KSA1220AYS

Fairchild/ON Semiconductor KSA1220AYS

Part Number:
KSA1220AYS
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2465504-KSA1220AYS
Description:
TRANS PNP 160V 1.2A TO-126
ECAD Model:
Datasheet:
KSA1220AYS

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Specifications
Fairchild/ON Semiconductor KSA1220AYS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1220AYS.
  • Lifecycle Status
    ACTIVE (Last Updated: 23 hours ago)
  • Factory Lead Time
    19 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Number of Pins
    3
  • Weight
    761mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Bulk
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -160V
  • Max Power Dissipation
    20W
  • Current Rating
    -1.2A
  • Frequency
    175MHz
  • Base Part Number
    KSA1220
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.2W
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    175MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    -160V
  • Max Collector Current
    -1.2A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    160 @ 300mA 5V
  • Current - Collector Cutoff (Max)
    1μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    700mV @ 200mA, 1A
  • Collector Emitter Breakdown Voltage
    45V
  • Current - Collector (Ic) (Max)
    1.2A
  • Transition Frequency
    175MHz
  • Collector Emitter Saturation Voltage
    -400mV
  • Max Breakdown Voltage
    160V
  • Collector Base Voltage (VCBO)
    -160V
  • Emitter Base Voltage (VEBO)
    -5V
  • hFE Min
    160
  • Max Junction Temperature (Tj)
    150°C
  • Height
    14.2mm
  • Length
    8mm
  • Width
    3.25mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
KSA1220AYS Description KSA1220AYS is anPNP Epitaxial Silicon Transistor. The KSA1220AYS transistor can have a current gain of 60 to 320. The KSA1220AYS is a complementary NPN transistor for the KSC2690. You can replace the KSA1220AYS with the 2SA1021, 2SA1220, 2SA1220A, 2SB649, or KSA1220A. KSA1220AYS is ideal for audio frequency power amplifier and high-frequency power amplifier applications. 
KSA1220AYS Features Type Designator: KSA1220
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 175 MHz
Collector Capacitance (Cc): 26 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO126
KSA1220AYS Applications High voltage application
Monitor equipment application
TV and monitor class B video circuitry
Switching circuits
And many other general-purpose and high voltage applications 
KSA1220AYS More Descriptions
KSA1220 Series 160 V 1.2 A PNP Epitaxial Silicon Transistor - TO-126
Bipolar Transistors - BJT PNP Epitaxial Sil
Trans GP BJT PNP 120V 1.2A 1200mW 3-Pin(3 Tab) TO-126 Bag
Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
TRANSISTOR, BIPOL, PNP, -160V, TO-225AA; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -160V; Transition Frequency ft: 175MHz; Power Dissipation Pd: 20W; DC Collector Current: -1.2A; DC Current Gain hFE: 160hFE; Transistor Case Style: TO-225AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to KSA1220AYS.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Frequency
    Base Part Number
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Current - Collector (Ic) (Max)
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Frequency - Transition
    Terminal Position
    View Compare
  • KSA1220AYS
    KSA1220AYS
    ACTIVE (Last Updated: 23 hours ago)
    19 Weeks
    Through Hole
    Through Hole
    TO-225AA, TO-126-3
    3
    761mg
    SILICON
    150°C TJ
    Bulk
    2001
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    -160V
    20W
    -1.2A
    175MHz
    KSA1220
    1
    Single
    1.2W
    AMPLIFIER
    175MHz
    PNP
    PNP
    -160V
    -1.2A
    160 @ 300mA 5V
    1μA ICBO
    700mV @ 200mA, 1A
    45V
    1.2A
    175MHz
    -400mV
    160V
    -160V
    -5V
    160
    150°C
    14.2mm
    8mm
    3.25mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • KSA1174PBU
    -
    -
    -
    Through Hole
    TO-226-3, TO-92-3 Short Body
    -
    -
    -
    150°C TJ
    Bulk
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    KSA1174
    -
    -
    -
    -
    -
    -
    PNP
    -
    -
    200 @ 1mA 6V
    1μA
    300mV @ 1mA, 10mA
    -
    50mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    300mW
    120V
    100MHz
    -
  • KSA1013YTA
    ACTIVE (Last Updated: 17 hours ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 Long Body (Formed Leads)
    3
    371.1027mg
    SILICON
    150°C TJ
    Tape & Box (TB)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    -160V
    900mW
    -1A
    50MHz
    KSA1013
    1
    Single
    900mW
    AMPLIFIER
    50MHz
    PNP
    PNP
    160V
    1A
    160 @ 200mA 5V
    1μA ICBO
    1.5V @ 50mA, 500mA
    160V
    -
    50MHz
    -1.5V
    160V
    -160V
    -6V
    60
    -
    8.2mm
    5.1mm
    4.1mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    BOTTOM
  • KSA1174FBU
    -
    -
    -
    Through Hole
    TO-226-3, TO-92-3 Short Body
    -
    -
    -
    150°C TJ
    Bulk
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    KSA1174
    -
    -
    -
    -
    -
    -
    PNP
    -
    -
    300 @ 1mA 6V
    1μA
    300mV @ 1mA, 10mA
    -
    50mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    300mW
    120V
    100MHz
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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