Fairchild/ON Semiconductor KSB564ACGTA
- Part Number:
- KSB564ACGTA
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3069333-KSB564ACGTA
- Description:
- TRANS PNP 25V 1A TO-92
- Datasheet:
- KSB564A
Fairchild/ON Semiconductor KSB564ACGTA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSB564ACGTA.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max800mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
- Voltage - Collector Emitter Breakdown (Max)25V
- Current - Collector (Ic) (Max)1A
- Transition Frequency110MHz
- Frequency - Transition110MHz
- RoHS StatusROHS3 Compliant
KSB564ACGTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 1V.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 110MHz.The device has a 25V maximal voltage - Collector Emitter Breakdown.
KSB564ACGTA Features
the DC current gain for this device is 200 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 110MHz
KSB564ACGTA Applications
There are a lot of Rochester Electronics, LLC
KSB564ACGTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 1V.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 110MHz.The device has a 25V maximal voltage - Collector Emitter Breakdown.
KSB564ACGTA Features
the DC current gain for this device is 200 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 110MHz
KSB564ACGTA Applications
There are a lot of Rochester Electronics, LLC
KSB564ACGTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSB564ACGTA More Descriptions
Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 200 @ 100mA 1V 1A 800mW 110MHz
Trans GP BJT PNP 25V 1A 3-Pin TO-92 Ammo
Compliant Through Hole 178.2 mg 70 PNP 110 MHz Lead Free TO-92-3
Trans GP BJT PNP 25V 1A 3-Pin TO-92 Ammo
Compliant Through Hole 178.2 mg 70 PNP 110 MHz Lead Free TO-92-3
The three parts on the right have similar specifications to KSB564ACGTA.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusSupplier Device PackageBase Part NumberJEDEC-95 CodeView Compare
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KSB564ACGTAThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON150°C TJTape & Box (TB)e3yesObsolete1 (Unlimited)3MATTE TINBOTTOMNOT APPLICABLEunknownNOT APPLICABLEO-PBCY-T3COMMERCIAL1SINGLE800mWAMPLIFIERPNPPNP200 @ 100mA 1V100nA ICBO500mV @ 100mA, 1A25V1A110MHz110MHzROHS3 Compliant----
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON150°C TJTape & Box (TB)e3yesObsolete1 (Unlimited)3MATTE TINBOTTOMNOT APPLICABLEunknownNOT APPLICABLEO-PBCY-T3COMMERCIAL1SINGLE800mWAMPLIFIERPNPPNP120 @ 100mA 1V100nA ICBO500mV @ 100mA, 1A25V1A110MHz110MHzROHS3 Compliant---
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--150°C TJTape & Box (TB)--Obsolete1 (Unlimited)----------800mW--PNP200 @ 100mA 1V100nA ICBO500mV @ 100mA, 1A25V1A-110MHz-TO-92-3KSB564-
-
Through HoleTO-220-3NOSILICON150°C TJBulk--Obsolete1 (Unlimited)3-SINGLE-compliant-R-PSFM-T3-1SINGLE25WAMPLIFIERPNPPNP70 @ 400mA 10V50μA ICBO1V @ 50mA, 500mA150V2A5MHz5MHz---TO-220AB
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