Fairchild/ON Semiconductor KSA1220AYS
- Part Number:
- KSA1220AYS
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2465504-KSA1220AYS
- Description:
- TRANS PNP 160V 1.2A TO-126
- Datasheet:
- KSA1220AYS
Fairchild/ON Semiconductor KSA1220AYS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1220AYS.
- Lifecycle StatusACTIVE (Last Updated: 23 hours ago)
- Factory Lead Time19 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Number of Pins3
- Weight761mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-160V
- Max Power Dissipation20W
- Current Rating-1.2A
- Frequency175MHz
- Base Part NumberKSA1220
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.2W
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product175MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)-160V
- Max Collector Current-1.2A
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 300mA 5V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 200mA, 1A
- Collector Emitter Breakdown Voltage45V
- Current - Collector (Ic) (Max)1.2A
- Transition Frequency175MHz
- Collector Emitter Saturation Voltage-400mV
- Max Breakdown Voltage160V
- Collector Base Voltage (VCBO)-160V
- Emitter Base Voltage (VEBO)-5V
- hFE Min160
- Max Junction Temperature (Tj)150°C
- Height14.2mm
- Length8mm
- Width3.25mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSA1220AYS Description
KSA1220AYS is anPNP Epitaxial Silicon Transistor. The KSA1220AYS transistor can have a current gain of 60 to 320. The KSA1220AYS is a complementary NPN transistor for the KSC2690. You can replace the KSA1220AYS with the 2SA1021, 2SA1220, 2SA1220A, 2SB649, or KSA1220A. KSA1220AYS is ideal for audio frequency power amplifier and high-frequency power amplifier applications.
KSA1220AYS Features Type Designator: KSA1220
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 175 MHz
Collector Capacitance (Cc): 26 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO126
KSA1220AYS Applications High voltage application
Monitor equipment application
TV and monitor class B video circuitry
Switching circuits
And many other general-purpose and high voltage applications
KSA1220AYS Features Type Designator: KSA1220
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 175 MHz
Collector Capacitance (Cc): 26 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO126
KSA1220AYS Applications High voltage application
Monitor equipment application
TV and monitor class B video circuitry
Switching circuits
And many other general-purpose and high voltage applications
KSA1220AYS More Descriptions
KSA1220 Series 160 V 1.2 A PNP Epitaxial Silicon Transistor - TO-126
Bipolar Transistors - BJT PNP Epitaxial Sil
Trans GP BJT PNP 120V 1.2A 1200mW 3-Pin(3 Tab) TO-126 Bag
Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
TRANSISTOR, BIPOL, PNP, -160V, TO-225AA; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -160V; Transition Frequency ft: 175MHz; Power Dissipation Pd: 20W; DC Collector Current: -1.2A; DC Current Gain hFE: 160hFE; Transistor Case Style: TO-225AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)
Bipolar Transistors - BJT PNP Epitaxial Sil
Trans GP BJT PNP 120V 1.2A 1200mW 3-Pin(3 Tab) TO-126 Bag
Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
TRANSISTOR, BIPOL, PNP, -160V, TO-225AA; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -160V; Transition Frequency ft: 175MHz; Power Dissipation Pd: 20W; DC Collector Current: -1.2A; DC Current Gain hFE: 160hFE; Transistor Case Style: TO-225AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)
The three parts on the right have similar specifications to KSA1220AYS.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePower - MaxVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionTerminal PositionView Compare
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KSA1220AYSACTIVE (Last Updated: 23 hours ago)19 WeeksThrough HoleThrough HoleTO-225AA, TO-126-33761mgSILICON150°C TJBulk2001e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-160V20W-1.2A175MHzKSA12201Single1.2WAMPLIFIER175MHzPNPPNP-160V-1.2A160 @ 300mA 5V1μA ICBO700mV @ 200mA, 1A45V1.2A175MHz-400mV160V-160V-5V160150°C14.2mm8mm3.25mmNo SVHCNoROHS3 CompliantLead Free-----
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---Through HoleTO-226-3, TO-92-3 Short Body---150°C TJBulk---Obsolete1 (Unlimited)--------KSA1174------PNP--200 @ 1mA 6V1μA300mV @ 1mA, 10mA-50mA--------------300mW120V100MHz-
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ACTIVE (Last Updated: 17 hours ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 Long Body (Formed Leads)3371.1027mgSILICON150°C TJTape & Box (TB)2013e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-160V900mW-1A50MHzKSA10131Single900mWAMPLIFIER50MHzPNPPNP160V1A160 @ 200mA 5V1μA ICBO1.5V @ 50mA, 500mA160V-50MHz-1.5V160V-160V-6V60-8.2mm5.1mm4.1mmNo SVHCNoROHS3 CompliantLead Free---BOTTOM
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---Through HoleTO-226-3, TO-92-3 Short Body---150°C TJBulk---Obsolete1 (Unlimited)--------KSA1174------PNP--300 @ 1mA 6V1μA300mV @ 1mA, 10mA-50mA--------------300mW120V100MHz-
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