGNPNNPN4 @ 1A 1V100μA-1.5V @ 200mA, 1A--11MHz--ACTIVE (Last Updated: 3 days ago)6 WeeksSurface Mount3260.37mg2014600V50W2ASingle50W600V2A600V1.2kV12V12NoROHS3 CompliantLead Free-GULL WING11MHzKSC550211MHz310mV600V2.39mm6.73mm6.22mmNo SVHC
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