Microsemi Corporation JAN2N3501L
- Part Number:
- JAN2N3501L
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3813534-JAN2N3501L
- Description:
- TRANS NPN 150V 0.3A
- Datasheet:
- JAN2N3501L
Microsemi Corporation JAN2N3501L technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N3501L.
- Lifecycle StatusIN PRODUCTION (Last Updated: 4 weeks ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AA, TO-5-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/366
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.29.00.95
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max1W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)400mV
- Max Collector Current300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
- Collector Emitter Breakdown Voltage150V
- Collector Base Voltage (VCBO)150V
- Turn Off Time-Max (toff)1150ns
- Turn On Time-Max (ton)115ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JAN2N3501L Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 15mA, 150mA.Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.
JAN2N3501L Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
JAN2N3501L Applications
There are a lot of Microsemi Corporation
JAN2N3501L applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 15mA, 150mA.Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.
JAN2N3501L Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
JAN2N3501L Applications
There are a lot of Microsemi Corporation
JAN2N3501L applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JAN2N3501L More Descriptions
Non-Compliant Through Hole Bulk TO-5-3 3 Production (Last Updated: 1 month ago) No 300 mA
300 mA 150 V NPN Si SMALL SIGNAL TRANSISTOR
Trans GP BJT NPN 150V 300mA 3-Pin TO-5 Tray
300 mA 150 V NPN Si SMALL SIGNAL TRANSISTOR
Trans GP BJT NPN 150V 300mA 3-Pin TO-5 Tray
The three parts on the right have similar specifications to JAN2N3501L.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeMax Power DissipationTerminal PositionTerminal FormPin CountQualification StatusNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Turn Off Time-Max (toff)Turn On Time-Max (ton)Radiation HardeningRoHS StatusSurface MountSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Reference StandardJESD-30 CodeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyPower Dissipation-Max (Abs)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureView Compare
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JAN2N3501LIN PRODUCTION (Last Updated: 4 weeks ago)23 WeeksThrough HoleThrough HoleTO-205AA, TO-5-3 Metal Can3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/3662007e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.29.00.951WBOTTOMWIRE3Qualified1SINGLECOLLECTOR1WSWITCHINGNPNNPN400mV300mA100 @ 150mA 10V10μA ICBO400mV @ 15mA, 150mA150V150V1150ns115nsNoNon-RoHS Compliant--------------
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-22 Weeks-Through HoleTO-205AD, TO-39-3 Metal Can-SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/5812002e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.29.00.95-BOTTOMWIRE-Qualified1SINGLE-1W-NPNNPN--30 @ 250mA 1V100nA ICBO600mV @ 100mA, 1A-----Non-RoHS CompliantNOOther TransistorsNOT SPECIFIEDNOT SPECIFIEDMIL-19500/581O-MBCY-W340V1A1MHz0.8W---
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-23 WeeksThrough HoleThrough HoleTO-205AD, TO-39-3 Metal Can3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/3662007e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.29.00.951WBOTTOMWIRE2Qualified1SINGLECOLLECTOR1WSWITCHINGNPNNPN150V300mA40 @ 150mA 10V10μA ICBO400mV @ 15mA, 150mA-150V1150ns115nsNoNon-RoHS Compliant-Other Transistors------150MHz----
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-18 WeeksThrough HoleThrough HoleTO-206AA, TO-18-3 Metal Can3--65°C~200°C TJBulkMilitary, MIL-PRF-19500/2552007--Active1 (Unlimited)----500mW-------500mW--NPN50V800mA40 @ 150mA 10V50nA1V @ 50mA, 500mA-75V--NoNon-RoHS Compliant------50V800mA--TO-18 (TO-206AA)200°C-65°C
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