KSB564ACGTA

Fairchild/ON Semiconductor KSB564ACGTA

Part Number:
KSB564ACGTA
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3069333-KSB564ACGTA
Description:
TRANS PNP 25V 1A TO-92
ECAD Model:
Datasheet:
KSB564A

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Comments
Specifications
Fairchild/ON Semiconductor KSB564ACGTA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSB564ACGTA.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Box (TB)
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    NOT APPLICABLE
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT APPLICABLE
  • JESD-30 Code
    O-PBCY-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    800mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 100mA 1V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 100mA, 1A
  • Voltage - Collector Emitter Breakdown (Max)
    25V
  • Current - Collector (Ic) (Max)
    1A
  • Transition Frequency
    110MHz
  • Frequency - Transition
    110MHz
  • RoHS Status
    ROHS3 Compliant
Description
KSB564ACGTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 1V.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 110MHz.The device has a 25V maximal voltage - Collector Emitter Breakdown.

KSB564ACGTA Features
the DC current gain for this device is 200 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 110MHz


KSB564ACGTA Applications
There are a lot of Rochester Electronics, LLC
KSB564ACGTA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
KSB564ACGTA More Descriptions
Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 200 @ 100mA 1V 1A 800mW 110MHz
Trans GP BJT PNP 25V 1A 3-Pin TO-92 Ammo
Compliant Through Hole 178.2 mg 70 PNP 110 MHz Lead Free TO-92-3
Product Comparison
The three parts on the right have similar specifications to KSB564ACGTA.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    RoHS Status
    Supplier Device Package
    Base Part Number
    JEDEC-95 Code
    View Compare
  • KSB564ACGTA
    KSB564ACGTA
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    NO
    SILICON
    150°C TJ
    Tape & Box (TB)
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    MATTE TIN
    BOTTOM
    NOT APPLICABLE
    unknown
    NOT APPLICABLE
    O-PBCY-T3
    COMMERCIAL
    1
    SINGLE
    800mW
    AMPLIFIER
    PNP
    PNP
    200 @ 100mA 1V
    100nA ICBO
    500mV @ 100mA, 1A
    25V
    1A
    110MHz
    110MHz
    ROHS3 Compliant
    -
    -
    -
    -
  • KSB564ACYTA
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    NO
    SILICON
    150°C TJ
    Tape & Box (TB)
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    MATTE TIN
    BOTTOM
    NOT APPLICABLE
    unknown
    NOT APPLICABLE
    O-PBCY-T3
    COMMERCIAL
    1
    SINGLE
    800mW
    AMPLIFIER
    PNP
    PNP
    120 @ 100mA 1V
    100nA ICBO
    500mV @ 100mA, 1A
    25V
    1A
    110MHz
    110MHz
    ROHS3 Compliant
    -
    -
    -
  • KSB564AGTA
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    -
    150°C TJ
    Tape & Box (TB)
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    800mW
    -
    -
    PNP
    200 @ 100mA 1V
    100nA ICBO
    500mV @ 100mA, 1A
    25V
    1A
    -
    110MHz
    -
    TO-92-3
    KSB564
    -
  • KSB546O
    Through Hole
    TO-220-3
    NO
    SILICON
    150°C TJ
    Bulk
    -
    -
    Obsolete
    1 (Unlimited)
    3
    -
    SINGLE
    -
    compliant
    -
    R-PSFM-T3
    -
    1
    SINGLE
    25W
    AMPLIFIER
    PNP
    PNP
    70 @ 400mA 10V
    50μA ICBO
    1V @ 50mA, 500mA
    150V
    2A
    5MHz
    5MHz
    -
    -
    -
    TO-220AB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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