Microsemi Corporation JANTX2N5152
- Part Number:
- JANTX2N5152
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466220-JANTX2N5152
- Description:
- TRANS NPN 80V 2A TO39
- ECAD Model:
-
- Datasheet:
- JANTX2N5152
Microsemi Corporation JANTX2N5152 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N5152.
- Lifecycle StatusIN PRODUCTION (Last Updated: 4 weeks ago)
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/544
- Published2007
- JESD-609 Codee0
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Reference StandardMIL
- Qualification StatusQualified
- Number of Elements1
- Power Dissipation1W
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 2.5A 5V
- Current - Collector Cutoff (Max)50μA
- JEDEC-95 CodeTO-5
- Vce Saturation (Max) @ Ib, Ic1.5V @ 500mA, 5A
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5.5V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTX2N5152 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 2.5A 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 500mA, 5A.The emitter base voltage can be kept at 5.5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
JANTX2N5152 Features
the DC current gain for this device is 30 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 5.5V
JANTX2N5152 Applications
There are a lot of Microsemi Corporation
JANTX2N5152 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 2.5A 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 500mA, 5A.The emitter base voltage can be kept at 5.5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
JANTX2N5152 Features
the DC current gain for this device is 30 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 5.5V
JANTX2N5152 Applications
There are a lot of Microsemi Corporation
JANTX2N5152 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N5152 More Descriptions
Trans GP BJT NPN 80V 2A 3-Pin TO-39
Power Bjt To-39 Rohs Compliant: Yes |Microchip JANTX2N5152
TRANS NPN 80V 2A TO39
Power BJT _ TO-39
Power Bjt To-39 Rohs Compliant: Yes |Microchip JANTX2N5152
TRANS NPN 80V 2A TO39
Power BJT _ TO-39
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